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High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2×4) surface reconstruction

Sensors and actuators. A. Physical., 2024-08, Vol.374, p.115464, Article 115464

2024

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Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors

Sensors and actuators. A. Physical., 2020-11, Vol.315, p.112262, Article 112262

2020

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Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors

Sensors and actuators. A. Physical., 2022-02, Vol.334, p.113357, Article 113357

2022

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Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction

Solar energy materials and solar cells, 2023-06, Vol.254, p.112281, Article 112281

2023

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Response testing of Schottky-barrier GaAs detectors with alpha particles

Journal of physics. Conference series, 2022-09, Vol.2340 (1), p.12050

2022

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Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(0 0 1) surface

Journal of crystal growth, 2003-04, Vol.251 (1), p.101-105

2003

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Evidence of weak strain field in InAs/GaAs submonolayer quantum dots

Micro and nanostructures (2022), 2022-12, Vol.172, p.207449, Article 207449

2022

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A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry

Radiation physics and chemistry (Oxford, England : 1993), 2021-02, Vol.179, p.109103, Article 109103

2021

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Magnetic and power tuning of spin-asymmetric multiple excitons in a GaAs quantum well

Physica. E, Low-dimensional systems & nanostructures, 2021-05, Vol.129, p.114599, Article 114599

2021

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Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample

Journal of crystal growth, 2002-03, Vol.236 (1), p.41-45

2002

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Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

Journal of luminescence, 2013-12, Vol.144, p.98-104

2013

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p-Type doping of GaAs(0 0 1) layers grown by MBE using silicon as a dopant

Journal of crystal growth, 1999-10, Vol.206 (3), p.171-176

1999

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Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells

Physica. E, Low-dimensional systems & nanostructures, 2014-07, Vol.61, p.158-166

2014

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Magnetophotoluminescence study of GaAs/AlGaAs coupled double quantum wells with bimodal heterointerface roughness

Journal of luminescence, 2012-05, Vol.132 (5), p.1183-1187

2012

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Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder

Journal of luminescence, 2010-03, Vol.130 (3), p.460-465

2010

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Large InAs/GaAs quantum dots with an optical response in the long-wavelength region

Journal of crystal growth, 2005-05, Vol.278 (1), p.103-107

2005

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Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3 μm

Solid state communications, 2005-07, Vol.135 (4), p.232-236

2005

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Electric field controlled g-factor in parabolic well determined by transport measurements

Physica. E, Low-dimensional systems & nanostructures, 2006-08, Vol.34 (1), p.329-332

2006

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Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant

Thin solid films, 2005-03, Vol.474 (1-2), p.25-30

2005

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Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle

Journal of crystal growth, 2002-05, Vol.241 (1), p.19-30

2002

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Simulation of the dark current of quantum-well infrared photodetectors

Superlattices and microstructures, 2017-04, Vol.104, p.232-239

2017

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Spatial confinement of self-organized MBE-grown In Ga1−As quantum dots

Microelectronic engineering, 1998-08, Vol.43-44, p.19-23

1998

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Optical response at 1.3 μm and 1.5 μm with InAs quantum dots embedded in a pure GaAs matrix

Journal of crystal growth, 2003-04, Vol.251 (1), p.181-185

2003

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Quantum Hall ferromagnet in a two-dimensional electron gas coupled with quantum dots

Physica. E, Low-dimensional systems & nanostructures, 2006-08, Vol.34 (1), p.504-507

2006

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Interplay between direct gap renormalization and intervalley scattering in Al xGa 1− xAs near the Γ– X crossover

Solid state communications, 2002, Vol.121 (4), p.181-185

2002

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High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2×4) surface reconstruction

Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors

Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors

Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction

Response testing of Schottky-barrier GaAs detectors with alpha particles

Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(0 0 1) surface

Evidence of weak strain field in InAs/GaAs submonolayer quantum dots

A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry

Magnetic and power tuning of spin-asymmetric multiple excitons in a GaAs quantum well

Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample

Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

p-Type doping of GaAs(0 0 1) layers grown by MBE using silicon as a dopant

Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells

Magnetophotoluminescence study of GaAs/AlGaAs coupled double quantum wells with bimodal heterointerface roughness

Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder

Large InAs/GaAs quantum dots with an optical response in the long-wavelength region

Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3 μm

Electric field controlled g-factor in parabolic well determined by transport measurements

Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant

Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle

Simulation of the dark current of quantum-well infrared photodetectors

Spatial confinement of self-organized MBE-grown In Ga1−As quantum dots

Optical response at 1.3 μm and 1.5 μm with InAs quantum dots embedded in a pure GaAs matrix

Quantum Hall ferromagnet in a two-dimensional electron gas coupled with quantum dots

Interplay between direct gap renormalization and intervalley scattering in Al xGa 1− xAs near the Γ– X crossover

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