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Sodium ion incorporated alumina - A versatile anisotropic ceramic

Journal of the European Ceramic Society, 2019-12, Vol.39 (15), p.4473-4486

2019

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Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

NPJ 2D materials and applications, 2021-04, Vol.5 (1), p.1-8, Article 46

2021

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Highly Linear and Stable Flexible Temperature Sensors Based on Laser‐Induced Carbonization of Polyimide Substrates for Personal Mobile Monitoring

Advanced materials technologies, 2020-07, Vol.5 (7), p.n/a

2020

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Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter

Advanced electronic materials, 2022-04, Vol.8 (4), p.n/a

2022

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Anticounterfeiting tags based on randomly oriented MoSx clusters enabled by capillary and Marangoni flow

Communications materials, 2023-12, Vol.4 (1), p.98-9, Article 98

2023

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Author Correction: Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

NPJ 2D materials and applications, 2021-05, Vol.5 (1), p.1-1, Article 58

2021

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High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

Nanomaterials (Basel, Switzerland), 2021-04, Vol.11 (5), p.1101

2021

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In Situ Synthesis of Two-Dimensional Lateral Semiconducting-Mo:Se//Metallic-Mo Junctions Using Controlled Diffusion of Se for High-Performance Large-Scaled Memristor

ACS nano, 2023-03, Vol.17 (5), p.4296-4305

2023

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Probing the Efficacy of Large-Scale Nonporous IGZO for Visible-to-NIR Detection Capability: An Approach toward High-Performance Image Sensor Circuitry

ACS nano, 2022-06, Vol.16 (6), p.9267-9277

2022

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Low‐Temperature Plasma‐Assisted Growth of Large‐Area MoS2 for Transparent Phototransistors

Advanced functional materials, 2022-10, Vol.32 (44), p.n/a

2022

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Combustion aided in situ consolidation of high strength porous ceramic structures with a minimum thermal budget

Materials letters, 2020-04, Vol.265, p.127410, Article 127410

2020

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Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf0.5Zr0.5O2

Advanced functional materials, 2021-10, Vol.31 (43), p.n/a

2021

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A balancing between super transparency and conductivity of solution combustion derived titanium doped indium oxide: Effect of charge carrier density and mobility

Thin solid films, 2018-08, Vol.660, p.267-275

2018

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Phases in HfO2‑Based Ferroelectric Thin Films and Their Integration in Low-Power Devices

ACS applied electronic materials, 2023-01, Vol.5 (1), p.11-20

2023

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High-performance low voltage operation of indium zinc tin oxide thin film transistors using chemically derived sodium β-alumina dielectric

Journal of materials science. Materials in electronics, 2019-05, Vol.30 (10), p.9097-9105

2019

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Facile in situ formation of high conductive Ag and CuxOy composite films: a role of aqueous spray combustion

Journal of materials science. Materials in electronics, 2019-02, Vol.30 (3), p.2888-2897

2019

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Correction to Probing the Efficacy of Large-Scale Nonporous IGZO for Visible-to-NIR Detection Capability: An Approach toward High-Performance Image Sensor Circuitry

ACS nano, 2022-10, Vol.16 (10), p.17478-17478

2022

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Low‐Temperature Plasma‐Assisted Growth of Large‐Area MoS 2 for Transparent Phototransistors

Advanced functional materials, 2022-10, Vol.32 (44)

2022

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Se-Vacancy Healing with Substitutional Oxygen in WSe2 for High-Mobility p‑Type Field-Effect Transistors

ACS nano, 2023-06, Vol.17 (12), p.11279-11289

2023

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Ferroelectric La-doped HfO2 deposited via chemical solution on silicon for tellurium field-effect phototransistors

Journal of alloys and compounds, 2023-12, Vol.968, p.172082, Article 172082

2023

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Phases in HfO 2 -Based Ferroelectric Thin Films and Their Integration in Low-Power Devices

ACS applied electronic materials, 2023-01, Vol.5 (1), p.11-20

2023

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An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO 2 Ferroelectrics for Negative Capacitance Field Effect Transistors

ACS nano, 2023-10, Vol.17 (19), p.19076-19086

2023

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Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf0.5Zr0.5O2 (Adv. Funct. Mater. 43/2021)

Advanced functional materials, 2021-10, Vol.31 (43), p.n/a

2021

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Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf 0.5 Zr 0.5 O 2

Advanced functional materials, 2021-10, Vol.31 (43)

2021

Volltextzugriff (PDF)

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf 0.5 Zr 0.5 O 2 (Adv. Funct. Mater. 43/2021)

Advanced functional materials, 2021-10, Vol.31 (43)

2021

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Sodium ion incorporated alumina - A versatile anisotropic ceramic

Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

Highly Linear and Stable Flexible Temperature Sensors Based on Laser‐Induced Carbonization of Polyimide Substrates for Personal Mobile Monitoring

Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter

Anticounterfeiting tags based on randomly oriented MoSx clusters enabled by capillary and Marangoni flow

Author Correction: Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

In Situ Synthesis of Two-Dimensional Lateral Semiconducting-Mo:Se//Metallic-Mo Junctions Using Controlled Diffusion of Se for High-Performance Large-Scaled Memristor

Probing the Efficacy of Large-Scale Nonporous IGZO for Visible-to-NIR Detection Capability: An Approach toward High-Performance Image Sensor Circuitry

Low‐Temperature Plasma‐Assisted Growth of Large‐Area MoS2 for Transparent Phototransistors

Combustion aided in situ consolidation of high strength porous ceramic structures with a minimum thermal budget

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf0.5Zr0.5O2

A balancing between super transparency and conductivity of solution combustion derived titanium doped indium oxide: Effect of charge carrier density and mobility

Phases in HfO2‑Based Ferroelectric Thin Films and Their Integration in Low-Power Devices

High-performance low voltage operation of indium zinc tin oxide thin film transistors using chemically derived sodium β-alumina dielectric

Facile in situ formation of high conductive Ag and CuxOy composite films: a role of aqueous spray combustion

Correction to Probing the Efficacy of Large-Scale Nonporous IGZO for Visible-to-NIR Detection Capability: An Approach toward High-Performance Image Sensor Circuitry

Low‐Temperature Plasma‐Assisted Growth of Large‐Area MoS 2 for Transparent Phototransistors

Se-Vacancy Healing with Substitutional Oxygen in WSe2 for High-Mobility p‑Type Field-Effect Transistors

Ferroelectric La-doped HfO2 deposited via chemical solution on silicon for tellurium field-effect phototransistors

Phases in HfO 2 -Based Ferroelectric Thin Films and Their Integration in Low-Power Devices

An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO 2 Ferroelectrics for Negative Capacitance Field Effect Transistors

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf0.5Zr0.5O2 (Adv. Funct. Mater. 43/2021)

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf 0.5 Zr 0.5 O 2

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf 0.5 Zr 0.5 O 2 (Adv. Funct. Mater. 43/2021)

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