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Shopping motivations on Internet: A study based on utilitarian and hedonic value

Technovation, 2007-12, Vol.27 (12), p.774-787

2007

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High-mobility pentacene organic thin-film transistors achieved by reducing remote phonon scattering and surface-roughness scattering

Applied surface science, 2021-04, Vol.544, p.148656, Article 148656

2021

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Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment

IEEE transactions on electron devices, 2019-10, Vol.66 (10), p.4337-4342

2019

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Effect of dopant redistribution in gate electrode on surface plasmon resonance in InGaZnO thin-film transistors

AIP advances, 2022-11, Vol.12 (11), p.115004-115004-5

2022

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Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1020-1025

2017

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Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric

IEEE electron device letters, 2020-03, Vol.41 (3), p.385-388

2020

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Exploring knowledge sharing in virtual communities

Online information review, 2013-01, Vol.37 (6), p.891-909

2013

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Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1535-1540

2017

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Tailoring the Band Alignment of GaxZn1‐xO/InGaZnO Heterojunction for Modulation‐Doped Transistor Applications

Physica status solidi. A, Applications and materials science, 2018-09, Vol.215 (18), p.n/a

2018

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Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

Applied physics letters, 2016-11, Vol.109 (19)

2016

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Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer

Applied physics letters, 2017-07, Vol.111 (5)

2017

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Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2179-2184

2017

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Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3528-3533

2017

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Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.742-746

2014

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Comprehensive investigation on CF4/O2-plasma treating the interfaces of stacked gate dielectric in MoS2 transistors

Applied surface science, 2021-03, Vol.542, p.148437, Article 148437

2021

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Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4888-4892

2016

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Anti-Screening Effect of Gate-Electrode Holes on Remote Phonon Scattering in InGaZnO Thin-Film Transistors

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.174-179

2022

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Enhanced screening on remote phonon scattering in InGaZnO thin-film transistor by using Ge gate electrode

Journal of applied physics, 2021-07, Vol.130 (1)

2021

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Influence of Gate Doping Concentration on the Characteristics of Amorphous InGaZnO Thin-Film Transistors With HfLaO Gate Dielectric

IEEE electron device letters, 2019-12, Vol.40 (12), p.1953-1956

2019

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Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal-Oxide- Semiconductor Capacitor With HfTiON Gate Dielectric

IEEE transactions on electron devices, 2015-04, Vol.62 (4), p.1235-1240

2015

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Improved subthreshold swing of MoS2 negative-capacitance transistor by fluorine-plasma treatment on ferroelectric Hf0.5Zr0.5O2 gate dielectric

Nanotechnology, 2021-05, Vol.32 (19), p.195202-195202

2021

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Damage-free mica/MoS2 interface for high-performance multilayer MoS2 field-effect transistors

Nanotechnology, 2019-08, Vol.30 (34), p.345204-345204

2019

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How knowledge management mediates the relationship between environment and organizational structure

Journal of business research, 2011-07, Vol.64 (7), p.728-736

2011

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Optimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors

Nanotechnology, 2020-03, Vol.31 (13), p.135206-135206

2020

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Gate Screening on Remote Phonon Scattering for Pentacene Organic TFTs: Holes Versus Electrons

IEEE electron device letters, 2019-06, Vol.40 (6), p.893-896

2019

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Shopping motivations on Internet: A study based on utilitarian and hedonic value

High-mobility pentacene organic thin-film transistors achieved by reducing remote phonon scattering and surface-roughness scattering

Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment

Effect of dopant redistribution in gate electrode on surface plasmon resonance in InGaZnO thin-film transistors

Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric

Exploring knowledge sharing in virtual communities

Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer

Tailoring the Band Alignment of GaxZn1‐xO/InGaZnO Heterojunction for Modulation‐Doped Transistor Applications

Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer

Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer

Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation

Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

Comprehensive investigation on CF4/O2-plasma treating the interfaces of stacked gate dielectric in MoS2 transistors

Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate

Anti-Screening Effect of Gate-Electrode Holes on Remote Phonon Scattering in InGaZnO Thin-Film Transistors

Enhanced screening on remote phonon scattering in InGaZnO thin-film transistor by using Ge gate electrode

Influence of Gate Doping Concentration on the Characteristics of Amorphous InGaZnO Thin-Film Transistors With HfLaO Gate Dielectric

Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal-Oxide- Semiconductor Capacitor With HfTiON Gate Dielectric

Improved subthreshold swing of MoS2 negative-capacitance transistor by fluorine-plasma treatment on ferroelectric Hf0.5Zr0.5O2 gate dielectric

Damage-free mica/MoS2 interface for high-performance multilayer MoS2 field-effect transistors

How knowledge management mediates the relationship between environment and organizational structure

Optimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors

Gate Screening on Remote Phonon Scattering for Pentacene Organic TFTs: Holes Versus Electrons

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