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Low frequency noise and trap density in GaN/AlGaN field effect transistors

Applied physics letters, 2019-10, Vol.115 (18)

2019

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Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN

Applied physics letters, 2023-11, Vol.123 (22)

2023

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Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN

AIP advances, 2024-07, Vol.14 (7), p.075312-075312-10

2024

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Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors

Applied physics letters, 2022-11, Vol.121 (21)

2022

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FeGa (0/−) acceptor level as a reference energy level in dilute AlxGa1−xN

Applied physics letters, 2024-06, Vol.124 (23)

2024

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The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

Journal of applied physics, 2024-05, Vol.135 (17)

2024

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Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals

Journal of applied physics, 2024-05, Vol.135 (19)

2024

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AlGaN/GaN HEMT structures on ammono bulk GaN substrate

Semiconductor science and technology, 2014-07, Vol.29 (7), p.75004

2014

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Electrically driven terahertz radiation of 2DEG plasmons in AlGaN/GaN structures at 110 K temperature

Applied physics letters, 2017-05, Vol.110 (20)

2017

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AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Journal of applied physics, 2010, Vol.107 (2), p.024504-024504-4

2010

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Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

Journal of applied physics, 2011-12, Vol.110 (12), p.123703-123703-7

2011

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AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

Semiconductor science and technology, 2019-02, Vol.34 (2), p.24002

2019

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Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Applied physics letters, 2012-04, Vol.100 (18), p.181603-181603-4

2012

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Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting

Physical review. B, 2021-07, Vol.104 (4), p.1, Article 045301

2021

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Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

Journal of crystal growth, 2011-03, Vol.318 (1), p.496-499

2011

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Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

Applied physics letters, 2006-05, Vol.88 (20), p.201111-201111-3

2006

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Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, p.90-93

2019

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The Radial Effect for E1 and E3 Deep Traps Concentration in n-GaN Layers

Acta physica Polonica, A, 2022-11, Vol.142 (5), p.611-614

2022

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A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

Applied physics letters, 2004-02, Vol.84 (8), p.1236-1238

2004

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Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN

Applied physics letters, 2005-07, Vol.87 (4)

2005

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GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates

Applied physics letters, 2000-06, Vol.76 (25), p.3807-3809

2000

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Strain-compensated AlGaN∕GaN∕InGaN cladding layers in homoepitaxial nitride devices

Applied physics letters, 2007-12, Vol.91 (23)

2007

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Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

Applied physics letters, 2002-02, Vol.80 (7), p.1228-1230

2002

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Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Applied physics letters, 2006-02, Vol.88 (7), p.071121-071121-3

2006

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Hierarchically porous GaN thin films fabricated using high fluence Ar ion implantation of epitaxial GaN on sapphire

Thin solid films, 2022-09, Vol.758, p.139429, Article 139429

2022

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Low frequency noise and trap density in GaN/AlGaN field effect transistors

Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN

Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN

Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors

FeGa (0/−) acceptor level as a reference energy level in dilute AlxGa1−xN

The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

Electrically driven terahertz radiation of 2DEG plasmons in AlGaN/GaN structures at 110 K temperature

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting

Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation

The Radial Effect for E1 and E3 Deep Traps Concentration in n-GaN Layers

A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN

GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates

Strain-compensated AlGaN∕GaN∕InGaN cladding layers in homoepitaxial nitride devices

Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Hierarchically porous GaN thin films fabricated using high fluence Ar ion implantation of epitaxial GaN on sapphire

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