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Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors

Journal of applied physics, 2019-05, Vol.125 (18)

2019

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Effects of surface properties on barrier height and barrier inhomogeneities of platinum contacts to n-type 4H-SiC

Applied physics letters, 2013-07, Vol.103 (3)

2013

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Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

Applied surface science, 2015-11, Vol.355, p.59-63

2015

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Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing

Applied physics letters, 2012-06, Vol.100 (26)

2012

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Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Different Nitrogen Flows

Frontiers in materials, 2020-06, Vol.7

2020

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Publisher's Note: “Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma” [Appl. Phys. Lett. 104 , 202101 (2014)]

Applied physics letters, 2014-06, Vol.104 (26)

2014

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Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma

Applied surface science, 2011-09, Vol.257 (23), p.10172-10176

2011

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Influence of Ar/H2 ratio on the characteristics of boron-doped nc-Si:H films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Surface & coatings technology, 2013-08, Vol.228, p.S412-S415

2013

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Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD

Journal of crystal growth, 2013-04, Vol.368, p.92-96

2013

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Effect of temperature on GaN films deposited on graphite substrates at low-temperature

Applied surface science, 2013-09, Vol.280, p.909-913

2013

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Synthesis of SiO2/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

Applied physics letters, 2013-11, Vol.103 (21)

2013

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Interface characteristic and performance optimization mechanism for HfOx-based RRAM devices

Applied surface science, 2025-01, Vol.680, Article 161291

2025

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Interface characteristic and performance optimization mechanism for HfO -based RRAM devices

Applied surface science, 2025-01, Vol.680, p.161291, Article 161291

2025

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Low-temperature ECR-PEMOCVD deposition of high-quality crystalline gallium nitride films: A comparative study of intermediate layers for growth on amorphous glass substrates

Materials science in semiconductor processing, 2014-10, Vol.26, p.182-186

2014

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Influence of Ar/H2 ratio on the characteristics of phosphorus-doped hydrogenated nanocrystalline silicon films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Thin solid films, 2012-10, Vol.521, p.181-184

2012

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High-quality ZnO nanorods grown on graphite substrates by chemical solution method

Applied physics. A, Materials science & processing, 2013-06, Vol.111 (4), p.1071-1076

2013

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Dielectric Properties and Carrier Transport Mechanism in Annealed HfO x ‐Based Resistive Random Access Memory Devices

Physica status solidi. A, Applications and materials science, 2024-05, Vol.221 (10)

2024

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Deposition and properties of highly C-oriented GaN films on diamond substrates

Applied physics. A, Materials science & processing, 2011-02, Vol.102 (2), p.353-358

2011

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Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress

Journal of physics. D, Applied physics, 2019-10, Vol.52 (40), p.405103

2019

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Deposition and characteristics of GaN films on Ni metal substrate by ECR-PEMOCVD

Journal of materials science. Materials in electronics, 2013-12, Vol.24 (12), p.5069-5074

2013

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Passivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing

Applied surface science, 2016-02, Vol.364, p.769-774

2016

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Effects of experimental warming, precipitation increase and their interaction on AM fungal community in an alpine grassland of the Qinghai-Tibetan Plateau

European journal of soil biology, 2021-01, Vol.102, p.103272, Article 103272

2021

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The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface

Applied surface science, 2022-04, Vol.582, p.152461, Article 152461

2022

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Effect of buffer layer on the structural and morphological properties of GaN films grown with ECR-PEMOCVD

Diamond and related materials, 2012, Vol.21, p.88-91

2012

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Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors

Effects of surface properties on barrier height and barrier inhomogeneities of platinum contacts to n-type 4H-SiC

Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma

Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing

Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Different Nitrogen Flows

Publisher's Note: “Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma” [Appl. Phys. Lett. 104 , 202101 (2014)]

Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma

Influence of Ar/H2 ratio on the characteristics of boron-doped nc-Si:H films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD

Effect of temperature on GaN films deposited on graphite substrates at low-temperature

Synthesis of SiO2/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

Interface characteristic and performance optimization mechanism for HfOx-based RRAM devices

Interface characteristic and performance optimization mechanism for HfO -based RRAM devices

Low-temperature ECR-PEMOCVD deposition of high-quality crystalline gallium nitride films: A comparative study of intermediate layers for growth on amorphous glass substrates

Influence of Ar/H2 ratio on the characteristics of phosphorus-doped hydrogenated nanocrystalline silicon films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition

High-quality ZnO nanorods grown on graphite substrates by chemical solution method

Dielectric Properties and Carrier Transport Mechanism in Annealed HfO x ‐Based Resistive Random Access Memory Devices

Deposition and properties of highly C-oriented GaN films on diamond substrates

Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress

Deposition and characteristics of GaN films on Ni metal substrate by ECR-PEMOCVD

Passivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing

Effects of experimental warming, precipitation increase and their interaction on AM fungal community in an alpine grassland of the Qinghai-Tibetan Plateau

The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface

Effect of buffer layer on the structural and morphological properties of GaN films grown with ECR-PEMOCVD

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