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Low-temperature intrinsic plasticity in silicon at small scales

Acta materialia, 2018-12, Vol.161, p.54-60

2018

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Influence of Oxygen Concentration and Distribution on Microstructure and Superconducting Characteristics of MgB2-Based Materials and Melt-Textured YBCO

IEEE transactions on applied superconductivity, 2022-06, Vol.32 (4), p.1-6

2022

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High-stress plasticity and the core structures of dislocations in silicon

Physica status solidi. A, Applications and materials science, 2007-07, Vol.204 (7), p.2248-2255

Rabier, J.

2007

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TEM observations of dislocations in plastically deformed diamond

Physica status solidi. A, Applications and materials science, 2013-01, Vol.210 (1), p.191-194

2013

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Proposition d’une nouvelle structure pour le guide des bonnes pratiques biomédicales version 2010

IRBM news, 2009, Vol.30 (1), p.3-6

2009

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Correlations between the structure and superconducting properties of MT-YBaCuO

Journal of physics. Conference series, 2020-06, Vol.1559 (1), p.12048

2020

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Plastic behaviour and deformation mechanisms in silicon nano-objects

Journal of physics. Conference series, 2019-05, Vol.1190 (1), p.12004

2019

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Silicon micropillars: high stress plasticity

Physica status solidi. C, 2013-01, Vol.10 (1), p.11-15

2013

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Steffensen's inequality and L^{1}-L^{∞} estimates of weighted integrals

Proceedings of the American Mathematical Society, 2012-02, Vol.140 (2), p.665

Patrick J. Rabier

2012

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Comment on “Bulk Dislocation Core Dissociation Probed by Coherent X Rays in Silicon”

Physical review letters, 2011-11, Vol.107 (19), p.199601; discussion 199602-199601; discussion 199602, Article 199601

2011

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Erratum to “$L^p$ measure of growth and higher order Hardy–Sobolev–Morrey inequalities on $\mathbb{R}^{N}$”

Journal of the Mathematical Society of Japan, 2018-04, Vol.70 (2)

RABIER, Patrick J.

2018

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Dislocation dipole annihilation in diamond and silicon

Journal of physics. Conference series, 2011-02, Vol.281 (1), p.012025-6

2011

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Experimental studies of mechanical properties of solid zirconium hydrides

Journal of nuclear materials, 2005-01, Vol.336 (1), p.73-80

2005

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Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: A diffuse X-ray scattering study

Journal of applied physics, 2011-09, Vol.110 (5), p.053508-053508-8

2011

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Dislocations in Silicon: New Results, New Challenges

Microscopy and microanalysis, 2006-08, Vol.12 (S02), p.902-903

Rabier, J

2006

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L^{p}$ measure of growth and higher order Hardy–Sobolev–Morrey inequalities on $\Bbb{R}^{N}

Journal of the Mathematical Society of Japan, 2017-01, Vol.69 (1)

RABIER, Patrick J.

2017

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Plasticity of indium antimonide between −176 °C and 400 °C under hydrostatic pressure. Part II: Microscopic aspects of the deformation

Acta materialia, 2010-02, Vol.58 (4), p.1426-1440

2010

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On the nucleation of shuffle dislocations in Si

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.944-948

2005

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Plastic deformation of Si at low temperature under high confining pressure

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2001-07, Vol.309, p.74-77

2001

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Pinning and trapped field in MgB 2 - and MT-YBaCuO bulk superconductors manufactured under pressure

Journal of physics. Conference series, 2016-03, Vol.695, p.12001

2016

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Plasticity of indium antimonide between −176 and 400 °C under hydrostatic pressure. Part I: Macroscopic aspects of the deformation

Acta materialia, 2010-02, Vol.58 (4), p.1418-1425

2010

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On a change in deformation mechanism in silicon at very high stress: new evidences

Scripta materialia, 2001-12, Vol.45 (11), p.1259-1265

2001

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Ehresmann Fibrations and Palais-Smale Conditions for Morphisms of Finsler Manifolds

Annals of mathematics, 1997-11, Vol.146 (3), p.647-691

Rabier, Patrick J.

1997

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TEM observations in Si: An attempt to link deformation microstructures and electrical activity

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4634-4636

2009

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Evidence of perfect dislocation glide in nanoindented 4H-SiC

Journal of physics. Conference series, 2013-11, Vol.471 (1), p.12013

2013

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Low-temperature intrinsic plasticity in silicon at small scales

Influence of Oxygen Concentration and Distribution on Microstructure and Superconducting Characteristics of MgB2-Based Materials and Melt-Textured YBCO

High-stress plasticity and the core structures of dislocations in silicon

TEM observations of dislocations in plastically deformed diamond

Proposition d’une nouvelle structure pour le guide des bonnes pratiques biomédicales version 2010

Correlations between the structure and superconducting properties of MT-YBaCuO

Plastic behaviour and deformation mechanisms in silicon nano-objects

Silicon micropillars: high stress plasticity

Steffensen's inequality and L^{1}-L^{∞} estimates of weighted integrals

Comment on “Bulk Dislocation Core Dissociation Probed by Coherent X Rays in Silicon”

Erratum to “$L^p$ measure of growth and higher order Hardy–Sobolev–Morrey inequalities on $\mathbb{R}^{N}$”

Dislocation dipole annihilation in diamond and silicon

Experimental studies of mechanical properties of solid zirconium hydrides

Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: A diffuse X-ray scattering study

Dislocations in Silicon: New Results, New Challenges

L^{p}$ measure of growth and higher order Hardy–Sobolev–Morrey inequalities on $\Bbb{R}^{N}

Plasticity of indium antimonide between −176 °C and 400 °C under hydrostatic pressure. Part II: Microscopic aspects of the deformation

On the nucleation of shuffle dislocations in Si

Plastic deformation of Si at low temperature under high confining pressure

Pinning and trapped field in MgB 2 - and MT-YBaCuO bulk superconductors manufactured under pressure

Plasticity of indium antimonide between −176 and 400 °C under hydrostatic pressure. Part I: Macroscopic aspects of the deformation

On a change in deformation mechanism in silicon at very high stress: new evidences

Ehresmann Fibrations and Palais-Smale Conditions for Morphisms of Finsler Manifolds

TEM observations in Si: An attempt to link deformation microstructures and electrical activity

Evidence of perfect dislocation glide in nanoindented 4H-SiC

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