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Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs

Semiconductors (Woodbury, N.Y.), 2024-03, Vol.58 (3), p.273-278

2024

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Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth

Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (14), p.1850-1853

2020

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Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2021-02, Vol.55 (2), p.194-201

2021

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High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser

Optics letters, 2015-06, Vol.40 (12), p.2707-2710

2015

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Structure and Optical Properties of a Composite AsSb–Al0.6Ga0.4As0.97Sb0.03 Metamaterial

Semiconductors (Woodbury, N.Y.), 2023-12, Vol.57 (13), p.615-620

2023

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GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

Semiconductors (Woodbury, N.Y.), 2019-09, Vol.53 (9), p.1143-1147

2019

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Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2023-09, Vol.57 (9), p.405-409

2023

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Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED

Surface science, 2018-11, Vol.677, p.306-315

2018

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Semiconductor quantum well based shutters for NIR laser mode-locking with ∼ GHz repetition rate

Journal of physics. Conference series, 2021-11, Vol.2067 (1), p.12017

2021

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Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1704-1707

2018

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Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

Surface science, 2018-06, Vol.672-673, p.23-32

2018

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Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates

Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (12), p.1548-1554

2020

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Optical shutters for a compact femtosecond Yb:KYW laser

Laser physics, 2020-02, Vol.30 (2), p.25001

2020

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Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.664-666

2018

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Proximity-induced superconductivity within the InAs/GaSb edge conducting state

Physical review. B, 2017-12, Vol.96 (24), Article 245304

2017

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Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12020

2016

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Curvature-tuned InAs-based shells containing two-dimensional electron gas

Journal of physics. D, Applied physics, 2011-09, Vol.44 (36), p.365104-1-4

2011

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Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications

Applied physics letters, 2015-09, Vol.107 (12)

2015

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Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures

Semiconductors (Woodbury, N.Y.), 2018-04, Vol.52 (4), p.468-472

2018

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Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures

Journal of applied physics, 2012-10, Vol.112 (8)

2012

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Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1484-1490

2018

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Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1119-1122

2020

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Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells

JETP letters, 2017-12, Vol.106 (11), p.727-732

2017

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A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates

Technical physics letters, 2020-02, Vol.46 (2), p.161-164

2020

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Formation of low-dimensional structures in the InSb/AlAs heterosystem

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1233-1239

2017

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Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs

Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth

Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser

Structure and Optical Properties of a Composite AsSb–Al0.6Ga0.4As0.97Sb0.03 Metamaterial

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy

Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED

Semiconductor quantum well based shutters for NIR laser mode-locking with ∼ GHz repetition rate

Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates

Optical shutters for a compact femtosecond Yb:KYW laser

Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

Proximity-induced superconductivity within the InAs/GaSb edge conducting state

Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

Curvature-tuned InAs-based shells containing two-dimensional electron gas

Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications

Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures

Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region

Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells

A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates

Formation of low-dimensional structures in the InSb/AlAs heterosystem

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