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Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers

Semiconductors (Woodbury, N.Y.), 2021-09, Vol.55 (9), p.705-709

2021

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Nonlinearity of Volt–Ampere Characteristics of Homogeneous Compensated Detector GaAs Structures

Technical physics letters, 2019-06, Vol.45 (6), p.566-569

2019

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Radiopulse generation in dispersive nonlinear transmission lines with GaAs S-diodes

Journal of physics. Conference series, 2021-11, Vol.2094 (2), p.22065

2021

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Manufacturing and Properties of Ferromagnetic Aluminum Nitride Doped with Nonmagnetic Impurities

Russian physics journal, 2022-10, Vol.65 (6), p.909-923

2022

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Formation of Dislocations in the Process of Impurity Diffusion in GaAs

Russian physics journal, 2022-04, Vol.64 (12), p.2350-2356

2022

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Aluminum Nitride Doped with Transition Metal Group Atoms as a Material for Spintronics

Russian physics journal, 2021-03, Vol.63 (11), p.2013-2024

2021

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The influence of the deep level type on a switching time delay of GaAs avalanche S-diodes

Journal of physics. Conference series, 2018-12, Vol.1124 (7), p.71013

2018

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Resonant tunneling of charge carriers in InGaN/GaN superlattice

Journal of physics. Conference series, 2017-06, Vol.864 (1), p.12052

2017

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Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs

Technical physics letters, 2018-06, Vol.44 (6), p.465-468

2018

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Photoelectrical characteristics of TiO2-N-SI heterostructures

Microwave and optical technology letters, 2016-05, Vol.58 (5), p.1113-1116

2016

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Electrical, Structural, and Magnetic Properties of Gallium Arsenide Doped with Iron

Russian physics journal, 2018-07, Vol.61 (3), p.491-497

2018

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Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells

Russian physics journal, 2018-06, Vol.61 (2), p.211-215

2018

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Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN

Russian physics journal, 2018-05, Vol.61 (1), p.187-190

2018

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Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties

Russian physics journal, 2018-04, Vol.60 (12), p.2177-2185

2018

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On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.232-238

2017

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Luminescence of Ga2O3 Crystals Excited with a Runaway Electron Beam

Optics and spectroscopy, 2017-12, Vol.123 (6), p.867-870

2017

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Comparative analysis of efficiency droop in InGaN/GaN light- emitting diodes for electrical and optical pumping conditions

Journal of physics. Conference series, 2014-01, Vol.541 (1), p.12055-4

2014

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Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering

Russian physics journal, 2018-03, Vol.60 (11), p.1911-1916

2018

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Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1156-1162

2016

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Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide

Russian physics journal, 2016-10, Vol.59 (6), p.757-761

2016

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Photoelectrical characteristics of Ga2O3-GaAs structures

Journal of physics. Conference series, 2014, Vol.541 (1)

2014

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Study of electric field distribution in AlGalnP light-emitting diode by Kelvin probe force microscopy

Journal of physics. Conference series, 2014-10, Vol.541 (1), p.12057

2014

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Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

Semiconductors (Woodbury, N.Y.), 2013-10, Vol.47 (10), p.1382-1386

2013

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A Solid-State Sub-Nanosecond Microwave Switch

Russian physics journal, 2016-12, Vol.59 (8), p.1187-1191

2016

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Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping

Russian physics journal, 2016-11, Vol.59 (7), p.934-937

2016

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Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers

Nonlinearity of Volt–Ampere Characteristics of Homogeneous Compensated Detector GaAs Structures

Radiopulse generation in dispersive nonlinear transmission lines with GaAs S-diodes

Manufacturing and Properties of Ferromagnetic Aluminum Nitride Doped with Nonmagnetic Impurities

Formation of Dislocations in the Process of Impurity Diffusion in GaAs

Aluminum Nitride Doped with Transition Metal Group Atoms as a Material for Spintronics

The influence of the deep level type on a switching time delay of GaAs avalanche S-diodes

Resonant tunneling of charge carriers in InGaN/GaN superlattice

Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs

Photoelectrical characteristics of TiO2-N-SI heterostructures

Electrical, Structural, and Magnetic Properties of Gallium Arsenide Doped with Iron

Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells

Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN

Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties

On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

Luminescence of Ga2O3 Crystals Excited with a Runaway Electron Beam

Comparative analysis of efficiency droop in InGaN/GaN light- emitting diodes for electrical and optical pumping conditions

Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering

Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures

Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide

Photoelectrical characteristics of Ga2O3-GaAs structures

Study of electric field distribution in AlGalnP light-emitting diode by Kelvin probe force microscopy

Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

A Solid-State Sub-Nanosecond Microwave Switch

Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping

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