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Festkorperprobleme 14

Queisser, H.J

1st edition., 2007

Volltextzugriff (PDF)

On the thickness dependence of open circuit voltages of p-n junction solar cells

Solar energy materials and solar cells, 1993-05, Vol.29 (4), p.397-401

1993

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Monocrystalline Si waffles for thin solar cells fabricated by the novel perforated-silicon process

Applied physics. A, Materials science & processing, 1998-08, Vol.67 (2), p.151-154

1998

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Solar cell efficiency and carrier multiplication in Si1−xGex alloys

Journal of applied physics, 1998-04, Vol.83 (8), p.4213-4221

1998

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Thermodynamic efficiency limits for semiconductor solar cells with carrier multiplication

Solar energy materials and solar cells, 1996, Vol.41, p.419-425

1996

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Density of states of grain boundaries in silicon

Solid state communications, 1982-05, Vol.42 (6), p.415-417

1982

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Electrons and Defects in Semiconductors

MRS proceedings, 1998-01, Vol.510, Article 289

Queisser, H.J.

1998

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Optical determination of carrier mobility in GaAs

Solid state communications, 1976, Vol.18 (7), p.861-863

1976

Volltextzugriff (PDF)

Forward characteristics and efficiencies of silicon solar cells

Solid-state electronics, 1962, Vol.5 (1), p.1-10

Queisser, H.J.

1962

Volltextzugriff (PDF)

Solution growth of silicon on Al-Si coated quartz glass substrates

Materials letters, 1994, Vol.19 (1), p.1-6

1994

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Photoluminescence and solution growth of gallium arsenide

Solid-state electronics, 1966-01, Vol.9 (4), p.311,IN1,313-312,IN2,314

1966

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Excited singlet states of molybdenum chloride clusters

Chemical physics letters, 1993-01, Vol.202 (5), p.415-418

1993

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First MOS transistors on insulator by silicon saturated liquid solution epitaxy

IEEE electron device letters, 1992-05, Vol.13 (5), p.294-296

1992

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Principles and technology of photovoltaic energy conversion

Proceedings of 4th International Conference on Solid-State and IC Technology, 1995, p.146-150

1995

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PHOTOLUMINESCENCE OF SELENIUM AND SELENIUM-TELLURIUM MIXED CRYSTALS

The Physics of Selenium and Tellurium, 1969, p.289-292

QUEISSER, H.J.

1969

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Detailed Balance Limit of Efficiency of p-n Junction Solar Cells

Journal of applied physics, 1961-03, Vol.32 (3), p.510-519

1961

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Charged Defect States at Silicon Grain Boundaries

Materials science forum, 1986-01, Vol.10-12, p.229-234

1986

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Luminescence of zinc doped solution grown gallium arsenide

Solid state communications, 1967-04, Vol.5 (4), p.i-ii

1967

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Profiling of deep impurities by persistent photocurrent measurements

Applied physics letters, 1982-10, Vol.41 (7), p.628-629

1982

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Periodicity-dependent photoluminescence of (GaAs) m (AlAs) n superlattices

Journal of luminescence, 1988-02, Vol.40, p.721-722

1988

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Persistent photoconductivity in sulfur-diffused silicon

Solid state communications, 1984-01, Vol.51 (11), p.875-877

1984

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Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements

Materials science forum, 1986-01, Vol.10-12, p.979-984

1986

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Solids at Stuttgart

Materials research bulletin, 1978-01, Vol.13 (4), p.369-383

Queisser, H.J.

1978

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Real-time X-ray topography: Defect dynamics and crystal growth

Journal of crystal growth, 1981-01, Vol.52 (2), p.897-906

1981

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Calculated dispersion of surface excitons

Solid state communications, 1975-06, Vol.16 (10), p.1125-1128

1975

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Festkorperprobleme 14

On the thickness dependence of open circuit voltages of p-n junction solar cells

Monocrystalline Si waffles for thin solar cells fabricated by the novel perforated-silicon process

Solar cell efficiency and carrier multiplication in Si1−xGex alloys

Thermodynamic efficiency limits for semiconductor solar cells with carrier multiplication

Density of states of grain boundaries in silicon

Electrons and Defects in Semiconductors

Optical determination of carrier mobility in GaAs

Forward characteristics and efficiencies of silicon solar cells

Solution growth of silicon on Al-Si coated quartz glass substrates

Photoluminescence and solution growth of gallium arsenide

Excited singlet states of molybdenum chloride clusters

First MOS transistors on insulator by silicon saturated liquid solution epitaxy

Principles and technology of photovoltaic energy conversion

PHOTOLUMINESCENCE OF SELENIUM AND SELENIUM-TELLURIUM MIXED CRYSTALS

Detailed Balance Limit of Efficiency of p-n Junction Solar Cells

Charged Defect States at Silicon Grain Boundaries

Luminescence of zinc doped solution grown gallium arsenide

Profiling of deep impurities by persistent photocurrent measurements

Periodicity-dependent photoluminescence of (GaAs) m (AlAs) n superlattices

Persistent photoconductivity in sulfur-diffused silicon

Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements

Solids at Stuttgart

Real-time X-ray topography: Defect dynamics and crystal growth

Calculated dispersion of surface excitons

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