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Tuning the Liquid-Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures

Nanomaterials (Basel, Switzerland), 2023-02, Vol.13 (5), p.894

2023

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Nucleation and solidification of laterally grown silicon micro-films on amorphous substrates using the VLS mechanism

Journal of crystal growth, 2014-04, Vol.391, p.1-6

2014

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Transmission electron microscopy dislocation study of Ge-on-Si films supporting a new lattice-mismatch relaxation mechanism

Journal of applied physics, 2020-02, Vol.127 (7)

2020

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Aqueous-Based Binary Sulfide Nanoparticle Inks for Cu2ZnSnS4 Thin Films Stabilized with Tin(IV) Chalcogenide Complexes

Nanomaterials (Basel, Switzerland), 2019-09, Vol.9 (10), p.1382

2019

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Effects of Au catalyst geometry on Ge films grown laterally on Si using the vapor-liquid-solid mechanism

Journal of physics. D, Applied physics, 2019-06, Vol.52 (25), p.255101

2019

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New Relaxation Mechanism Enabling High-Quality, Laterally Grown Ge on Si

Crystal growth & design, 2019-01, Vol.19 (1), p.23-29

2019

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Global fitting equation for constant-loss inverted taper

Optics express, 2019-02, Vol.27 (4), p.5192-5202

2019

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Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

Journal of applied physics, 2007-08, Vol.102 (3)

2007

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Nucleation of InP on Si under micro-crucibles at ultra-high vacuum using a two-step VLS process

Journal of physics. D, Applied physics, 2024-10, Vol.57 (41), p.415101

2024

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SiGe films and graded buffers grown by liquid phase epitaxy from different growth solution compositions

Journal of crystal growth, 2019-03, Vol.510, p.65-75

2019

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Characterizing defects and transport in Si nanowire devices using Kelvin probe force microscopy

Nanotechnology, 2012-10, Vol.23 (40), p.405706-1-9

2012

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Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film

Journal of crystal growth, 2020-04, Vol.535, p.125541, Article 125541

2020

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Reconciling Nano- and Micro-Scale VLS Growth by Including Multi-Scale Supersaturation: A Growth Model Applied to Lateral Ge Films on Si

IEEE transactions on nanotechnology, 2021, Vol.20, p.592-597

2021

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Interpreting Kelvin probe force microscopy under an applied electric field: local electronic behavior of vapor-liquid-solid Si nanowires

Nanotechnology, 2013-05, Vol.24 (20), p.205704-205704

2013

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Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy

Journal of crystal growth, 2018-02, Vol.483, p.223-227

2018

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Hot Extrusion of ZnSb-Based Thermoelectric Materials; A Novel Approach for Scale-Up Production

Journal of Manufacturing and Materials Processing, 2019-09, Vol.3 (3), p.58

2019

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Photoluminescence from low thermal budget silicon nano-crystals in silica

Nanotechnology, 2015-07, Vol.26 (29), p.295201-295201

2015

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Ideal, constant-loss nanophotonic mode converter using a Lagrangian approach

Optics express, 2016-03, Vol.24 (6), p.6680-6688

2016

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Mechanical resonance of clamped silicon nanowires measured by optical interferometry

Journal of applied physics, 2008-04, Vol.103 (7)

2008

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Gold nanoparticle deposition on Si by destabilising gold colloid with HF

Journal of colloid and interface science, 2012-03, Vol.370 (1), p.46-50

2012

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Integratable Nanowire Transistors

Nano letters, 2008-12, Vol.8 (12), p.4410-4414

2008

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Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor–liquid–solid technique

Journal of applied physics, 2014-12, Vol.116 (24)

2014

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Novel, low-index waveguide as laser external cavity

Optics express, 2012-05, Vol.20 (10), p.11137-11142

2012

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Single-Crystal, Si Nanotubes, and Their Mechanical Resonant Properties

Nano letters, 2009-04, Vol.9 (4), p.1511-1516

2009

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Growth conditions of metal-catalyzed, laterally grown Ge films on Si

Thin solid films, 2020-09, Vol.709, p.138133, Article 138133

2020

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Tuning the Liquid-Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures

Nucleation and solidification of laterally grown silicon micro-films on amorphous substrates using the VLS mechanism

Transmission electron microscopy dislocation study of Ge-on-Si films supporting a new lattice-mismatch relaxation mechanism

Aqueous-Based Binary Sulfide Nanoparticle Inks for Cu2ZnSnS4 Thin Films Stabilized with Tin(IV) Chalcogenide Complexes

Effects of Au catalyst geometry on Ge films grown laterally on Si using the vapor-liquid-solid mechanism

New Relaxation Mechanism Enabling High-Quality, Laterally Grown Ge on Si

Global fitting equation for constant-loss inverted taper

Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

Nucleation of InP on Si under micro-crucibles at ultra-high vacuum using a two-step VLS process

SiGe films and graded buffers grown by liquid phase epitaxy from different growth solution compositions

Characterizing defects and transport in Si nanowire devices using Kelvin probe force microscopy

Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film

Reconciling Nano- and Micro-Scale VLS Growth by Including Multi-Scale Supersaturation: A Growth Model Applied to Lateral Ge Films on Si

Interpreting Kelvin probe force microscopy under an applied electric field: local electronic behavior of vapor-liquid-solid Si nanowires

Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy

Hot Extrusion of ZnSb-Based Thermoelectric Materials; A Novel Approach for Scale-Up Production

Photoluminescence from low thermal budget silicon nano-crystals in silica

Ideal, constant-loss nanophotonic mode converter using a Lagrangian approach

Mechanical resonance of clamped silicon nanowires measured by optical interferometry

Gold nanoparticle deposition on Si by destabilising gold colloid with HF

Integratable Nanowire Transistors

Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor–liquid–solid technique

Novel, low-index waveguide as laser external cavity

Single-Crystal, Si Nanotubes, and Their Mechanical Resonant Properties

Growth conditions of metal-catalyzed, laterally grown Ge films on Si

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