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Do ethnicity and gender influence posterior tibial slope?

Journal of orthopaedics and traumatology, 2017-12, Vol.18 (4), p.319-324

2017

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Directional emissions from a moving light-source: Coincidence and simultaneity

Physics essays, 2014-03, Vol.27 (1), p.38-54

Prins, Johan F.

2014

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Ion implantation of diamond for electronic applications

Semiconductor science and technology, 2003-03, Vol.18 (3), p.S27-S33

Prins, Johan F

2003

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Implantation-doping of diamond with B+, C+, N+ and O+ ions using low temperature annealing

Diamond and related materials, 2002-03, Vol.11 (3-6), p.612-617

Prins, Johan F.

2002

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Using ion implantation to dope diamond — an update on selected issues

Diamond and related materials, 2001-09, Vol.10 (9), p.1756-1764

Prins, Johan F.

2001

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The diamond–vacuum interface: II. Electron extraction from n-type diamond: evidence for superconduction at room temperature

Semiconductor science and technology, 2003-03, Vol.18 (3), p.S131-S140

Prins, Johan F

2003

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The diamond–vacuum interface: I. A model of the interface between an n-type semiconductor, with negative electron affinity, and the vacuum

Semiconductor science and technology, 2003-03, Vol.18 (3), p.S125-S130

Prins, Johan F

2003

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On the annihilation of vacancies by diffusing interstitial atoms in diamond

Diamond and related materials, 2000-11, Vol.9 (11), p.1835-1839

Prins, Johan F

2000

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Radiation defects and their annealing behaviour in ion-implanted diamonds

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2000-05, Vol.166-167, p.364-373

2000

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The length of a longitudinally moving rod

Physics essays, 2013-12, Vol.26 (4), p.599-603

Prins, Johan F.

2013

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C +-damaged diamond: electrical measurements after rapid thermal annealing to 500°C

Diamond and related materials, 2001-03, Vol.10 (3), p.463-468

Prins, Johan F.

2001

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Vacancy diffusion and trapping in electron-irradiated type IaA diamonds

Diamond and related materials, 2001, Vol.10 (1), p.87-93

Prins, Johan F.

2001

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Electrical conduction in diamond after vacancy generation by means of carbon-ion implantation

Applied physics letters, 2000-04, Vol.76 (15), p.2095-2097

Prins, Johan F.

2000

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Cathodoluminescence and electroluminescence in ion implanted type II diamonds

Diamond and related materials, 1994, Vol.3 (4), p.922-925

Prins, Johan F.

1994

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n -type semiconducting diamond by means of oxygen-ion implantation

Physical review. B, Condensed matter, 2000-03, Vol.61 (11), p.7191-7194

Prins, Johan F.

2000

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The diamond-vacuum interface: I. A model of the interface between an n-type semiconductor, with negative electron affinity, and the vacuum: Diamond Electronics

Semiconductor science and technology, 2003, Vol.18 (3), p.S125-S130

PRINS, Johan F

2003

Volltextzugriff (PDF)

The diamond-vacuum interface: II. Electron extraction from n-type diamond: evidence for superconduction at room temperature: Diamond Electronics

Semiconductor science and technology, 2003, Vol.18 (3), p.S131-S140

PRINS, Johan F

2003

Volltextzugriff (PDF)

Ion implantation of diamond for electronic applications: Diamond Electronics

Semiconductor science and technology, 2003, Vol.18 (3), p.S27-S33

PRINS, Johan F

2003

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Ion-implanted, shallow-energy, donor centres in diamond: the effect of negative electron affinity

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2003-11, Vol.514 (1-3), p.69-78

Prins, Johan F.

2003

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Ion beam modification and dopant activation in diamond

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993, Vol.80, p.1433-1440

Prins, Johan F.

1993

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The nature of radiation damage in diamond: activation of oxygen donors

Diamond and related materials, 2000-04, Vol.9 (3-6), p.1275-1281

Prins, Johan F.

2000

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Graphitization and related variable-range-hopping conduction in ion-implanted diamond

Journal of physics. D, Applied physics, 2001-07, Vol.34 (14), p.2089-2096

Prins, Johan F

2001

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Towards improving the quality of semiconducting diamond layers doped with large atoms

Diamond and related materials, 1999-08, Vol.8 (8), p.1635-1641

Prins, Johan F.

1999

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Ballistic self-annealing during ion implantation

Journal of physics. D, Applied physics, 2001-10, Vol.34 (20), p.3003-3010

Prins, Johan F

2001

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Nitrogen-related n-type conduction with low thermal activation in diamond

Semiconductor science and technology, 2001-09, Vol.16 (9), p.L50-L52

Prins, Johan F

2001

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Do ethnicity and gender influence posterior tibial slope?

Directional emissions from a moving light-source: Coincidence and simultaneity

Ion implantation of diamond for electronic applications

Implantation-doping of diamond with B+, C+, N+ and O+ ions using low temperature annealing

Using ion implantation to dope diamond — an update on selected issues

The diamond–vacuum interface: II. Electron extraction from n-type diamond: evidence for superconduction at room temperature

The diamond–vacuum interface: I. A model of the interface between an n-type semiconductor, with negative electron affinity, and the vacuum

On the annihilation of vacancies by diffusing interstitial atoms in diamond

Radiation defects and their annealing behaviour in ion-implanted diamonds

The length of a longitudinally moving rod

C +-damaged diamond: electrical measurements after rapid thermal annealing to 500°C

Vacancy diffusion and trapping in electron-irradiated type IaA diamonds

Electrical conduction in diamond after vacancy generation by means of carbon-ion implantation

Cathodoluminescence and electroluminescence in ion implanted type II diamonds

n -type semiconducting diamond by means of oxygen-ion implantation

The diamond-vacuum interface: I. A model of the interface between an n-type semiconductor, with negative electron affinity, and the vacuum: Diamond Electronics

The diamond-vacuum interface: II. Electron extraction from n-type diamond: evidence for superconduction at room temperature: Diamond Electronics

Ion implantation of diamond for electronic applications: Diamond Electronics

Ion-implanted, shallow-energy, donor centres in diamond: the effect of negative electron affinity

Ion beam modification and dopant activation in diamond

The nature of radiation damage in diamond: activation of oxygen donors

Graphitization and related variable-range-hopping conduction in ion-implanted diamond

Towards improving the quality of semiconducting diamond layers doped with large atoms

Ballistic self-annealing during ion implantation

Nitrogen-related n-type conduction with low thermal activation in diamond

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