UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR

IEEE transactions on microwave theory and techniques, 2007-12, Vol.55 (12), p.2660-2669

2007

Volltextzugriff (PDF)

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

IEEE journal of the Electron Devices Society, 2017-05, Vol.5 (3), p.175-181

2017

Volltextzugriff (PDF)

Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15- \mu m Ultrashort Gate Length

IEEE transactions on microwave theory and techniques, 2019-07, Vol.67 (7), p.2475-2482

2019

Volltextzugriff (PDF)

Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps

IEEE electron device letters, 2018-01, Vol.39 (1), p.107-110

2018

Volltextzugriff (PDF)

An Unequally Spaced Multi-Tone Load-Pull Characterization Technique for Simultaneous Linearity and Efficiency Assessment of RF Power Devices

IEEE transactions on microwave theory and techniques, 2019-07, Vol.67 (7), p.2505-2513

2019

Volltextzugriff (PDF)

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

IEEE transactions on microwave theory and techniques, 2016-05, Vol.64 (5), p.1351-1358

2016

Volltextzugriff (PDF)

On-Wafer Single-Pulse Thermal Load-Pull RF Characterization of Trapping Phenomena in AlGaN/GaN HEMTs

IEEE transactions on microwave theory and techniques, 2016-03, Vol.64 (3), p.767-775

2016

Volltextzugriff (PDF)

Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties

IEEE electron device letters, 2017-08, Vol.38 (8), p.1109-1112

2017

Volltextzugriff (PDF)

Characterization of Defects in AlGaN/GaN HEMTs Based on Nonlinear Microwave Current Transient Spectroscopy

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2135-2141

2017

Volltextzugriff (PDF)

Multiharmonic Volterra Model Dedicated to the Design of Wideband and Highly Efficient GaN Power Amplifiers

IEEE transactions on microwave theory and techniques, 2012-06, Vol.60 (6), p.1817-1828

2012

Volltextzugriff (PDF)

Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

International journal of microwave and wireless technologies, 2016-06, Vol.8 (4-5), p.663-672

2016

Volltextzugriff (PDF)

Investigation of Fast and Slow Charge Trapping Mechanisms of GaN/A1GaN HEMTs through Pulsed I-V Measurements and the Associated New Trap Model

2018 IEEE/MTT-S International Microwave Symposium - IMS, 2018, p.720-723

2018

Volltextzugriff (PDF)

Experimental Characterization and Modeling of the Thermal Behavior of SiGe HBTs

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1921-1927

2012

Volltextzugriff (PDF)

Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15-[Formula Omitted]m Ultrashort Gate Length

IEEE transactions on microwave theory and techniques, 2019-01, Vol.67 (7), p.2475

2019

Volltextzugriff (PDF)

RF-Interferences Generate Chaotic GHz FM-Carrier for Communications

IEEE journal of quantum electronics, 2007-05, Vol.43 (5), p.426-433

2007

Volltextzugriff (PDF)

Non-linear electro-thermal AlGaN/GaN model including large-signal dynamic thermal-trapping effects

2016 IEEE MTT-S International Microwave Symposium (IMS), 2016, p.1-4

2016

Volltextzugriff (PDF)

New design method of uniform and nonuniform distributed power amplifiers

IEEE transactions on microwave theory and techniques, 2001-12, Vol.49 (12), p.2494-2500

2001

Volltextzugriff (PDF)

Electrical Measurement of the Thermal Impedance of Bipolar Transistors

IEEE electron device letters, 2010-09, Vol.31 (9), p.939-941

2010

Volltextzugriff (PDF)

Non-linear electrical modeling of MASMOS structure to design power amplifiers for 4G applications

International journal of microwave and wireless technologies, 2018-02, Vol.10 (1), p.9-17

2018

Volltextzugriff (PDF)

Millimeter-wave power amplifier linearity characterization using Unequally Spaced Multi-Tone stimulus

2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020, p.755-758

2020

Volltextzugriff (PDF)

An Improved Physics-Based Formulation of the Microwave p-i-n Diode Impedance

IEEE microwave and wireless components letters, 2007-03, Vol.17 (3), p.211-213

2007

Volltextzugriff (PDF)

Recursive GF(2 N ) encoders using left-circulate function for optimum PSK–TCM schemes

Signal processing, 2010-09, Vol.90 (9), p.2708-2713

2010

Volltextzugriff (PDF)

Improved Frey Chaotic Digital Encoder for Trellis-Coded Modulation

IEEE transactions on circuits and systems. II, Express briefs, 2009-06, Vol.56 (6), p.509-513

2009

Volltextzugriff (PDF)

Behavioral Thermal Modeling for Microwave Power Amplifier Design

IEEE transactions on microwave theory and techniques, 2007-11, Vol.55 (11), p.2290-2297

2007

Volltextzugriff (PDF)

Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters

International journal of microwave and wireless technologies, 2015-06, Vol.7 (3-4), p.287-296

2015

Volltextzugriff (PDF)

1 – 25 von 181

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(87)
Mit Volltextzugriff
(157)

Publikationsform

Sprache

1 weiteren anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(83)
Technology
(82)
Engineering
(81)
Engineering, Electrical & Electronic
(79)
Engineering Sciences
(57)
Electronics
(56)
Power Amplifiers
(28)
Gallium Nitride
(27)
Frequency Measurement
(24)
Hemts
(24)
Radio Frequency
(24)
Telecommunications
(19)
Applied Sciences
(18)
Exact Sciences And Technology
(18)
Modfets
(18)
Physical Sciences
(18)
Power Measurement
(17)
Transistors
(17)
Impedance
(16)
Pulse Measurements
(16)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15- \mu m Ultrashort Gate Length

Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps

An Unequally Spaced Multi-Tone Load-Pull Characterization Technique for Simultaneous Linearity and Efficiency Assessment of RF Power Devices

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

On-Wafer Single-Pulse Thermal Load-Pull RF Characterization of Trapping Phenomena in AlGaN/GaN HEMTs

Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties

Characterization of Defects in AlGaN/GaN HEMTs Based on Nonlinear Microwave Current Transient Spectroscopy

Multiharmonic Volterra Model Dedicated to the Design of Wideband and Highly Efficient GaN Power Amplifiers

Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

Investigation of Fast and Slow Charge Trapping Mechanisms of GaN/A1GaN HEMTs through Pulsed I-V Measurements and the Associated New Trap Model

Experimental Characterization and Modeling of the Thermal Behavior of SiGe HBTs

Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15-[Formula Omitted]m Ultrashort Gate Length

RF-Interferences Generate Chaotic GHz FM-Carrier for Communications

Non-linear electro-thermal AlGaN/GaN model including large-signal dynamic thermal-trapping effects

New design method of uniform and nonuniform distributed power amplifiers

Electrical Measurement of the Thermal Impedance of Bipolar Transistors

Non-linear electrical modeling of MASMOS structure to design power amplifiers for 4G applications

Millimeter-wave power amplifier linearity characterization using Unequally Spaced Multi-Tone stimulus

An Improved Physics-Based Formulation of the Microwave p-i-n Diode Impedance

Recursive GF(2 N ) encoders using left-circulate function for optimum PSK–TCM schemes

Improved Frey Chaotic Digital Encoder for Trellis-Coded Modulation

Behavioral Thermal Modeling for Microwave Power Amplifier Design

Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters

Suchergebnisse filtern