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Thermo-desorption measurements during N-doped Ge-rich Ge2Sb2Te5 crystallization

Nanotechnology, 2023-07, Vol.34 (28)

2023

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Thermo-desorption measurements during N-doped Ge-rich Ge2Sb2Te5crystallization

Nanotechnology, 2023-07, Vol.34 (28)

2023

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Crystallization behavior of N -doped Ge-rich GST thin films and nanostructures: An in-situ synchrotron X-ray diffraction study

Microelectronic engineering, 2021-05, Vol.244-246, p.111573, Article 111573

2021

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Kinetic Monte Carlo simulations of Ge–Sb–Te thin film crystallization

Nanotechnology, 2022-05, Vol.33 (29), p.295601

2022

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MgO monolayer epitaxy on Ni (100)

Applied physics letters, 2017-11, Vol.111 (21)

2017

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Spatially controlled positioning of coordination polymer nanoparticles onto heterogeneous nanostructured surfaces

Nanoscale, 2017-04, Vol.9 (16), p.5234-5243

2017

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Effect of Pd on the Ni2Si stress relaxation during the Ni-silicide formation at low temperature

Applied physics letters, 2012-09, Vol.101 (11)

2012

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Induced magnetic ordering in a molecular monolayer

Chemical physics letters, 2005-08, Vol.411 (1), p.214-220

2005

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First silicide formed by reaction of Ni(13%Pt) films with Si(1 0 0): Nature and kinetics by in-situ X-ray reflectivity and diffraction

Scripta materialia, 2010-07, Vol.63 (1), p.24-27

2010

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Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

Solid-state electronics, 2013-01, Vol.79, p.159-165

2013

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Progress in the understanding of Ni silicide formation for advanced MOS structures

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.152-165

2014

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Kinetics study of NiPt(10 at.%)/Si0.7Ge0.3 solid state reactions

Microelectronic engineering, 2014-05, Vol.120, p.163-167

2014

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In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization

Micro and Nano Engineering, 2018-11, Vol.1, p.63-67

2018

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A comparative study of nickel silicides and nickel germanides: Phase formation and kinetics

Microelectronic engineering, 2006-11, Vol.83 (11), p.2101-2106

2006

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Thermo-desorption measurements during N-doped Ge-rich Ge 2 Sb 2 Te 5 crystallization

Nanotechnology, 2023-07, Vol.34 (28), p.285702

2023

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Kinetic Monte Carlo simulations of Ge–Sb–Te thin film crystallization

Nanotechnology, 2022-05, Vol.33 (29)

2022

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Growth, stability and decomposition of Mg 2 Si ultra-thin films on Si (100)

Applied surface science, 2018-01, Vol.423 (Part B)

2018

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Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

Applied surface science, 2018-01, Vol.427, p.522-527

2018

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In situ study of the growth kinetics and interfacial roughness during the first stages of nickel–silicide formation

Microelectronic engineering, 2006-11, Vol.83 (11), p.2253-2257

2006

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Spatially controlled positioning of coordination polymer nanoparticles onto heterogeneous nanostructured surfacesElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr00024c

2017-04

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PA31 RELATIONSHIP BETWEEN CELIAC DISEASE AND ORAL PATHOLOGIES IN CHILDREN

Digestive and liver disease, 2009, Vol.41, p.S234-S234

2009

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Effect of Pd on the Ni(2)Si stress relaxation during the Ni-silicide formation at low temperature

Applied physics letters, 2012-09, Vol.101 (11)

2012

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Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems

Physica status solidi. A, Applications and materials science, 1999-01, Vol.171 (1), p.251-265

1999

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Kinetics study of NiPt(10 at.%)/Si sub(0.7)Ge sub(0.3) solid state reactions

Microelectronic engineering, 2014-05, Vol.120, p.163-167

2014

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Low misfit systems as tools for understanding dislocation relaxation mechanisms in semiconducting heteroepitaxial films

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.13255-13267

2002

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Thermo-desorption measurements during N-doped Ge-rich Ge2Sb2Te5 crystallization

Thermo-desorption measurements during N-doped Ge-rich Ge2Sb2Te5crystallization

Crystallization behavior of N -doped Ge-rich GST thin films and nanostructures: An in-situ synchrotron X-ray diffraction study

Kinetic Monte Carlo simulations of Ge–Sb–Te thin film crystallization

MgO monolayer epitaxy on Ni (100)

Spatially controlled positioning of coordination polymer nanoparticles onto heterogeneous nanostructured surfaces

Effect of Pd on the Ni2Si stress relaxation during the Ni-silicide formation at low temperature

Induced magnetic ordering in a molecular monolayer

First silicide formed by reaction of Ni(13%Pt) films with Si(1 0 0): Nature and kinetics by in-situ X-ray reflectivity and diffraction

Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

Progress in the understanding of Ni silicide formation for advanced MOS structures

Kinetics study of NiPt(10 at.%)/Si0.7Ge0.3 solid state reactions

In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization

A comparative study of nickel silicides and nickel germanides: Phase formation and kinetics

Thermo-desorption measurements during N-doped Ge-rich Ge 2 Sb 2 Te 5 crystallization

Kinetic Monte Carlo simulations of Ge–Sb–Te thin film crystallization

Growth, stability and decomposition of Mg 2 Si ultra-thin films on Si (100)

Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

In situ study of the growth kinetics and interfacial roughness during the first stages of nickel–silicide formation

Spatially controlled positioning of coordination polymer nanoparticles onto heterogeneous nanostructured surfacesElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr00024c

PA31 RELATIONSHIP BETWEEN CELIAC DISEASE AND ORAL PATHOLOGIES IN CHILDREN

Effect of Pd on the Ni(2)Si stress relaxation during the Ni-silicide formation at low temperature

Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems

Kinetics study of NiPt(10 at.%)/Si sub(0.7)Ge sub(0.3) solid state reactions

Low misfit systems as tools for understanding dislocation relaxation mechanisms in semiconducting heteroepitaxial films

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