UB Paderborn / Katalog / Suche / in CDI

1 – 17 von 17

Sortiert nach

500 nm electrically driven InGaN based laser diodes

Applied physics letters, 2009-02, Vol.94 (8), p.081119-081119-3

2009

Link zum Volltext

Verfügbarkeit prüfen

InGaN laser diodes with 50 mW output power emitting at 515 nm

Applied physics letters, 2009-08, Vol.95 (7), p.071103-071103-3

2009

Link zum Volltext

Verfügbarkeit prüfen

Quality and thermal stability of thin InGaN films

Journal of crystal growth, 2009-05, Vol.311 (10), p.2933-2936

2009

Link zum Volltext

Verfügbarkeit prüfen

Pros and cons of green InGaN laser on c-plane GaN

Physica Status Solidi (b), 2011-03, Vol.248 (3), p.652-657

2011

Link zum Volltext

Verfügbarkeit prüfen

Waveguide design of green InGaN laser diodes

Physica status solidi. A, Applications and materials science, 2010-06, Vol.207 (6), p.1328-1331

2010

Link zum Volltext

Verfügbarkeit prüfen

Measurement and simulation of filamentation in (Al,In)GaN laser diodes

Optics express, 2008-05, Vol.16 (10), p.6846-6859

2008

Link zum Volltext

Verfügbarkeit prüfen

Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S860-S863

2009

Link zum Volltext

Verfügbarkeit prüfen

Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S826-S829

2009

Link zum Volltext

Verfügbarkeit prüfen

True green InGaN laser diodes

Physica status solidi. A, Applications and materials science, 2010-06, Vol.207 (6), p.1318-1322

2010

Link zum Volltext

Verfügbarkeit prüfen

Growth of Silicon Carbide Bulk Crystals with a Modified Physical Vapor Transport Technique

Chemical vapor deposition, 2006-08, Vol.12 (8-9), p.557-561

2006

Link zum Volltext

Verfügbarkeit prüfen

Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

Physica Status Solidi (b), 2008-07, Vol.245 (7), p.1239-1256

2008

Link zum Volltext

Verfügbarkeit prüfen

Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC

Materials science forum, 2006-10, Vol.527-529, p.79-82

2006

Link zum Volltext

Verfügbarkeit prüfen

Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth

Materials science forum, 2007-01, Vol.556-557, p.259-262

2007

Link zum Volltext

Verfügbarkeit prüfen

Growth of silicon carbide bulk crystals with a modified physical vapor transport technique: Special issue on silicon carbide CVD for electronic device applications

Chemical vapor deposition, 2006, Vol.12 (8-9), p.557-561

2006

Link zum Volltext

Verfügbarkeit prüfen

Pros and cons of green InGaN laser on c-plane GaN : Polarization-Field Control in Nitride Light Emitters

Physica status solidi. B. Basic research, 2011, Vol.248 (3), p.652-657

2011

Link zum Volltext

Verfügbarkeit prüfen

Bulk growth of SiC -review basic solid on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution: Silicon Carbide. Current Trends in Research and Applications

Physica status solidi. B. Basic research, 2008, Vol.245 (7), p.1239-1256

2008

Link zum Volltext

Verfügbarkeit prüfen

Bulk Growth of SiC – Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution

Silicon Carbide, 2009, p.1-31

2009

Link zum Volltext

Verfügbarkeit prüfen

1 – 17 von 17

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(16)
Mit Volltextzugriff
(17)

Publikationsform

Artikel
(16)
Buchkapitel
(1)

Sprache

Englisch
(17)
Japanisch
(8)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

500 nm electrically driven InGaN based laser diodes

InGaN laser diodes with 50 mW output power emitting at 515 nm

Quality and thermal stability of thin InGaN films

Pros and cons of green InGaN laser on c-plane GaN

Waveguide design of green InGaN laser diodes

Measurement and simulation of filamentation in (Al,In)GaN laser diodes

Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes

Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift

True green InGaN laser diodes

Growth of Silicon Carbide Bulk Crystals with a Modified Physical Vapor Transport Technique

Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC

Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth

Growth of silicon carbide bulk crystals with a modified physical vapor transport technique: Special issue on silicon carbide CVD for electronic device applications

Pros and cons of green InGaN laser on c-plane GaN : Polarization-Field Control in Nitride Light Emitters

Bulk growth of SiC -review basic solid on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution: Silicon Carbide. Current Trends in Research and Applications

Bulk Growth of SiC – Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution

Suchergebnisse filtern