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Tuning the Liquid-Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures

Nanomaterials (Basel, Switzerland), 2023-02, Vol.13 (5), p.894

2023

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Transmission electron microscopy dislocation study of Ge-on-Si films supporting a new lattice-mismatch relaxation mechanism

Journal of applied physics, 2020-02, Vol.127 (7)

2020

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Aqueous-Based Binary Sulfide Nanoparticle Inks for Cu2ZnSnS4 Thin Films Stabilized with Tin(IV) Chalcogenide Complexes

Nanomaterials (Basel, Switzerland), 2019-09, Vol.9 (10), p.1382

2019

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Effects of Au catalyst geometry on Ge films grown laterally on Si using the vapor-liquid-solid mechanism

Journal of physics. D, Applied physics, 2019-06, Vol.52 (25), p.255101

2019

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New Relaxation Mechanism Enabling High-Quality, Laterally Grown Ge on Si

Crystal growth & design, 2019-01, Vol.19 (1), p.23-29

2019

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Global fitting equation for constant-loss inverted taper

Optics express, 2019-02, Vol.27 (4), p.5192-5202

2019

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SiGe films and graded buffers grown by liquid phase epitaxy from different growth solution compositions

Journal of crystal growth, 2019-03, Vol.510, p.65-75

2019

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Nucleation of InP on Si under micro-crucibles at ultra-high vacuum using a two-step VLS process

Journal of physics. D, Applied physics, 2024-10, Vol.57 (41), p.415101

2024

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Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film

Journal of crystal growth, 2020-04, Vol.535, p.125541, Article 125541

2020

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Reconciling Nano- and Micro-Scale VLS Growth by Including Multi-Scale Supersaturation: A Growth Model Applied to Lateral Ge Films on Si

IEEE transactions on nanotechnology, 2021, Vol.20, p.592-597

2021

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Hot Extrusion of ZnSb-Based Thermoelectric Materials; A Novel Approach for Scale-Up Production

Journal of Manufacturing and Materials Processing, 2019-09, Vol.3 (3), p.58

2019

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Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy

Journal of crystal growth, 2018-02, Vol.483, p.223-227

2018

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Photoluminescence from low thermal budget silicon nano-crystals in silica

Nanotechnology, 2015-07, Vol.26 (29), p.295201-295201

2015

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Ideal, constant-loss nanophotonic mode converter using a Lagrangian approach

Optics express, 2016-03, Vol.24 (6), p.6680-6688

2016

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Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

Journal of applied physics, 2007-08, Vol.102 (3)

2007

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Integratable Nanowire Transistors

Nano letters, 2008-12, Vol.8 (12), p.4410-4414

2008

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Novel, low-index waveguide as laser external cavity

Optics express, 2012-05, Vol.20 (10), p.11137-11142

2012

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Single-Crystal, Si Nanotubes, and Their Mechanical Resonant Properties

Nano letters, 2009-04, Vol.9 (4), p.1511-1516

2009

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Lateral, Ge, nanowire growth on SiO2

Nanotechnology, 2011-02, Vol.22 (6), p.065201-065201

2011

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Guiding vapor–liquid–solid nanowire growth using SiO2

Nanotechnology, 2009-04, Vol.20 (14), p.145303-145303

2009

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Growth conditions of metal-catalyzed, laterally grown Ge films on Si

Thin solid films, 2020-09, Vol.709, p.138133, Article 138133

2020

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Interpreting Kelvin probe force microscopy under an applied electric field: local electronic behavior of vapor-liquid-solid Si nanowires

Nanotechnology, 2013-05, Vol.24 (20), p.205704-205704

2013

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Lateral, high-quality, metal-catalyzed semiconductor growth on amorphous and lattice-mismatched substrates for photovoltaics

Applied physics letters, 2010-09, Vol.97 (13), p.132110-132110-3

Quitoriano, Nathaniel J.

2010

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Formation of Nano-Tree and Nano-Ring Structures from Au-Si-Ge Eutectic Solids

2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC), 2021, p.1-2

2021

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Lateral, Ge, nanowire growth on SiO 2

Nanotechnology, 2011-02, Vol.22 (6), p.65201

2011

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Tuning the Liquid-Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures

Transmission electron microscopy dislocation study of Ge-on-Si films supporting a new lattice-mismatch relaxation mechanism

Aqueous-Based Binary Sulfide Nanoparticle Inks for Cu2ZnSnS4 Thin Films Stabilized with Tin(IV) Chalcogenide Complexes

Effects of Au catalyst geometry on Ge films grown laterally on Si using the vapor-liquid-solid mechanism

New Relaxation Mechanism Enabling High-Quality, Laterally Grown Ge on Si

Global fitting equation for constant-loss inverted taper

SiGe films and graded buffers grown by liquid phase epitaxy from different growth solution compositions

Nucleation of InP on Si under micro-crucibles at ultra-high vacuum using a two-step VLS process

Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film

Reconciling Nano- and Micro-Scale VLS Growth by Including Multi-Scale Supersaturation: A Growth Model Applied to Lateral Ge Films on Si

Hot Extrusion of ZnSb-Based Thermoelectric Materials; A Novel Approach for Scale-Up Production

Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy

Photoluminescence from low thermal budget silicon nano-crystals in silica

Ideal, constant-loss nanophotonic mode converter using a Lagrangian approach

Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

Integratable Nanowire Transistors

Novel, low-index waveguide as laser external cavity

Single-Crystal, Si Nanotubes, and Their Mechanical Resonant Properties

Lateral, Ge, nanowire growth on SiO2

Guiding vapor–liquid–solid nanowire growth using SiO2

Growth conditions of metal-catalyzed, laterally grown Ge films on Si

Interpreting Kelvin probe force microscopy under an applied electric field: local electronic behavior of vapor-liquid-solid Si nanowires

Lateral, high-quality, metal-catalyzed semiconductor growth on amorphous and lattice-mismatched substrates for photovoltaics

Formation of Nano-Tree and Nano-Ring Structures from Au-Si-Ge Eutectic Solids

Lateral, Ge, nanowire growth on SiO 2

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