UB Paderborn / Katalog / Suche / in CDI

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-11, Vol.27 (6), p.2588-2592

2009

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FinFET performance advantage at 22nm: An AC perspective

2008 Symposium on VLSI Technology, 2008, p.12-13

2008

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IEEE_Xplore

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

IEEE electron device letters, 2013-06, Vol.34 (6), p.723-725

2013

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IEEE_Xplore

Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.12-13

2011

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IEEE_Xplore

Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

2013 IEEE International Electron Devices Meeting, 2013, p.20.2.1-20.2.4

2013

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IEEE_Xplore

Ultra low contact resistivities for CMOS beyond 10nm node

IEEE electron device letters, 2013, Vol.34, p.723

2013

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Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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IEEE_Xplore

SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013, p.227-230

2013

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IEEE_Xplore

The Influence of Nitrogen Doping on the Chemical and Local Bonding Environment of Amorphous and Crystalline Ge2Sb2Te5

MRS proceedings, 2009, Vol.1160 (1)

2009

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Development and characterization of advanced process technologies for the fabrication of crystalline-Si solar cells

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.003559-003564

2010

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IEEE_Xplore

Effective Schottky Barrier lowering for contact resistivity reduction using silicides as diffusion sources

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010, p.154-155

2010

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IEEE_Xplore

A 0.021 µm2 trigate SRAM cell with aggressively scaled gate and contact pitch

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.64-65

2011

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IEEE_Xplore

Thermal oxidation-induced strain in silicon nanobeams

17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest, 2004, p.189-192

2004

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IEEE_Xplore

CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.9.4.1-9.4.4

2016

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IEEE_Xplore

Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm2

2017 IEEE International Interconnect Technology Conference (IITC), 2017, p.1-3

2017

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IEEE_Xplore

Trigate 6T SRAM scaling to 0.06 µm2

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-3

2009

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IEEE_Xplore

Thin film deposition research and its impact on microelectronics scaling

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020-07, Vol.38 (4)

2020

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The demographic consequences of fertility reduction in rats and voles

Journal of pest science, 2023-06, Vol.96 (3), p.1313-1329

2023

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COMPROMISED FERTILITY IN FREE FEEDING OF WILD-CAUGHT NORWAY RATS (RATTUS NORVEGICUS) WITH A LIQUID BAIT CONTAINING 4-VINYLCYCLOHEXENE DIEPOXIDE AND TRIPTOLIDE

Journal of zoo and wildlife medicine, 2017-03, Vol.48 (1), p.80

2017

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The opportunity for sexual selection and the evolution of non-responsiveness to pesticides, sterility inducers and contraceptives

Heliyon, 2018-11, Vol.4 (11), p.e00943-e00943, Article e00943

2018

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Growth Kinetics of Extremely Halophilic Archaea (Family Halobacteriaceae) as Revealed by Arrhenius Plots

Journal of Bacteriology, 2005-02, Vol.187 (3), p.923-929

2005

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Tunable electrical properties of TaNx thin films grown by ionized physical vapor deposition

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2014-09, Vol.32 (5)

2014

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Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

Resistivity of copper interconnects beyond the 7 nm node

Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping

FinFET performance advantage at 22nm: An AC perspective

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node

Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

Ultra low contact resistivities for CMOS beyond 10nm node

Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths

SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

The Influence of Nitrogen Doping on the Chemical and Local Bonding Environment of Amorphous and Crystalline Ge2Sb2Te5

Development and characterization of advanced process technologies for the fabrication of crystalline-Si solar cells

Effective Schottky Barrier lowering for contact resistivity reduction using silicides as diffusion sources

A 0.021 µm2 trigate SRAM cell with aggressively scaled gate and contact pitch

Thermal oxidation-induced strain in silicon nanobeams

CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond

Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm2

Trigate 6T SRAM scaling to 0.06 µm2

Thin film deposition research and its impact on microelectronics scaling

The demographic consequences of fertility reduction in rats and voles

COMPROMISED FERTILITY IN FREE FEEDING OF WILD-CAUGHT NORWAY RATS (RATTUS NORVEGICUS) WITH A LIQUID BAIT CONTAINING 4-VINYLCYCLOHEXENE DIEPOXIDE AND TRIPTOLIDE

The opportunity for sexual selection and the evolution of non-responsiveness to pesticides, sterility inducers and contraceptives

Growth Kinetics of Extremely Halophilic Archaea (Family Halobacteriaceae) as Revealed by Arrhenius Plots

Tunable electrical properties of TaNx thin films grown by ionized physical vapor deposition

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