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High-detectivity infrared photodetector based on InAs submonolayer quantum dots grown on GaAs(001) with a 2 × 4 surface reconstruction

Journal of applied physics, 2019-12, Vol.126 (22)

2019

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Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors

Sensors and actuators. A. Physical., 2020-11, Vol.315, p.112262, Article 112262

2020

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Detection of Water Contaminants by Organic Transistors as Gas Sensors in a Bottom-Gate/Bottom-Contact Cross-Linked Structure

Sensors (Basel, Switzerland), 2023-09, Vol.23 (18), p.7981

2023

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Response testing of Schottky-barrier GaAs detectors with alpha particles

Journal of physics. Conference series, 2022-09, Vol.2340 (1), p.12050

2022

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Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing

Applied physics letters, 2012-12, Vol.101 (24)

2012

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Anisotropy of electron and hole g -factors in (In,Ga)As quantum dots

Applied physics letters, 2011-11, Vol.99 (22), p.221914-221914-3

2011

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Prognostic factors for critically ill patients with solid cancer tumours admitted to a medical intensive care unit

Annals of oncology, 2018-10, Vol.29, p.viii625-viii626

2018

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Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors

Sensors and actuators. A. Physical., 2022-02, Vol.334, p.113357, Article 113357

2022

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Modeling the 3D In profile of InxGa1−xAs/GaAs quantum dots

Journal of physics. D, Applied physics, 2016-04, Vol.49 (21)

2016

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Mid-infrared photodetection in an AlGaAs/GaAs quantum-well infrared photodetector using photoinduced noise

Journal of applied physics, 2015-11, Vol.118 (20)

2015

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Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

Journal of luminescence, 2013-12, Vol.144, p.98-104

2013

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Modeling noise in superlattice quantum-well infrared photodetectors

Journal of physics. D, Applied physics, 2014-09, Vol.47 (38), p.385105-6

2014

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A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry

Radiation physics and chemistry (Oxford, England : 1993), 2021-02, Vol.179, p.109103, Article 109103

2021

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Computation of dark current in QWIPs using a modelling based on Ehrenfest theorem

Journal of physics. D, Applied physics, 2015-09, Vol.48 (36), p.365102-7

2015

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The influence of different indium-composition profiles on the electronic structure of lens-shaped InxGa1−xAs quantum dots

Journal of physics. D, Applied physics, 2012-06, Vol.45 (22)

2012

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Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells

Physica. E, Low-dimensional systems & nanostructures, 2014-07, Vol.61, p.158-166

2014

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Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces

Journal of applied physics, 2001-09, Vol.90 (5), p.2280-2289

2001

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Magnetophotoluminescence study of GaAs/AlGaAs coupled double quantum wells with bimodal heterointerface roughness

Journal of luminescence, 2012-05, Vol.132 (5), p.1183-1187

2012

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High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2×4) surface reconstruction

Sensors and actuators. A. Physical., 2024-08, Vol.374, p.115464, Article 115464

2024

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In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots

Materials research express, 2019-11, Vol.6 (12), p.126205

2019

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Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer

Sensors and actuators. A. Physical., 2020-01, Vol.301, p.111725, Article 111725

2020

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Correlation between luminescence properties of AlxGa1−xAs∕GaAs single quantum wells and barrier composition fluctuation

Journal of applied physics, 2007-06, Vol.101 (11)

2007

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Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(0 0 1) surface

Journal of crystal growth, 2003-04, Vol.251 (1), p.101-105

2003

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Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder

Journal of luminescence, 2010-03, Vol.130 (3), p.460-465

2010

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High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition

Applied physics letters, 2006-03, Vol.88 (12)

2006

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High-detectivity infrared photodetector based on InAs submonolayer quantum dots grown on GaAs(001) with a 2 × 4 surface reconstruction

Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors

Detection of Water Contaminants by Organic Transistors as Gas Sensors in a Bottom-Gate/Bottom-Contact Cross-Linked Structure

Response testing of Schottky-barrier GaAs detectors with alpha particles

Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing

Anisotropy of electron and hole g -factors in (In,Ga)As quantum dots

Prognostic factors for critically ill patients with solid cancer tumours admitted to a medical intensive care unit

Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors

Modeling the 3D In profile of InxGa1−xAs/GaAs quantum dots

Mid-infrared photodetection in an AlGaAs/GaAs quantum-well infrared photodetector using photoinduced noise

Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

Modeling noise in superlattice quantum-well infrared photodetectors

A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry

Computation of dark current in QWIPs using a modelling based on Ehrenfest theorem

The influence of different indium-composition profiles on the electronic structure of lens-shaped InxGa1−xAs quantum dots

Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells

Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces

Magnetophotoluminescence study of GaAs/AlGaAs coupled double quantum wells with bimodal heterointerface roughness

High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2×4) surface reconstruction

In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots

Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer

Correlation between luminescence properties of AlxGa1−xAs∕GaAs single quantum wells and barrier composition fluctuation

Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(0 0 1) surface

Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder

High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition

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