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The 2020 photovoltaic technologies roadmap

Journal of physics. D, Applied physics, 2020-12, Vol.53 (49), p.493001

2020

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Multijunction Ga0.5In0.5P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy

Progress in photovoltaics, 2018-11, Vol.26 (11), p.887-893

2018

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High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

Applied physics letters, 2018-01, Vol.112 (4)

2018

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III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

Crystals (Basel), 2019-01, Vol.9 (1), p.3

2019

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GaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas

Applied physics letters, 2020-05, Vol.116 (18)

2020

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AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

Progress in photovoltaics, 2023-03, Vol.31 (3), p.230-236

2023

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Light-trapping structures fabricated in situ for ultrathin III-V solar cells

Journal of applied physics, 2023-10, Vol.134 (13)

2023

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Publisher’s Note: “Light-trapping structures fabricated in situ for ultrathin III-V solar cells” [J. Appl. Phys. 134, 135307 (2023)]

Journal of applied physics, 2023-10, Vol.134 (16)

2023

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Patterning Metal Grids for GaAs Solar Cells with Cracked Film Lithography: Quantifying the Cost/Performance Tradeoff

ACS applied materials & interfaces, 2020-09, Vol.12 (37), p.41471-41476

2020

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Uniformity of GaAs solar cells grown in a kinetically-limited regime by dynamic hydride vapor phase epitaxy

Solar energy materials and solar cells, 2019-08, Vol.197 (C), p.84-92

2019

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High‐Efficiency Solar Cells Grown on Spalled Germanium for Substrate Reuse without Polishing

Advanced energy materials, 2022-08, Vol.12 (29), p.n/a

2022

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Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

Crystal growth & design, 2021-07, Vol.21 (7), p.3916-3921

2021

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Molecular beam epitaxy of GaAs templates on water soluble NaCl thin films

Journal of crystal growth, 2022-05, Vol.586, p.126617, Article 126617

2022

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GaAs solar cells grown on intentionally contaminated GaAs substrates

Journal of crystal growth, 2020-07, Vol.541, p.125668, Article 125668

2020

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Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

Applied physics letters, 2021-08, Vol.119 (9)

2021

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Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

Nature communications, 2019-09, Vol.10 (1), p.4070-1, Article 4070

2019

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Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

Nature communications, 2019-07, Vol.10 (1), p.3361-8, Article 3361

2019

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Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Journal of applied physics, 2021-09, Vol.130 (11)

2021

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24% Single‐Junction GaAs Solar Cell Grown Directly on Growth‐Planarized Facets Using Hydride Vapor Phase Epitaxy

Advanced energy materials, 2024-01, Vol.14 (3), p.n/a

2024

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Controlled exfoliation of (100) GaAs-based devices by spalling fracture

Applied physics letters, 2016-01, Vol.108 (1)

2016

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Compositionally graded Ga1−xInxP buffers grown by static and dynamic hydride vapor phase epitaxy at rates up to 1 μm/min

Applied physics letters, 2021-02, Vol.118 (5)

2021

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Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP

Journal of applied physics, 2020-07, Vol.128 (2)

2020

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In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III–V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants

Crystal growth & design, 2024-04, Vol.24 (8), p.3218-3227

2024

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Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy

IEEE journal of photovoltaics, 2017-01, Vol.7 (1), p.157-161

2017

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GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers

IEEE journal of photovoltaics, 2016-01, Vol.6 (1), p.191-195

2016

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The 2020 photovoltaic technologies roadmap

Multijunction Ga0.5In0.5P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy

High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

GaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas

AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

Light-trapping structures fabricated in situ for ultrathin III-V solar cells

Publisher’s Note: “Light-trapping structures fabricated in situ for ultrathin III-V solar cells” [J. Appl. Phys. 134, 135307 (2023)]

Patterning Metal Grids for GaAs Solar Cells with Cracked Film Lithography: Quantifying the Cost/Performance Tradeoff

Uniformity of GaAs solar cells grown in a kinetically-limited regime by dynamic hydride vapor phase epitaxy

High‐Efficiency Solar Cells Grown on Spalled Germanium for Substrate Reuse without Polishing

Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

Molecular beam epitaxy of GaAs templates on water soluble NaCl thin films

GaAs solar cells grown on intentionally contaminated GaAs substrates

Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

24% Single‐Junction GaAs Solar Cell Grown Directly on Growth‐Planarized Facets Using Hydride Vapor Phase Epitaxy

Controlled exfoliation of (100) GaAs-based devices by spalling fracture

Compositionally graded Ga1−xInxP buffers grown by static and dynamic hydride vapor phase epitaxy at rates up to 1 μm/min

Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP

In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III–V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants

Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy

GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers

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