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A 0.0043-mm 2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R- RC Network

IEEE transactions on very large scale integration (VLSI) systems, 2023-08, Vol.31 (8), p.1248-1252

2023

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A 0.0043-mm2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R-RC Network

IEEE transactions on very large scale integration (VLSI) systems, 2023-08, Vol.31 (8), p.1248-1252

2023

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IEEE_Xplore

0-1 Integer Programming Based on DNA Tetrahedral Probe

Computational Intelligence and Intelligent Systems, p.91-100

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0‐1 Knapsack problem driven resource scheduling in caching‐enabled network: A case study on sports video

Internet technology letters, 2021-09, Vol.4 (5), p.n/a

Xu, Qiang

2021

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A 0.1 THz low-loss 3D printed hollow waveguide

Optik (Stuttgart), 2019-01, Vol.176, p.611-616

2019

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A 0.18 μm CMOS single-inductor single-stage quadrature frontend for GNSS receiver

Journal of semiconductors, 2011-09, Vol.32 (9), p.095005-1-7

2011

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A 0.25V 97.8fJ/c.-s. 86.5dB SNDR SC ΔΣ modulator in 0.13µm CMOS

2013 IEEE 56th International Midwest Symposium on Circuits and Systems (MWSCAS), 2013, p.261-264

2013

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IEEE_Xplore

0.2GHz–3GHz UWB antenna with two narrow-band suppression

2015 IEEE International Conference on Communication Problem-Solving (ICCP), 2015, p.440-442

2015

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0.36BiScO 3 –0.64PbTiO 3 /Epoxy 1–3 Composite for Ultrasonic Transducer Applications

IEEE sensors journal, 2018-07, Vol.18 (14), p.5685-5690

2018

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0.36BiScO^sub 3^-0.64PbTiO^sub 3^ piezoelectric ceramics for high temperature ultrasonic transducer applications

Journal of alloys and compounds, 2018-04, Vol.743, p.365

2018

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0.36BiScO3-0.64PbTiO3/Epoxy 1-3 Composite for Ultrasonic Transducer Applications

IEEE sensors journal, 2018-07, Vol.18 (14), p.5685-5690

2018

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IEEE_Xplore

0.36BiScO3-0.64PbTiO3 piezoelectric ceramics for high temperature ultrasonic transducer applications

Journal of alloys and compounds, 2018-04, Vol.743, p.365-371

2018

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A 0.4-V [Formula Omitted]–[Formula Omitted] Proportional-Integrator-Based Continuous-Time [Formula Omitted] Modulator With 50-kHz BW and 74.4-dB SNDR

IEEE journal of solid-state circuits, 2018-01, Vol.53 (11), p.3256

2018

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A 0.4-V G - C Proportional-Integrator-Based Continuous-Time \Delta\Sigma Modulator With 50-kHz BW and 74.4-dB SNDR

IEEE journal of solid-state circuits, 2018-11, Vol.53 (11), p.3256-3267

2018

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IEEE_Xplore

A 0.45V 687pW low noise amplifier front-end with 1.73 NEF for energy-scavenging IoT sensors

2016 IEEE MTT-S International Wireless Symposium (IWS), 2016, p.1-4

2016

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A 0.4V 430nA quiescent current NMOS digital LDO with NAND-based analog-assisted loop in 28nm CMOS

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.306-308

2018

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IEEE_Xplore

A 0.5-1.1-V Adaptive Bypassing SAR ADC Utilizing the Oscillation-Cycle Information of a VCO-Based Comparator

IEEE journal of solid-state circuits, 2019-04, Vol.54 (4), p.968-977

2019

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IEEE_Xplore

A 0.5-1.1V 10B Adaptive Bypassing SAR ADC Utilizing Oscillation Cycle Information of VCO-Based Comparator

2018 IEEE Symposium on VLSI Circuits, 2018, p.93-94

2018

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IEEE_Xplore

A 0.5-11 GHz CMOS Low Noise Amplifier Using Dual-Channel Shunt Technique

IEEE microwave and wireless components letters, 2010-05, Vol.20 (5), p.280-282

2010

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IEEE_Xplore

In 0.53 Ga 0.47 As MOS‐HEMTs on GaAs and Si substrates grown by MOCVD

Physica status solidi. A, Applications and materials science, 2012-07, Vol.209 (7), p.1380-1383

2012

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A 0.5V rate-resolution scalable SAR ADC with 63.7dB SFDR

2013 IEEE International Symposium on Circuits and Systems (ISCAS), 2013, p.2030-2033

2013

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IEEE_Xplore

A 0.5V Voltage Reference Using Simple Common-Source Amplifier With Improved Gain

IEEE transactions on circuits and systems. II, Express briefs, 2024-06, p.1-1

2024

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IEEE_Xplore

A 0.69-Noise-Efficiency-Factor 4 x-Current-Reuse Dynamic Comparator with A Stacking FIA

2023 IEEE Custom Integrated Circuits Conference (CICC), 2023, p.1-2

2023

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IEEE_Xplore

A 0.8-V Supply, 1.58% 3σ-Accuracy, 1.9-μW Bandgap Reference in 0.13-μm CMOS

IEEE transactions on circuits and systems. II, Express briefs, 2024-04, Vol.71 (4), p.1884-1888

2024

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IEEE_Xplore

A 0.9 V high‐speed dynamic bias latch‐type comparator employing a voltage‐controlled delay line

Electronics letters, 2024-03, Vol.60 (5), p.n/a

2024

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A 0.0043-mm 2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R- RC Network

A 0.0043-mm2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R-RC Network

0-1 Integer Programming Based on DNA Tetrahedral Probe

0‐1 Knapsack problem driven resource scheduling in caching‐enabled network: A case study on sports video

A 0.1 THz low-loss 3D printed hollow waveguide

A 0.18 μm CMOS single-inductor single-stage quadrature frontend for GNSS receiver

A 0.25V 97.8fJ/c.-s. 86.5dB SNDR SC ΔΣ modulator in 0.13µm CMOS

0.2GHz–3GHz UWB antenna with two narrow-band suppression

0.36BiScO 3 –0.64PbTiO 3 /Epoxy 1–3 Composite for Ultrasonic Transducer Applications

0.36BiScO^sub 3^-0.64PbTiO^sub 3^ piezoelectric ceramics for high temperature ultrasonic transducer applications

0.36BiScO3-0.64PbTiO3/Epoxy 1-3 Composite for Ultrasonic Transducer Applications

0.36BiScO3-0.64PbTiO3 piezoelectric ceramics for high temperature ultrasonic transducer applications

A 0.4-V [Formula Omitted]–[Formula Omitted] Proportional-Integrator-Based Continuous-Time [Formula Omitted] Modulator With 50-kHz BW and 74.4-dB SNDR

A 0.4-V G - C Proportional-Integrator-Based Continuous-Time \Delta\Sigma Modulator With 50-kHz BW and 74.4-dB SNDR

A 0.45V 687pW low noise amplifier front-end with 1.73 NEF for energy-scavenging IoT sensors

A 0.4V 430nA quiescent current NMOS digital LDO with NAND-based analog-assisted loop in 28nm CMOS

A 0.5-1.1-V Adaptive Bypassing SAR ADC Utilizing the Oscillation-Cycle Information of a VCO-Based Comparator

A 0.5-1.1V 10B Adaptive Bypassing SAR ADC Utilizing Oscillation Cycle Information of VCO-Based Comparator

A 0.5-11 GHz CMOS Low Noise Amplifier Using Dual-Channel Shunt Technique

In 0.53 Ga 0.47 As MOS‐HEMTs on GaAs and Si substrates grown by MOCVD

A 0.5V rate-resolution scalable SAR ADC with 63.7dB SFDR

A 0.5V Voltage Reference Using Simple Common-Source Amplifier With Improved Gain

A 0.69-Noise-Efficiency-Factor 4 x-Current-Reuse Dynamic Comparator with A Stacking FIA

A 0.8-V Supply, 1.58% 3σ-Accuracy, 1.9-μW Bandgap Reference in 0.13-μm CMOS

A 0.9 V high‐speed dynamic bias latch‐type comparator employing a voltage‐controlled delay line

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