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Antigenicity and receptor affinity of SARS-CoV-2 BA.2.86 spike

Nature (London), 2023-12, Vol.624 (7992), p.639-644

2023

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Impact of Self-Heating Effect on Transistor Characterization and Reliability Issues in Sub-10 nm Technology Nodes

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.829-836

2019

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Unicondylar knee replacement versus total knee replacement for the treatment of medial knee osteoarthritis: a systematic review and meta-analysis

Archives of orthopaedic and trauma surgery, 2021-08, Vol.141 (8), p.1361-1372

2021

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CREaTor: zero-shot cis-regulatory pattern modeling with attention mechanisms

Genome Biology, 2023-11, Vol.24 (1), p.266-22, Article 266

2023

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Interface coupling in graphene/fluorographene heterostructure for high-performance graphene/silicon solar cells

Nano energy, 2016-10, Vol.28, p.12-18

2016

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Variation in the Calyx Color in Two Styrax japonicus Varieties Is Attributed to Varied Anthocyanin Levels as Revealed by Integrated Metabolomic and Transcriptomic Analyses

Forests, 2023-07, Vol.14 (7), p.1413

2023

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Investigation of Self-Heating Effect on Ballistic Transport Characterization for Si FinFETs Featuring Ultrafast Pulsed IV Technique

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.909-915

2017

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Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.350-357

2020

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Ultra-Fast (ns-Scale) Characterization of NBTI Behaviors in Si pFinFETs

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.577-583

2020

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SARS-CoV-2 omicron BA.2.87.1 exhibits higher susceptibility to serum neutralization than EG.5.1 and JN.1

Emerging microbes & infections, 2024-12, Vol.13 (1), p.2359004

2024

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Correlation of PON1 polymorphisms with ankylosing spondylitis susceptibility: A case-control study in Chinese Han population

Medicine (Baltimore), 2017-10, Vol.96 (42), p.e7416-e7416

2017

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Re-examination of Hot Carrier Degradation Mechanism in Ultra-scaled nFinFETs

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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Protective effect of anthrax toxin receptor 2 polymorphism rs4333130 against the risk of ankylosing spondylitis

Medicine (Baltimore), 2020-07, Vol.99 (28), p.e19942-e19942

2020

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Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5315-5321

2020

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Quantitative Characterization of Ferroelectric/Dielectric Interface Traps by Pulse Measurements

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1214-1220

2021

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A Highly Compact Nonvolatile Ternary Content Addressable Memory (TCAM) With Ultralow Power and 200-ps Search Operation

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4259-4264

2022

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An Euler-Lagrange Equation Oriented Solution for Write Energy Minimization of STT-MRAM

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3686-3689

2019

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Exploration of electrochemical behavior of Sb-based porous carbon composites anode for sodium-ion batteries

Journal of colloid and interface science, 2024-11, Vol.673, p.26-36

2024

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Multimedia teaching resource allocation method for distance online education based on packet cluster mapping

International journal of information and communication technology, 2022, Vol.1 (1), p.1

2022

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Wake-Up Free La-Doped HfO2-ZrO2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique

IEEE electron device letters, 2022-10, Vol.43 (10), p.1665-1668

2022

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Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-6

2024

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Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-6

2024

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Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (> 10^) of HfZrO Anti-ferroelectrics for DRAM Applications

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.P11.EM-1-P11.EM-6

2024

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Wake-Up Free La-Doped HfO 2 -ZrO 2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique

IEEE electron device letters, 2022-10, Vol.43 (10), p.1665-1668

2022

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Fermi-Level Pinning Engineering for Achieving High-Performance Ge-Based Resistive Memory With Ultrahigh Self-Rectifying Ratio (> 105)

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6751-6756

2022

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Antigenicity and receptor affinity of SARS-CoV-2 BA.2.86 spike

Impact of Self-Heating Effect on Transistor Characterization and Reliability Issues in Sub-10 nm Technology Nodes

Unicondylar knee replacement versus total knee replacement for the treatment of medial knee osteoarthritis: a systematic review and meta-analysis

CREaTor: zero-shot cis-regulatory pattern modeling with attention mechanisms

Interface coupling in graphene/fluorographene heterostructure for high-performance graphene/silicon solar cells

Variation in the Calyx Color in Two Styrax japonicus Varieties Is Attributed to Varied Anthocyanin Levels as Revealed by Integrated Metabolomic and Transcriptomic Analyses

Investigation of Self-Heating Effect on Ballistic Transport Characterization for Si FinFETs Featuring Ultrafast Pulsed IV Technique

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Ultra-Fast (ns-Scale) Characterization of NBTI Behaviors in Si pFinFETs

SARS-CoV-2 omicron BA.2.87.1 exhibits higher susceptibility to serum neutralization than EG.5.1 and JN.1

Correlation of PON1 polymorphisms with ankylosing spondylitis susceptibility: A case-control study in Chinese Han population

Re-examination of Hot Carrier Degradation Mechanism in Ultra-scaled nFinFETs

Protective effect of anthrax toxin receptor 2 polymorphism rs4333130 against the risk of ankylosing spondylitis

Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method

Quantitative Characterization of Ferroelectric/Dielectric Interface Traps by Pulse Measurements

A Highly Compact Nonvolatile Ternary Content Addressable Memory (TCAM) With Ultralow Power and 200-ps Search Operation

An Euler-Lagrange Equation Oriented Solution for Write Energy Minimization of STT-MRAM

Exploration of electrochemical behavior of Sb-based porous carbon composites anode for sodium-ion batteries

Multimedia teaching resource allocation method for distance online education based on packet cluster mapping

Wake-Up Free La-Doped HfO2-ZrO2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (> 10^) of HfZrO Anti-ferroelectrics for DRAM Applications

Wake-Up Free La-Doped HfO 2 -ZrO 2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique

Fermi-Level Pinning Engineering for Achieving High-Performance Ge-Based Resistive Memory With Ultrahigh Self-Rectifying Ratio (> 105)

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