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Ultra-high hole mobility exceeding one million in a strained germanium quantum well

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Tuning of a superconducting microwave resonator at 77 K using an integrated micromachined silicon vertical actuator

Journal of micromechanics and microengineering, 2010-09, Vol.20 (9), p.095032-095032, Article 095032

2010

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Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Solid-state electronics, 2014-08, Vol.98, p.93-98

2014

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Silicon comb-drive actuators for low-temperature tuning of superconducting microwave circuits

Journal of micromechanics and microengineering, 2008-12, Vol.18 (12), p.125003-125003 (7)

2008

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Interfacial Engineering of Semiconductor–Superconductor Junctions for High Performance Micro-Coolers

Scientific reports, 2015-12, Vol.5 (1), p.17398-17398, Article 17398

2015

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A strained silicon cold electron bolometer using Schottky contacts

Applied physics letters, 2014-07, Vol.105 (4)

2014

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Cryogenic performance of micromachined silicon rocking actuator for tuning a superconducting resonator

Electronics letters, 2010-11, Vol.46 (23), p.1569-1571

2010

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Low-frequency noise mechanisms in Si and pseudomorphic SiGe p-channel field-effect transistors

Applied physics letters, 2004-12, Vol.85 (24), p.6019-6021

2004

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Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K

Semiconductor science and technology, 2004-09, Vol.19 (9), p.L95-L98

2004

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Superconducting platinum silicide for electron cooling in silicon

Solid-state electronics, 2015-01, Vol.103, p.15-18

2015

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Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Solid-state electronics, 2015-01, Vol.103, p.40-43

2015

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Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1-3), p.444-448

2002

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Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

Applied physics letters, 2001-03, Vol.78 (10), p.1424-1426

2001

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Cryogenic performance of micromachined silicon rocking actuator for tuning a superconducting resonator

Electronics letters, 2010-11, Vol.46 (23), p.1-1

2010

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Strain enhanced electron cooling in a degenerately doped semiconductor

Applied physics letters, 2011-12, Vol.99 (25), p.251908-251908-4

2011

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High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

Journal of applied physics, 2014-04, Vol.115 (14)

2014

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Strain dependence of electron-phonon energy loss rate in many-valley semiconductors

Applied physics letters, 2011-05, Vol.98 (18), p.182103-182103-3

2011

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Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers

Journal of low temperature physics, 2016-07, Vol.184 (1-2), p.231-237

2016

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On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

Journal of applied physics, 2011-12, Vol.110 (12), p.124503-124503-6

2011

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Electrical Isolation of Dislocations in Ge Layers on Si(001) Substrates through CMOS Compatible Suspended Structures

ECS transactions, 2013, Vol.50 (9), p.737-746

2013

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Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop (UCMMT), 2015, p.1-4

2015

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Transitions: Appointments, resignations, retirements, tenure awards, fellowships, deaths

The Chronicle of Higher Education, 2018-04

2018

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Appointments, Resignations, Deaths (1/12/2018)

The Chronicle of Higher Education, 2018-04

Tucker, Brianna A

2018

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SHORTER NOTICES

The English historical review, 1996-09, Vol.CXI (443), p.1003-1004

PREST, J. M.

1996

Volltextzugriff (PDF)

Gladstone and Russell

Transactions of the Royal Historical Society, 1966-12, Vol.16, p.43-63

Prest, J. M.

1966

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Ultra-high hole mobility exceeding one million in a strained germanium quantum well

Tuning of a superconducting microwave resonator at 77 K using an integrated micromachined silicon vertical actuator

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Silicon comb-drive actuators for low-temperature tuning of superconducting microwave circuits

Interfacial Engineering of Semiconductor–Superconductor Junctions for High Performance Micro-Coolers

A strained silicon cold electron bolometer using Schottky contacts

Cryogenic performance of micromachined silicon rocking actuator for tuning a superconducting resonator

Low-frequency noise mechanisms in Si and pseudomorphic SiGe p-channel field-effect transistors

Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K

Superconducting platinum silicide for electron cooling in silicon

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

Cryogenic performance of micromachined silicon rocking actuator for tuning a superconducting resonator

Strain enhanced electron cooling in a degenerately doped semiconductor

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

Strain dependence of electron-phonon energy loss rate in many-valley semiconductors

Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers

On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

Electrical Isolation of Dislocations in Ge Layers on Si(001) Substrates through CMOS Compatible Suspended Structures

Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

Transitions: Appointments, resignations, retirements, tenure awards, fellowships, deaths

Appointments, Resignations, Deaths (1/12/2018)

SHORTER NOTICES

Gladstone and Russell

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