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Nanophotonic crystals on unpolished sapphire substrates for deep-UV light-emitting diodes

Scientific reports, 2021-03, Vol.11 (1), p.4981-4981, Article 4981

2021

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Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality

IEEE electron device letters, 2021-09, Vol.42 (9), p.1299-1302

2021

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Electrical Characteristics of In0.53Ga0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4183-4187

2022

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Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs

Micromachines (Basel), 2023-08, Vol.14 (8), p.1606

2023

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Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3466-3472

2016

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Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition

Applied physics letters, 2016-09, Vol.109 (10)

2016

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Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition

Applied physics letters, 2017-01, Vol.110 (2)

2017

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InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment

IEEE electron device letters, 2017-03, Vol.38 (3), p.310-313

2017

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Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

Applied physics letters, 2013-09, Vol.103 (14)

2013

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The influence of deposition temperature and annealing temperature on Ga-doped SnO2 films prepared by direct current magnetron sputtering

Journal of alloys and compounds, 2016-12, Vol.687, p.1012-1020

2016

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Effect of Sn-substituted Ga and In dopant content on the structural, electrical, and optical properties of p-type X-doped SnO2 (X = Ga and In) films: Testing the photoelectronic effect of X-doped SnO2/n-Si junctions

Journal of photochemistry and photobiology. A, Chemistry., 2019-05, Vol.376, p.88-99

2019

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Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices

AIP advances, 2017-08, Vol.7 (8), p.085208-085208-6

2017

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Eliminating the charge compensation effect in Ga-doped SnO2 films by N doping

Journal of alloys and compounds, 2019-03, Vol.776, p.276-286

2019

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A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

Journal of physics. D, Applied physics, 2017-03, Vol.50 (14)

2017

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Studying the influence of deposition temperature and nitrogen contents on the structural, optical, and electrical properties of N-doped SnO2 films prepared by direct current magnetron sputtering

Ceramics international, 2019-05, Vol.45 (7), p.9147-9156

2019

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E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V th Stability by Field Plate Engineering

IEEE electron device letters, 2021-09, Vol.42 (9), p.1268-1271

2021

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High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

IEEE electron device letters, 2018-07, Vol.39 (7), p.991-994

2018

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Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density

IEEE electron device letters, 2015-12, Vol.36 (12), p.1277-1280

2015

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High Performance Inversion-Mode In0.53Ga0.47As FinFETs for Logic and RF Applications

IEEE transactions on nanotechnology, 2023-01, p.1-5

2023

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In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment

IEEE electron device letters, 2018-03, Vol.39 (3), p.339-342

2018

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Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors

IEEE electron device letters, 2016-08, Vol.37 (8), p.974-977

2016

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High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

IEEE electron device letters, 2017-06, Vol.38 (6), p.771-774

2017

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Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2774-2778

2014

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Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack

IEEE transactions on electron devices, 2015-12, Vol.62 (12), p.3987-3991

2015

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Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.188-191

2022

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Nanophotonic crystals on unpolished sapphire substrates for deep-UV light-emitting diodes

Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality

Electrical Characteristics of In0.53Ga0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes

Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs

Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment

Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition

Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition

InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment

Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

The influence of deposition temperature and annealing temperature on Ga-doped SnO2 films prepared by direct current magnetron sputtering

Effect of Sn-substituted Ga and In dopant content on the structural, electrical, and optical properties of p-type X-doped SnO2 (X = Ga and In) films: Testing the photoelectronic effect of X-doped SnO2/n-Si junctions

Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices

Eliminating the charge compensation effect in Ga-doped SnO2 films by N doping

A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

Studying the influence of deposition temperature and nitrogen contents on the structural, optical, and electrical properties of N-doped SnO2 films prepared by direct current magnetron sputtering

E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V th Stability by Field Plate Engineering

High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density

High Performance Inversion-Mode In0.53Ga0.47As FinFETs for Logic and RF Applications

In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment

Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors

High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack

Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability

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