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Artificial optoelectronic synaptic characteristics of Bi2FeMnO6 ferroelectric memristor for neuromorphic computing

Materials & design, 2022-10, Vol.222, p.111046, Article 111046

2022

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A Review of a Good Binary Ferroelectric Ceramic: BaTiO3–BiFeO3

ACS applied electronic materials, 2022-05, Vol.4 (5), p.2109-2145

2022

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A highly sensitive, foldable and wearable pressure sensor based on MXene-coated airlaid paper for electronic skin

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-10, Vol.9 (37), p.12642-12649

2021

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In-sensor reservoir computing based on optoelectronic synaptic devices

Applied physics letters, 2023-09, Vol.123 (10)

2023

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BaTiO3-based Ferroelectric Thin Film Capacitor on Silicon for Ultra-high Energy Storage Performance at Low Electric Field Strength

IEEE electron device letters, 2023-08, Vol.44 (8), p.1-1

2023

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Synaptic learning behavior and neuromorphic computing of Au/MXene/NiO/FTO artificial synapse

Applied physics letters, 2023-09, Vol.123 (13)

2023

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Photodiode characteristics of HfO2 thin films prepared by magnetron sputtering

Materials & design, 2020-03, Vol.188, p.108465, Article 108465

2020

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Superior energy storage and discharge performance achieved in PbHfO3-based antiferroelectric ceramics

Journal of applied physics, 2024-03, Vol.135 (9)

2024

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Low-cost composite film triboelectric nanogenerators for a self-powered touch sensor

Nanoscale, 2023-03, Vol.15 (13), p.6263-6272

2023

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Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

Nanomaterials (Basel, Switzerland), 2019-08, Vol.9 (8), p.1124

2019

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Excellent energy storage properties, domain mechanism, and temperature stability of lead-free BaTiO3-Bi(Mg1/2Sn1/2)O3 bulk ferroelectrics

Applied physics letters, 2023-04, Vol.122 (17)

2023

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Enhanced electrocaloric analysis and energy-storage performance of lanthanum modified lead titanate ceramics for potential solid-state refrigeration applications

Scientific reports, 2018-01, Vol.8 (1), p.396-396, Article 396

2018

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Oxygen-Vacancy-Related High Temperature Dielectric Relaxation in (Pb1−xBax)ZrO3 Ceramics

Journal of the American Ceramic Society, 2015-02, Vol.98 (2), p.551-558

2015

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Oxygen-vacancy-related relaxation and conduction behavior in (Pb1- x Ba x )(Zr0.95Ti0.05)O3 ceramics

AIP advances, 2014-10, Vol.4 (10), p.107141-107141-11

2014

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Energy storage properties and electrocaloric effect of Ba0.65Sr0.35TiO3 ceramics near room temperature

Journal of materials science. Materials in electronics, 2018, Vol.29 (2), p.1075-1081

2018

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Phase structure analysis and pyroelectric energy harvesting performance of Ba(Hf x Ti 1 ‐x )O 3 ceramics

Journal of the American Ceramic Society, 2019-06, Vol.102 (6), p.3623-3629

2019

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Excellent energy storage properties realized in novel BaTiO3-based lead-free ceramics by regulating relaxation behavior

Journal of Materiomics, 2023-09, Vol.9 (5), p.910-919

2023

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An adjustable multistage resistance switching behavior of a photoelectric artificial synaptic device with a ferroelectric diode effect for neuromorphic computing

Materials horizons, 2024-06, Vol.11 (12), p.2886-2897

2024

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Application of artificial synapse based on all-inorganic perovskite memristor in neuromorphic computing

Nano materials science, 2024-02, Vol.6 (1), p.68-76

2024

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Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

Nanomaterials (Basel, Switzerland), 2021-10, Vol.11 (10), p.2705

2021

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An Artificial Synapse Based on CsPbI3 Thin Film

Micromachines (Basel), 2022-02, Vol.13 (2), p.284

2022

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Neuromorphic Computing of Optoelectronic Artificial BFCO/AZO Heterostructure Memristors Synapses

Nanomaterials (Basel, Switzerland), 2024-04, Vol.14 (7), p.583

2024

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Light–induced transition of charged carrier transport in symmetric metal–semiconductor–metal contacts

Results in physics, 2023-04, Vol.47, p.106384, Article 106384

2023

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Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Nanomaterials (Basel, Switzerland), 2023-01, Vol.13 (1), p.39

2023

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Superior Energy and Power Density Realized in Pb(Hf1-xTix)O3 System at Low Electric Field

Energy material advances, 2023, Vol.4

2023

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Artificial optoelectronic synaptic characteristics of Bi2FeMnO6 ferroelectric memristor for neuromorphic computing

A Review of a Good Binary Ferroelectric Ceramic: BaTiO3–BiFeO3

A highly sensitive, foldable and wearable pressure sensor based on MXene-coated airlaid paper for electronic skin

In-sensor reservoir computing based on optoelectronic synaptic devices

BaTiO3-based Ferroelectric Thin Film Capacitor on Silicon for Ultra-high Energy Storage Performance at Low Electric Field Strength

Synaptic learning behavior and neuromorphic computing of Au/MXene/NiO/FTO artificial synapse

Photodiode characteristics of HfO2 thin films prepared by magnetron sputtering

Superior energy storage and discharge performance achieved in PbHfO3-based antiferroelectric ceramics

Low-cost composite film triboelectric nanogenerators for a self-powered touch sensor

Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

Excellent energy storage properties, domain mechanism, and temperature stability of lead-free BaTiO3-Bi(Mg1/2Sn1/2)O3 bulk ferroelectrics

Enhanced electrocaloric analysis and energy-storage performance of lanthanum modified lead titanate ceramics for potential solid-state refrigeration applications

Oxygen-Vacancy-Related High Temperature Dielectric Relaxation in (Pb1−xBax)ZrO3 Ceramics

Oxygen-vacancy-related relaxation and conduction behavior in (Pb1- x Ba x )(Zr0.95Ti0.05)O3 ceramics

Energy storage properties and electrocaloric effect of Ba0.65Sr0.35TiO3 ceramics near room temperature

Phase structure analysis and pyroelectric energy harvesting performance of Ba(Hf x Ti 1 ‐x )O 3 ceramics

Excellent energy storage properties realized in novel BaTiO3-based lead-free ceramics by regulating relaxation behavior

An adjustable multistage resistance switching behavior of a photoelectric artificial synaptic device with a ferroelectric diode effect for neuromorphic computing

Application of artificial synapse based on all-inorganic perovskite memristor in neuromorphic computing

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

An Artificial Synapse Based on CsPbI3 Thin Film

Neuromorphic Computing of Optoelectronic Artificial BFCO/AZO Heterostructure Memristors Synapses

Light–induced transition of charged carrier transport in symmetric metal–semiconductor–metal contacts

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Superior Energy and Power Density Realized in Pb(Hf1-xTix)O3 System at Low Electric Field

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