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Self-motion perception is sensitized in vestibular migraine: pathophysiologic and clinical implications

Scientific reports, 2019-10, Vol.9 (1), p.14323-12, Article 14323

2019

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The clinical manifestations of vestibular migraine: A review

Auris, nasus, larynx, 2017-06, Vol.44 (3), p.249-252

2017

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Vestibular labyrinth contributions to human whole-body motion discrimination

The Journal of neuroscience, 2012-09, Vol.32 (39), p.13537-13542

2012

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Optical characterization of magnesium incorporation in p-GaN layers for core-shell nanorod light-emitting diodes

Journal of physics. D, Applied physics, 2018-04, Vol.51 (15), p.155103

2018

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Central Integration of Canal and Otolith Signals is Abnormal in Vestibular Migraine

Frontiers in neurology, 2014-01, Vol.5, p.233-233

2014

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Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes

Journal of crystal growth, 2017-05, Vol.466, p.30-38

2017

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Motion Perception in Patients with Idiopathic Bilateral Vestibular Hypofunction

Otolaryngology-head and neck surgery, 2014-06, Vol.150 (6), p.1040-1042

2014

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Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method

Applied surface science, 2013-03, Vol.269, p.155-160

2013

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Clinical vestibular testing assessed with machine-learning algorithms

JAMA otolaryngology-- head & neck surgery, 2015-04, Vol.141 (4), p.364

2015

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The Impact of Oral Promethazine on Human Whole-Body Motion Perceptual Thresholds

Journal of the Association for Research in Otolaryngology, 2017-08, Vol.18 (4), p.581-590

2017

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Abnormal motion perception in vestibular migraine

The Laryngoscope, 2011-05, Vol.121 (5), p.1124-1125

2011

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Dynamic tilt thresholds are reduced in vestibular migraine

Journal of vestibular research, 2011-01, Vol.21 (6), p.323-330

2011

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Asymmetric responses to rotation at high frequencies in central vestibular neurons of the alert cat

Brain research, 2004-04, Vol.1005 (1), p.137-153

2004

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Cross-sectional SEM-EBIC analysis of semi-vertical GaN power diodes

2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2022, p.1-6

2022

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Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-10

2019

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Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure

Materials science in semiconductor processing, 2020-11, Vol.118, p.105203, Article 105203

2020

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Frequency-dependent effects of glutamate antagonists on the vestibulo-ocular reflex of the cat

Brain research, 2000-02, Vol.857 (1), p.252-264

2000

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SEM techniques for characterization of GaN nanostructures and devices

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, 2010, p.295-296

2010

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Cathodoluminescence characterization of InGaN/GaN QW pyramidal structure by Monte Carlo method

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, 2012, p.79-82

2012

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Simulation Analysis of InAlN/GaN Monolithic NAND Logic Cell

2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2018, p.1-4

2018

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The Neurology of Vision. Contemporary Neurology Series. 2001. By Johnathan D. Trobe. Published by Oxford University Press. 451 pages. C$192.00 approx

Canadian journal of neurological sciences, 2002-05, Vol.29 (2), p.199-199

Priesol, Adrian J.

2002

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Relaxation of low-frequency noise in AlGaN/GaN HEMTs

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, 2012, p.199-202

2012

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Post-deposition annealing and thermal stability of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016, p.177-180

2016

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Investigation of defects in GaN HFET structures by electroluminescence

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems, 2014, p.1-4

2014

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Time resolved EBIC study of InAlN/GaN HFETs

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems, 2014, p.1-4

2014

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Self-motion perception is sensitized in vestibular migraine: pathophysiologic and clinical implications

The clinical manifestations of vestibular migraine: A review

Vestibular labyrinth contributions to human whole-body motion discrimination

Optical characterization of magnesium incorporation in p-GaN layers for core-shell nanorod light-emitting diodes

Central Integration of Canal and Otolith Signals is Abnormal in Vestibular Migraine

Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes

Motion Perception in Patients with Idiopathic Bilateral Vestibular Hypofunction

Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method

Clinical vestibular testing assessed with machine-learning algorithms

The Impact of Oral Promethazine on Human Whole-Body Motion Perceptual Thresholds

Abnormal motion perception in vestibular migraine

Dynamic tilt thresholds are reduced in vestibular migraine

Asymmetric responses to rotation at high frequencies in central vestibular neurons of the alert cat

Cross-sectional SEM-EBIC analysis of semi-vertical GaN power diodes

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure

Frequency-dependent effects of glutamate antagonists on the vestibulo-ocular reflex of the cat

SEM techniques for characterization of GaN nanostructures and devices

Cathodoluminescence characterization of InGaN/GaN QW pyramidal structure by Monte Carlo method

Simulation Analysis of InAlN/GaN Monolithic NAND Logic Cell

The Neurology of Vision. Contemporary Neurology Series. 2001. By Johnathan D. Trobe. Published by Oxford University Press. 451 pages. C$192.00 approx

Relaxation of low-frequency noise in AlGaN/GaN HEMTs

Post-deposition annealing and thermal stability of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs

Investigation of defects in GaN HFET structures by electroluminescence

Time resolved EBIC study of InAlN/GaN HFETs

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