UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 40

Sortiert nach

Review of Recent Progress on Vertical GaN-Based PN Diodes

Nanoscale research letters, 2021-06, Vol.16 (1), p.101-101, Article 101

2021

Volltextzugriff (PDF)

Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1171-1175

2020

Volltextzugriff (PDF)

Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

IEEE electron device letters, 2020-04, Vol.41 (4), p.601-604

2020

Volltextzugriff (PDF)

p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

IEEE sensors journal, 2020-01, Vol.20 (1), p.62-66

2020

Volltextzugriff (PDF)

Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode

Chinese physics B, 2022-04, Vol.31 (5), p.57702-743

2022

Volltextzugriff (PDF)

Graphene quantum dot modified g-C3N4 for enhanced photocatalytic oxidation of ammonia performance

RSC advances, 2017-01, Vol.7 (81), p.51687-51694

2017

Volltextzugriff (PDF)

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Chinese physics B, 2022-11, Vol.31 (12), p.127701-594

2022

Volltextzugriff (PDF)

AlGaN/GaN Schottky Barrier Diodes on Free-Standing GaN Substrates With a Si Doped Barrier Layer

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.318-323

2022

Volltextzugriff (PDF)

Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current

Journal of crystal growth, 2023-06, Vol.611, p.127183, Article 127183

2023

Volltextzugriff (PDF)

Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

IEEE sensors journal, 2022-02, Vol.22 (3), p.1933-1938

2022

Volltextzugriff (PDF)

Application of p-type NiO deposited by magnetron reactive sputtering on GaN vertical diodes

Materials science in semiconductor processing, 2021-04, Vol.125, p.105628, Article 105628

2021

Volltextzugriff (PDF)

Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma Treatment

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1792-1797

2022

Volltextzugriff (PDF)

Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism

Journal of materials chemistry. A, Materials for energy and sustainability, 2018, Vol.6 (27), p.12956-12961

2018

Volltextzugriff (PDF)

Surface sensibility and stability of AlGaN/GaN ion-sensitive field-effect transistors with high Al-content AlGaN barrier layer

Applied surface science, 2021-12, Vol.570, p.151190, Article 151190

2021

Volltextzugriff (PDF)

Effect of Helium-Implanted Edge Termination on GaN-on-GaN Schottky Barrier Diode Temperature Sensors

IEEE sensors journal, 2023-12, Vol.23 (24), p.30112-30118

2023

Volltextzugriff (PDF)

Temperature sensor using thermally stable TiN anode GaN Schottky barrier diode for high power device application

Superlattices and microstructures, 2018-11, Vol.123, p.274-279

2018

Volltextzugriff (PDF)

Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

IEEE sensors journal, 2021-01, Vol.21 (2), p.1273-1278

2021

Volltextzugriff (PDF)

Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering

Applied surface science, 2018-12, Vol.462 (C), p.799-803

2018

Volltextzugriff (PDF)

Influence of metal-insulator-semiconductor gate structure on normally-off p-GaN heterojunction field-effect transistors

Journal of crystal growth, 2020-02, Vol.532, p.125395, Article 125395

2020

Volltextzugriff (PDF)

Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5162-5166

2021

Volltextzugriff (PDF)

A promising CuOx/WO3 p-n heterojunction thin-film photocathode fabricated by magnetron reactive sputtering

International journal of hydrogen energy, 2019-02, Vol.44 (8), p.4062-4071

2019

Volltextzugriff (PDF)

Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

IEEE electron device letters, 2019-02, Vol.40 (2), p.185-188

2019

Volltextzugriff (PDF)

Gate structure dependent normally-off AlGaN/GaN heterostructure field-effect transistors with p-GaN cap layer

Journal of physics. D, Applied physics, 2020-10, Vol.53 (41), p.415104

2020

Volltextzugriff (PDF)

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4859-4863

2022

Volltextzugriff (PDF)

Transparent ohmic contact for boron doped diamond using p-type NiO film synthesized through oxidation

Materials science in semiconductor processing, 2020-01, Vol.105, p.104740, Article 104740

2020

Volltextzugriff (PDF)

1 – 25 von 40

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(32)
Mit Volltextzugriff
(36)

Publikationsform

Artikel
(36)
Tagungsberichte
(4)

Sprache

Englisch
(39)
Japanisch
(5)

Erscheinungsjahr

n.n

Thema

Science & Technology
(30)
Physical Sciences
(27)
Physics
(23)
Technology
(22)
Physics, Applied
(17)
Gallium Nitrides
(14)
Schottky Barrier Diode
(14)
Engineering
(13)
Engineering, Electrical & Electronic
(13)
Schottky Diodes
(12)
Anodes
(10)
Gallium Nitride
(10)
Materials Science
(9)
Gan
(8)
Physics, Condensed Matter
(8)
Temperature Sensor
(8)
Materials Science, Multidisciplinary
(7)
Sensitivity
(7)
Temperature Dependence
(7)
Temperature Sensors
(7)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

2 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Review of Recent Progress on Vertical GaN-Based PN Diodes

Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode

Graphene quantum dot modified g-C3N4 for enhanced photocatalytic oxidation of ammonia performance

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

AlGaN/GaN Schottky Barrier Diodes on Free-Standing GaN Substrates With a Si Doped Barrier Layer

Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current

Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

Application of p-type NiO deposited by magnetron reactive sputtering on GaN vertical diodes

Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma Treatment

Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism

Surface sensibility and stability of AlGaN/GaN ion-sensitive field-effect transistors with high Al-content AlGaN barrier layer

Effect of Helium-Implanted Edge Termination on GaN-on-GaN Schottky Barrier Diode Temperature Sensors

Temperature sensor using thermally stable TiN anode GaN Schottky barrier diode for high power device application

Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering

Influence of metal-insulator-semiconductor gate structure on normally-off p-GaN heterojunction field-effect transistors

Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

A promising CuOx/WO3 p-n heterojunction thin-film photocathode fabricated by magnetron reactive sputtering

Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

Gate structure dependent normally-off AlGaN/GaN heterostructure field-effect transistors with p-GaN cap layer

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Transparent ohmic contact for boron doped diamond using p-type NiO film synthesized through oxidation

Suchergebnisse filtern