UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Room temperature operation of InGaAs∕InGaAsP∕InP quantum dot lasers

Applied physics letters, 2004-10, Vol.85 (17), p.3675-3677

2004

Volltextzugriff (PDF)

Xeroderma pigmentosum treated with advanced phenol-based peeling solution

Journal of the European Academy of Dermatology and Venereology, 2008-07, Vol.22 (7), p.879-880

2008

Volltextzugriff (PDF)

Photoluminescence and lasing characteristics of InGaAs∕InGaAsP∕InP quantum dots

Journal of applied physics, 2004-11, Vol.96 (10), p.5766-5770

2004

Volltextzugriff (PDF)

Gain recovery in a quantum dot semiconductor optical amplifier and corresponding pattern effects in amplified optical signals at 1.5 μm

Optics express, 2012-03, Vol.20 (6), p.6215-6224

2012

Volltextzugriff (PDF)

High-speed wavelength conversion in quantum dot and quantum well semiconductor optical amplifiers

Applied physics letters, 2008-05, Vol.92 (21), p.211101-211101-3

2008

Volltextzugriff (PDF)

Continuous-wave operation of 1.5μm InGaAs∕InGaAsP∕InP quantum dot lasers at room temperature

Applied physics letters, 2005-08, Vol.87 (8)

2005

Volltextzugriff (PDF)

Electrically tunable slow and fast lights in a quantum-dot semiconductor optical amplifier near 155 μm

Optics letters, 2007-10, Vol.32 (19), p.2894

2007

Volltextzugriff (PDF)

DLTS Study of InGaAs/InGaAsP Double-layered QDs with Various Spacer Layers

Journal of the Korean Physical Society, 2009, 55(3), , pp.1041-1045

2009

Volltextzugriff (PDF)

Multi-species measurements in 1-butanol pyrolysis behind reflected shock waves

Combustion and flame, 2012-11, Vol.159 (11), p.3242-3250

2012

Volltextzugriff (PDF)

Multi-species measurements in 2-butanol and i-butanol pyrolysis behind reflected shock waves

Combustion and flame, 2013-06, Vol.160 (6), p.1012-1019

2013

Volltextzugriff (PDF)

Red-shift and improvement of of photoluminescence characteristics by incorporation of nitrogen in In(Ga)As/GaAs quantum dots

Journal of the Korean Physical Society, 2003, 43(42), , pp.561-564

2003

Volltextzugriff (PDF)

Unambiguous observation of electronic couplings between InGaAs ∕ InGaAsP quantum dots emitting at 1.5 μ m

Applied physics letters, 2006-02, Vol.88 (9), p.091920-091920-3

2006

Volltextzugriff (PDF)

Shock tube/laser absorption studies of the decomposition of methyl formate

Proceedings of the Combustion Institute, 2013, Vol.34 (1), p.453-461

2013

Volltextzugriff (PDF)

Luminescence Characteristics of InGaAs/GaAs Quantum Dots Emitting Near 1.5 µm

Journal of the Korean Physical Society, 2010, 56(2), , pp.586-590

2010

Volltextzugriff (PDF)

Multi-species time-history measurements during n-hexadecane oxidation behind reflected shock waves

Proceedings of the Combustion Institute, 2013, Vol.34 (1), p.369-376

2013

Volltextzugriff (PDF)

Optical and lasing characteristics of 1.55 μm InGaAs/InGaAsP/InP quantum dots grown by MOCVD

2004

Volltextzugriff (PDF)

Gain dynamics of an InAs/InGaAsP quantum dot semiconductor optical amplifier operating at 1.5 μ m

Applied physics letters, 2011-01, Vol.98 (1), p.011107-011107-3

2011

Volltextzugriff (PDF)

Enhancement of Structural and Optical Properties of 1.3um InGaAs/GaAs Quantum Dots through the Growth of a Barrier at an Elevated Temperature

Journal of the Korean Physical Society, 2009, 54(2), , pp.725-728

2009

Volltextzugriff (PDF)

Shock tube/laser absorption studies of the decomposition of methyl formate

Proceedings of the Combustion Institute, 2013-01, Vol.34 (1)

2013

Volltextzugriff (PDF)

Luminescence Characteristics of InGaAs/GaAs Quantum Dots Emitting Near 1.5 um

Journal of the Korean Physical Society, 2010-02, Vol.56 (2), p.586-590

2010

Volltextzugriff (PDF)

An efficient in-plane energy level shift in InAs/InGaAsP/InP quantum dots by selective area growth

Journal of applied physics, 2010-02, Vol.107 (4), p.043522-043522-4

2010

Volltextzugriff (PDF)

Gain characteristics of InAs∕InGaAsP quantum dot semiconductor optical amplifiers at 1.5μm

Applied physics letters, 2007-06, Vol.90 (24)

2007

Volltextzugriff (PDF)

Enhancement of Structural and Optical Properties of 1.3 m InGaAs/GaAs Quantum Dots through the Growth of a Barrier at an Elevated Temperature

Journal of the Korean Physical Society, 2009-02, Vol.54 (2), p.725-728

2009

Volltextzugriff (PDF)

Long-Wavelength Emission at 1.5 m from InGaAs/GaAs Quantum Dots

Journal of the Korean Physical Society, 2007, 51(III), , pp.2010-2013

2007

Volltextzugriff (PDF)

Strong photoluminescence at 1.3μm with a narrow linewidth from nitridized InAs∕GaAs quantum dots

Applied physics letters, 2006-06, Vol.88 (23)

2006

Volltextzugriff (PDF)

1 – 25 von 155

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(121)
Mit Volltextzugriff
(144)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(99)
Physical Sciences
(50)
Life Sciences & Biomedicine
(38)
Technology
(31)
Physics
(28)
Exact Sciences And Technology
(26)
Animals
(20)
Engineering
(20)
Applied Sciences
(17)
Biological And Medical Sciences
(17)
Physics, Applied
(17)
Chemistry
(16)
Engineering, Electrical & Electronic
(14)
Fundamental And Applied Biological Sciences. Psychology
(12)
Cell Biology
(11)
Humans
(11)
Immunology
(11)
Rats
(10)
Male
(9)
Optics
(9)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Room temperature operation of InGaAs∕InGaAsP∕InP quantum dot lasers

Xeroderma pigmentosum treated with advanced phenol-based peeling solution

Photoluminescence and lasing characteristics of InGaAs∕InGaAsP∕InP quantum dots

Gain recovery in a quantum dot semiconductor optical amplifier and corresponding pattern effects in amplified optical signals at 1.5 μm

High-speed wavelength conversion in quantum dot and quantum well semiconductor optical amplifiers

Continuous-wave operation of 1.5μm InGaAs∕InGaAsP∕InP quantum dot lasers at room temperature

Electrically tunable slow and fast lights in a quantum-dot semiconductor optical amplifier near 155 μm

DLTS Study of InGaAs/InGaAsP Double-layered QDs with Various Spacer Layers

Multi-species measurements in 1-butanol pyrolysis behind reflected shock waves

Multi-species measurements in 2-butanol and i-butanol pyrolysis behind reflected shock waves

Red-shift and improvement of of photoluminescence characteristics by incorporation of nitrogen in In(Ga)As/GaAs quantum dots

Unambiguous observation of electronic couplings between InGaAs ∕ InGaAsP quantum dots emitting at 1.5 μ m

Shock tube/laser absorption studies of the decomposition of methyl formate

Luminescence Characteristics of InGaAs/GaAs Quantum Dots Emitting Near 1.5 µm

Multi-species time-history measurements during n-hexadecane oxidation behind reflected shock waves

Optical and lasing characteristics of 1.55 μm InGaAs/InGaAsP/InP quantum dots grown by MOCVD

Gain dynamics of an InAs/InGaAsP quantum dot semiconductor optical amplifier operating at 1.5 μ m

Enhancement of Structural and Optical Properties of 1.3um InGaAs/GaAs Quantum Dots through the Growth of a Barrier at an Elevated Temperature

Shock tube/laser absorption studies of the decomposition of methyl formate

Luminescence Characteristics of InGaAs/GaAs Quantum Dots Emitting Near 1.5 um

An efficient in-plane energy level shift in InAs/InGaAsP/InP quantum dots by selective area growth

Gain characteristics of InAs∕InGaAsP quantum dot semiconductor optical amplifiers at 1.5μm

Enhancement of Structural and Optical Properties of 1.3 m InGaAs/GaAs Quantum Dots through the Growth of a Barrier at an Elevated Temperature

Long-Wavelength Emission at 1.5 m from InGaAs/GaAs Quantum Dots

Strong photoluminescence at 1.3μm with a narrow linewidth from nitridized InAs∕GaAs quantum dots

Suchergebnisse filtern