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Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

Journal of applied physics, 2016-04, Vol.119 (15)

2016

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Simulation of the boron build-up formation during melting laser thermal annealing

Physica status solidi. C, 2014-01, Vol.11 (1), p.89-92

2014

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Large boron-interstitial cluster modelling in BF3 plasma implanted silicon

Physica status solidi. C, 2014-01, Vol.11 (1), p.117-120

2014

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Melt depth and time variations during pulsed laser thermal annealing with one and more pulses

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013, p.214-217

2013

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Blue shift of the absorption edge in AlGaInAs-GaInAs superlattices: Proposal for an original electro-optical modulator

Applied physics letters, 1988-12, Vol.53 (26), p.2632-2634

1988

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Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum-well lasers

Journal of applied physics, 1995-09, Vol.78 (6), p.3925-3930

1995

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Wet thermal oxidation of AlAsSb alloys lattice matched to InP

Journal of applied physics, 1997-06, Vol.81 (11), p.7600-7603

1997

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Oxide confining layer on an InP substrate

Journal of applied physics, 1999-02, Vol.85 (4), p.2428-2430

1999

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Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5 μm wavelength

Applied physics letters, 1997-05, Vol.70 (21), p.2858-2860

1997

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MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP

IEEE photonics technology letters, 1999-07, Vol.11 (7), p.770-772

1999

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Large boron-interstitial cluster modelling in BF sub(3) plasma implanted silicon

Physica status solidi. C, 2014-01, Vol.11 (1), p.117-120

2014

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Large boron‐interstitial cluster modelling in BF 3 plasma implanted silicon

Physica status solidi. C, 2014-01, Vol.11 (1), p.117-120

2014

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Growth conditions and characterization of InGaAs/GaAs strained layers superlattices

Journal of applied physics, 1984-04, Vol.55 (8), p.2904-2909

1984

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Kinematic versus dynamic approaches of x-ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells

Journal of applied physics, 1996-03, Vol.79 (5), p.2332-2336

1996

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Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications

Journal of electronic materials, 1997-12, Vol.26 (12), p.L32-L35

1997

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Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application

Journal of crystal growth, 1998-05, Vol.187 (3), p.347-354

1998

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Monolithic vertical cavity device lasing at 1.55 [micro sign]m in InGaAlAs system

Electronics letters, 1997, Vol.33 (10), p.868, Article 868

1997

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MBE growth of graded index AlGaInAs MQW lasers on InP

Journal of crystal growth, 1991-05, Vol.111 (1), p.484-488

1991

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BF{sub 3} PIII modeling: Implantation, amorphisation and diffusion

AIP conference proceedings, 2012-11, Vol.1496 (1)

2012

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High speed ultralow chirp 1.55 μm MBE grown GaInAs/AlGaInAs MQW DFB lasers

Electronics letters, 1992-05, Vol.28 (11), p.1040-1042, Article 1040

1992

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Low-threshold GRIN-SCH AlGaInAs 1.55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy

Electronics letters, 1990, Vol.26 (13), p.889

1990

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Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substrates

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.1292-1296

1995

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Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.33-36

2013

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Auto lattice matching effect for AllnAs grown by MBE at high substrate temperature

Journal of electronic materials, 1989-07, Vol.18 (4), p.505-510

1989

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Very low chirping of InGaAs-InGaAlAs MQW DFB BRS lasers under 10 Gbit/s modulation

IEEE journal of quantum electronics, 1993-06, Vol.29 (6), p.1676-1681, Article 1676

1993

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Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

Simulation of the boron build-up formation during melting laser thermal annealing

Large boron-interstitial cluster modelling in BF3 plasma implanted silicon

Melt depth and time variations during pulsed laser thermal annealing with one and more pulses

Blue shift of the absorption edge in AlGaInAs-GaInAs superlattices: Proposal for an original electro-optical modulator

Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum-well lasers

Wet thermal oxidation of AlAsSb alloys lattice matched to InP

Oxide confining layer on an InP substrate

Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5 μm wavelength

MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP

Large boron-interstitial cluster modelling in BF sub(3) plasma implanted silicon

Large boron‐interstitial cluster modelling in BF 3 plasma implanted silicon

Growth conditions and characterization of InGaAs/GaAs strained layers superlattices

Kinematic versus dynamic approaches of x-ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells

Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications

Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application

Monolithic vertical cavity device lasing at 1.55 [micro sign]m in InGaAlAs system

MBE growth of graded index AlGaInAs MQW lasers on InP

BF{sub 3} PIII modeling: Implantation, amorphisation and diffusion

High speed ultralow chirp 1.55 μm MBE grown GaInAs/AlGaInAs MQW DFB lasers

Low-threshold GRIN-SCH AlGaInAs 1.55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy

Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substrates

Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach

Auto lattice matching effect for AllnAs grown by MBE at high substrate temperature

Very low chirping of InGaAs-InGaAlAs MQW DFB BRS lasers under 10 Gbit/s modulation

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