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The effect of dimples geometry in the sliding surface on the tribological properties under starved lubrication conditions

Tribology international, 2016-07, Vol.99, p.77-84

2016

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Structural and optical properties of pulsed-laser deposited crystalline β-Ga2O3 thin films on silicon

Semiconductor science and technology, 2019-03, Vol.34 (3)

2019

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Soft X-ray absorption study of sputtered tin oxide films

Journal of alloys and compounds, 2022-05, Vol.902, p.163768, Article 163768

2022

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Charge transport in n-type As- and Sb-hyperdoped Ge

Applied physics letters, 2024-04, Vol.124 (14)

2024

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The photoluminescence response to structural changes of Yb implanted ZnO crystals subjected to non-equilibrium processing

Journal of applied physics, 2017-02, Vol.121 (7)

2017

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Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

Journal of applied physics, 2019-05, Vol.125 (20)

2019

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Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting

Journal of physics. Condensed matter, 2023-02, Vol.35 (5), p.55302

2023

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An infrared transmission study of Ge:Mn thick films prepared by ion implantation and post-annealing

Journal of applied physics, 2020-03, Vol.127 (10)

2020

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Engineering of optical and electrical properties of ZnO by non-equilibrium thermal processing: The role of zinc interstitials and zinc vacancies

Journal of applied physics, 2017-07, Vol.122 (3)

2017

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Impact of Self-Trapped Excitons on Blue Photoluminescence in TiO2 Nanorods on Chemically Etched Si Pyramids

Journal of physical chemistry. C, 2017-06, Vol.121 (21), p.11448-11454

2017

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Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

Scientific reports, 2015-02, Vol.5 (1), p.8329-8329, Article 8329

2015

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B20-type FeGe on Ge(100) prepared by pulsed laser melting

Journal of magnetism and magnetic materials, 2021-08, Vol.532, p.167981, Article 167981

2021

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Suppressing the cellular breakdown in silicon supersaturated with titanium

Journal of physics. D, Applied physics, 2016-06, Vol.49 (24), p.245104

2016

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Formation and photoluminescence of GaAs1−xNx dilute nitride achieved by N-implantation and flash lamp annealing

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Ge1−xSnx alloys synthesized by ion implantation and pulsed laser melting

Applied physics letters, 2014-07, Vol.105 (4)

2014

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Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx

Optical materials express, 2023-03, Vol.13 (3), p.752

2023

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Versatile plasma ion source with an internal evaporator

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2011-04, Vol.269 (7), p.700-707

2011

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Structural and optical properties of pulsed-laser deposited crystalline β -Ga 2 O 3 thin films on silicon

Semiconductor science and technology, 2019-03, Vol.34 (3), p.35001

2019

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Origin and enhancement of the 1.3 μ m luminescence from GaAs treated by ion-implantation and flash lamp annealing

Journal of applied physics, 2013-09, Vol.114 (9)

2013

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Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing

Journal of physics. D, Applied physics, 2017-10, Vol.50 (41), p.415102

2017

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Structural impact of chromium incorporation in as-grown and flash-lamp-annealed sputter deposited titanium oxide films

Journal of alloys and compounds, 2017-12, Vol.729, p.438-445

2017

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Ex situ n+ doping of GeSn alloys via non-equilibrium processing

Semiconductor science and technology, 2018-06, Vol.33 (6), p.65008

2018

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Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping

Nanotechnology, 2018-11, Vol.29 (47), p.474001-474001

2018

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Enhancement of carrier mobility in thin Ge layer by Sn co-doping

Semiconductor science and technology, 2016-09, Vol.31 (10), p.105012

2016

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The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures

Journal of applied physics, 2016-05, Vol.119 (18)

2016

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The effect of dimples geometry in the sliding surface on the tribological properties under starved lubrication conditions

Structural and optical properties of pulsed-laser deposited crystalline β-Ga2O3 thin films on silicon

Soft X-ray absorption study of sputtered tin oxide films

Charge transport in n-type As- and Sb-hyperdoped Ge

The photoluminescence response to structural changes of Yb implanted ZnO crystals subjected to non-equilibrium processing

Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting

An infrared transmission study of Ge:Mn thick films prepared by ion implantation and post-annealing

Engineering of optical and electrical properties of ZnO by non-equilibrium thermal processing: The role of zinc interstitials and zinc vacancies

Impact of Self-Trapped Excitons on Blue Photoluminescence in TiO2 Nanorods on Chemically Etched Si Pyramids

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

B20-type FeGe on Ge(100) prepared by pulsed laser melting

Suppressing the cellular breakdown in silicon supersaturated with titanium

Formation and photoluminescence of GaAs1−xNx dilute nitride achieved by N-implantation and flash lamp annealing

Ge1−xSnx alloys synthesized by ion implantation and pulsed laser melting

Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx

Versatile plasma ion source with an internal evaporator

Structural and optical properties of pulsed-laser deposited crystalline β -Ga 2 O 3 thin films on silicon

Origin and enhancement of the 1.3 μ m luminescence from GaAs treated by ion-implantation and flash lamp annealing

Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing

Structural impact of chromium incorporation in as-grown and flash-lamp-annealed sputter deposited titanium oxide films

Ex situ n+ doping of GeSn alloys via non-equilibrium processing

Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping

Enhancement of carrier mobility in thin Ge layer by Sn co-doping

The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures

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