UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 30

Sortiert nach

Silicon nanocrystal based memory devices for NVM and DRAM applications

Solid-state electronics, 2004-09, Vol.48 (9), p.1463-1473

2004

Volltextzugriff (PDF)

Influence of silicon nanocrystal size and density on the performance of non-volatile memory arrays

Solid-state electronics, 2005-11, Vol.49 (11), p.1722-1727

2005

Volltextzugriff (PDF)

Silicon nanocrystal non-volatile memory for embedded memory scaling

Microelectronics and reliability, 2007-04, Vol.47 (4), p.585-592

2007

Volltextzugriff (PDF)

The zen of nonvolatile memories

2006 43rd ACM/IEEE Design Automation Conference, 2006, p.815-820

Prinz, Erwin J.

2006

Volltextzugriff (PDF)

The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

IEEE electron device letters, 1991-02, Vol.12 (2), p.42-44

1991

Volltextzugriff (PDF)

A model for the channel potential of charge-trapping memories and its implications for device scaling

Solid-state electronics, 2005-11, Vol.49 (11), p.1754-1758

2005

Volltextzugriff (PDF)

Current gain-Early voltage products in graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

IEEE transactions on electron devices, 1991-12, Vol.38 (12), p.2695-2696

1991

Volltextzugriff (PDF)

Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps

IEEE electron device letters, 1991-12, Vol.12 (12), p.661-663

1991

Volltextzugriff (PDF)

Nanocrystal physical attributes influencing non-volatile memory performance

63rd Device Research Conference Digest, 2005. DRC '05, 2005, Vol.1, p.37-38

2005

Volltextzugriff (PDF)

Base resistance and effective bandgap reduction in n-p-n Si/Si/sub 1-x/Ge/sub x//Si HBTs with heavy base doping

IEEE transactions on electron devices, 1996-03, Vol.43 (3), p.457-466

1996

Volltextzugriff (PDF)

Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

IEEE electron device letters, 1991-06, Vol.12 (6), p.303-305

1991

Volltextzugriff (PDF)

An embedded 90 nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase

Digest. International Electron Devices Meeting, 2002, p.927-930

2002

Volltextzugriff (PDF)

Reduction of p/sup +/-n/sup +/ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors

IEEE electron device letters, 1991-04, Vol.12 (4), p.163-165

1991

Volltextzugriff (PDF)

A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic

IEEE transactions on electron devices, 1992-11, Vol.39 (11), p.2636-2637

1992

Volltextzugriff (PDF)

Current Gain - Early Voltage Products In Graded Base Si/Si/sub 1-x/Ge/sub x/Si Heterojunction Bipolar Transistors

[1991] 49th Annual Device Research Conference Digest, 1991, p.IIB_5-0_27

1991

Volltextzugriff (PDF)

Analytical modeling of current gain-Earth voltage products in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

International Electron Devices Meeting 1991 [Technical Digest], 1991, p.853-856

1991

Volltextzugriff (PDF)

Base transport in near-ideal graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors from 150 K to 370 K

International Technical Digest on Electron Devices, 1990, p.975-978

1990

Volltextzugriff (PDF)

90nm Split-Gate Nanocrystal Non-Volatile Memory with Reduced Threshold Voltage

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop, 2006, p.60-61

2006

Volltextzugriff (PDF)

A 90nm Embedded 2-Bit Per Cell Nanocrystal Flash EEPROM

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop, 2006, p.62-63

2006

Volltextzugriff (PDF)

An embedded silicon nanocrystal nonvolatile memory for the 90nm technology node operating at 6V

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866), 2004, p.31-35

2004

Volltextzugriff (PDF)

A Novel Double Base Heterojunction Bipolar Transistor for Low Temperature Bipolar Logic

50th Annual Device Research Conference, 1992, p.0_22-0_23

1992

Volltextzugriff (PDF)

The effect of base-emitter spacers and strain dependent densities of states in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

International Technical Digest on Electron Devices Meeting, 1989, p.639-642

1989

Volltextzugriff (PDF)

A 6 V embedded 90 nm silicon nanocrystal nonvolatile memory

IEEE International Electron Devices Meeting 2003, 2003, p.26.2.1-26.2.4

2003

Volltextzugriff (PDF)

A comprehensive study of lateral and vertical current transport in Si/Si/sub 1-x/Ge/sub xSi HBT's

Proceedings of IEEE International Electron Devices Meeting, 1993, p.87-90

1993

Volltextzugriff (PDF)

Barcoded viral tracing of single-cell interactions in central nervous system inflammation

Science (American Association for the Advancement of Science), 2021-04, Vol.372 (6540)

2021

Volltextzugriff (PDF)

1 – 25 von 30

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(17)
Mit Volltextzugriff
(27)

Publikationsform

Artikel
(17)
Tagungsberichte
(13)

Sprache

Englisch
(30)
Japanisch
(5)

Erscheinungsjahr

n.n

Thema

Heterojunction Bipolar Transistors
(13)
Science & Technology
(12)
Voltage
(10)
Germanium Silicon Alloys
(8)
Silicon Germanium
(8)
Nonvolatile Memory
(7)
Photonic Band Gap
(7)
Engineering
(6)
Engineering, Electrical & Electronic
(6)
Technology
(6)
Bipolar Transistors
(5)
Doping
(5)
Electrons
(5)
Nanocrystals
(5)
Silicon
(5)
Applied Sciences
(4)
Biological And Medical Sciences
(4)
Boron
(4)
Electronics
(4)
Exact Sciences And Technology
(4)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Ieee Electron Device Letters
(4)
Ieee Transactions On Electron Devices
(3)
Journal Of Texture Studies
(3)
Solid-State Electronics
(3)
Science
(2)
Microelectronics And Reliability
(1)
Trends In Food Science & Technology
(1)

2 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Silicon nanocrystal based memory devices for NVM and DRAM applications

Influence of silicon nanocrystal size and density on the performance of non-volatile memory arrays

Silicon nanocrystal non-volatile memory for embedded memory scaling

The zen of nonvolatile memories

The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

A model for the channel potential of charge-trapping memories and its implications for device scaling

Current gain-Early voltage products in graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps

Nanocrystal physical attributes influencing non-volatile memory performance

Base resistance and effective bandgap reduction in n-p-n Si/Si/sub 1-x/Ge/sub x//Si HBTs with heavy base doping

Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

An embedded 90 nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase

Reduction of p/sup +/-n/sup +/ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors

A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic

Current Gain - Early Voltage Products In Graded Base Si/Si/sub 1-x/Ge/sub x/Si Heterojunction Bipolar Transistors

Analytical modeling of current gain-Earth voltage products in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

Base transport in near-ideal graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors from 150 K to 370 K

90nm Split-Gate Nanocrystal Non-Volatile Memory with Reduced Threshold Voltage

A 90nm Embedded 2-Bit Per Cell Nanocrystal Flash EEPROM

An embedded silicon nanocrystal nonvolatile memory for the 90nm technology node operating at 6V

A Novel Double Base Heterojunction Bipolar Transistor for Low Temperature Bipolar Logic

The effect of base-emitter spacers and strain dependent densities of states in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

A 6 V embedded 90 nm silicon nanocrystal nonvolatile memory

A comprehensive study of lateral and vertical current transport in Si/Si/sub 1-x/Ge/sub xSi HBT's

Barcoded viral tracing of single-cell interactions in central nervous system inflammation

Suchergebnisse filtern