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Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

Applied physics letters, 2016-10, Vol.109 (15)

2016

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Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Scientific reports, 2018-05, Vol.8 (1), p.7311-8, Article 7311

2018

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What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

Journal of applied physics, 2018-11, Vol.124 (18)

2018

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The critical thickness of InGaN on (0 0 0 1)GaN

Journal of crystal growth, 2008-11, Vol.310 (23), p.4913-4915

2008

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Polarity determination of polar and semipolar (112¯2) InN and GaN layers by valence band photoemission spectroscopy

Journal of applied physics, 2013-11, Vol.114 (17)

2013

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Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy

Semiconductor science and technology, 2020-11, Vol.35 (11), p.115005

2020

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MOVPE growth of semipolar (112¯2) AlN on m-plane (101¯0) sapphire

Journal of crystal growth, 2012-09, Vol.355 (1), p.59-62

2012

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Structural and optical properties of semipolar (112¯2) AlGaN grown on (101¯0) sapphire by metal–organic vapor phase epitaxy

Journal of crystal growth, 2013-03, Vol.367, p.42-47

2013

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Role of nitridation on polarity and growth of InN by metal–organic vapor phase epitaxy

Journal of crystal growth, 2013-08, Vol.376, p.17-22

2013

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Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers

Applied surface science, 2014-07, Vol.307, p.461-467

2014

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Growth and characterizations of semipolar (112¯2) InN

Journal of applied physics, 2012-07, Vol.112 (1)

2012

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High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor

Journal of crystal growth, 2011-01, Vol.315 (1), p.229-232

2011

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Comparison study of N- and In-polar {0001} InN layers grown by MOVPE

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.977-981

2012

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Growth mode of InGaN on GaN (0001) in MOVPE

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S565-S569

2009

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Growth of semipolar (10$ bar 1bar 3 $) InN on m -plane sapphire using MOVPE

Physica status solidi. PSS-RRL. Rapid research letters, 2010-06, Vol.4 (5-6), p.127-129

2010

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Growth of strained GaAsSb layers on GaAs (0 0 1) by MOVPE

Journal of crystal growth, 2005-04, Vol.276 (3), p.347-353

2005

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Segregation and desorption of antimony in InP (0 0 1) in MOVPE

Journal of crystal growth, 2007, Vol.298, p.159-162

2007

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Properties of InMnP (0 0 1) grown by MOVPE

Journal of crystal growth, 2008-08, Vol.310 (18), p.4046-4049

2008

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In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy

Journal of crystal growth, 2004-02, Vol.262 (1), p.78-83

2004

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InN growth on sapphire using different nitridation procedures

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1622-1625

2006

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Growth and characterization of manganese-doped InAsP

Journal of crystal growth, 2008-11, Vol.310 (23), p.5028-5031

2008

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In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs ( [formula omitted]) in molecular beam epitaxy

Journal of crystal growth, 2004-05, Vol.265 (3), p.425-433

2004

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In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxy

Journal of crystal growth, 2007, Vol.298, p.8-11

2007

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InN growth and annealing investigations using in-situ spectroscopic ellipsometry

Journal of crystal growth, 2004-12, Vol.272 (1), p.87-93

2004

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Gallium-rich reconstructions on GaAs(001)

Physica Status Solidi (b), 2003-11, Vol.240 (1), p.91-98

2003

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Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

The critical thickness of InGaN on (0 0 0 1)GaN

Polarity determination of polar and semipolar (112¯2) InN and GaN layers by valence band photoemission spectroscopy

Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy

MOVPE growth of semipolar (112¯2) AlN on m-plane (101¯0) sapphire

Structural and optical properties of semipolar (112¯2) AlGaN grown on (101¯0) sapphire by metal–organic vapor phase epitaxy

Role of nitridation on polarity and growth of InN by metal–organic vapor phase epitaxy

Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers

Growth and characterizations of semipolar (112¯2) InN

High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor

Comparison study of N- and In-polar {0001} InN layers grown by MOVPE

Growth mode of InGaN on GaN (0001) in MOVPE

Growth of semipolar (10$ bar 1bar 3 $) InN on m -plane sapphire using MOVPE

Growth of strained GaAsSb layers on GaAs (0 0 1) by MOVPE

Segregation and desorption of antimony in InP (0 0 1) in MOVPE

Properties of InMnP (0 0 1) grown by MOVPE

In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy

InN growth on sapphire using different nitridation procedures

Growth and characterization of manganese-doped InAsP

In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs ( [formula omitted]) in molecular beam epitaxy

In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxy

InN growth and annealing investigations using in-situ spectroscopic ellipsometry

Gallium-rich reconstructions on GaAs(001)

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