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High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

IEEE electron device letters, 1999-04, Vol.20 (4), p.161-163

1999

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Applications of SiC MESFETs and GaN HEMTs in power amplifier design

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.3, p.1819-1822 vol.3

2002

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High power hybrid and MMIC amplifiers using wide-bandgap semiconductor devices on semi-insulating SiC substrates

60th DRC. Conference Digest Device Research Conference, 2002, p.175-178

2002

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Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide

Materials science forum, 2000-05, Vol.338-342, p.1643-1646

2000

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Wide bandgap semiconductor devices and MMICs for RF power applications

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.17.4.1-17.4.4

2001

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High power demonstration at 10 GHz with GaN-AlGaN HEMT hybrid amplifiers

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526), 2000, p.37-38

2000

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An ion-implanted 13 watt C-band MMIC with 60% peak power added efficiency

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers, 1996, p.25-28

1996

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SiC MESFET hybrid amplifier with 30-W output power at 10 GHz

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122), 2000, p.173-177

2000

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Progress in high power SiC microwave MESFETs

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.1, p.321-324 vol.1

1999

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Progress in SiC and GaN microwave devices fabricated on semi-insulating 4H-SiC substrates

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393), 1999, p.38-41

1999

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SiC MESFET with output power of 50 watts CW at S-band

56th Annual Device Research Conference Digest (Cat. No.98TH8373), 1998, p.92-93

1998

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A parameter extraction technique for heterojunction bipolar transistors

IEEE MTT-S International Microwave Symposium Digest, 1989, p.897-900 vol.3

1989

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Technology development for GaN/AlGaN HEMT hybrid and MMIC amplifiers on semi-insulating SiC substrates

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122), 2000, p.232-236

2000

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High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

Applications of SiC MESFETs and GaN HEMTs in power amplifier design

High power hybrid and MMIC amplifiers using wide-bandgap semiconductor devices on semi-insulating SiC substrates

Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide

Wide bandgap semiconductor devices and MMICs for RF power applications

High power demonstration at 10 GHz with GaN-AlGaN HEMT hybrid amplifiers

An ion-implanted 13 watt C-band MMIC with 60% peak power added efficiency

SiC MESFET hybrid amplifier with 30-W output power at 10 GHz

Progress in high power SiC microwave MESFETs

Progress in SiC and GaN microwave devices fabricated on semi-insulating 4H-SiC substrates

SiC MESFET with output power of 50 watts CW at S-band

A parameter extraction technique for heterojunction bipolar transistors

Technology development for GaN/AlGaN HEMT hybrid and MMIC amplifiers on semi-insulating SiC substrates

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