UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 57

Sortiert nach

Erratum: “Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED” surface science 677 (2018) 306–315

Surface science, 2019-11, Vol.689, p.121403, Article 121403

2019

Volltextzugriff (PDF)

Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED

Surface science, 2018-11, Vol.677, p.306-315

2018

Volltextzugriff (PDF)

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

Surface science, 2018-06, Vol.672-673, p.23-32

2018

Volltextzugriff (PDF)

Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

Journal of crystal growth, 1999-05, Vol.201-202, p.170-173

1999

Volltextzugriff (PDF)

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Applied physics letters, 2013-04, Vol.102 (17)

2013

Volltextzugriff (PDF)

Growth, spectroscopy and high power laser operation of Yb:YAl3(BO3)4 crystal: Continuous-wave, mode-locking and chirped pulse regenerative amplification

Optical materials, 2019-03, Vol.89, p.261-267

2019

Volltextzugriff (PDF)

Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.664-666

2018

Volltextzugriff (PDF)

Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays

Physica. E, Low-dimensional systems & nanostructures, 2000-02, Vol.6 (1), p.828-831

2000

Volltextzugriff (PDF)

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1499-1505

2016

Volltextzugriff (PDF)

Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1595-1599

2016

Volltextzugriff (PDF)

Effect of the growth temperature on the statistical parameters of GaN surface morphology

Semiconductors (Woodbury, N.Y.), 2014-07, Vol.48 (7), p.872-874

2014

Volltextzugriff (PDF)

Stress-induced transformation of defects in homoepitaxial beryllium-doped GaAs thin films

Physica. B, Condensed matter, 2001-12, Vol.308, p.820-822

2001

Volltextzugriff (PDF)

Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials

Semiconductors (Woodbury, N.Y.), 2015-12, Vol.49 (12), p.1587-1591

2015

Volltextzugriff (PDF)

Fröhlich resonance in the AsSb/AlGaAs system

Physics of the solid state, 2014-10, Vol.56 (10), p.1952-1956

2014

Volltextzugriff (PDF)

Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions

Semiconductors (Woodbury, N.Y.), 2012-10, Vol.46 (10), p.1291-1295

2012

Volltextzugriff (PDF)

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

Semiconductors (Woodbury, N.Y.), 2017-01, Vol.51 (1), p.38-42

2017

Volltextzugriff (PDF)

New system of self-assembled GaSb/GaP quantum dots

Semiconductors (Woodbury, N.Y.), 2012-12, Vol.46 (12), p.1534-1538

2012

Volltextzugriff (PDF)

Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism

Journal of applied physics, 2007-07, Vol.102 (2), p.023520-023520-6

2007

Volltextzugriff (PDF)

Electron microscopy of GaAs Structures with InAs and as quantum dots

Semiconductors (Woodbury, N.Y.), 2011-12, Vol.45 (12), p.1580-1582

2011

Volltextzugriff (PDF)

Structural study of low-temperature grown superlattices of GaAs with delta-layers of Sb and P

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4970-4973

2009

Volltextzugriff (PDF)

115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

Laser physics letters, 2011-06, Vol.8 (6), p.431-435

2011

Volltextzugriff (PDF)

Molecular-beam epitaxy of GaAs/Si structures for high-performance tandem [A.sup.III][B.sup.V]/Si-solar energy converters on an active silicon substrate

Russian physics journal, 2011-02, Vol.53 (9), p.906

2011

Volltextzugriff (PDF)

115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

Laser physics letters, 2011-06, Vol.8 (6), p.431-435

2011

Volltextzugriff (PDF)

InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates

Russian physics journal, 2014-07, Vol.57 (3), p.359-363

2014

Volltextzugriff (PDF)

Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates

Russian physics journal, 2013-06, Vol.56 (1), p.55-61

2013

Volltextzugriff (PDF)

1 – 25 von 57

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(42)
Mit Volltextzugriff
(53)

Publikationsform

Artikel
(49)
Tagungsberichte
(8)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(41)
Physical Sciences
(39)
Physics
(39)
Physics, Condensed Matter
(30)
Materials Science
(18)
Gallium Arsenide
(15)
Technology
(14)
Physics And Astronomy
(13)
Annealing
(11)
Materials Science, Multidisciplinary
(11)
Magnetism
(10)
Epitaxy
(9)
Magnetic Materials
(9)
Molecular Beam Epitaxy
(8)
Physics, Applied
(8)
Crystallography
(7)
Molecular Beam Epitaxial Growth
(7)
Gallium Arsenides
(5)
Layers
(5)
Semiconductor Materials
(5)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Erratum: “Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED” surface science 677 (2018) 306–315

Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Growth, spectroscopy and high power laser operation of Yb:YAl3(BO3)4 crystal: Continuous-wave, mode-locking and chirped pulse regenerative amplification

Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs

Effect of the growth temperature on the statistical parameters of GaN surface morphology

Stress-induced transformation of defects in homoepitaxial beryllium-doped GaAs thin films

Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials

Fröhlich resonance in the AsSb/AlGaAs system

Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

New system of self-assembled GaSb/GaP quantum dots

Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism

Electron microscopy of GaAs Structures with InAs and as quantum dots

Structural study of low-temperature grown superlattices of GaAs with delta-layers of Sb and P

115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

Molecular-beam epitaxy of GaAs/Si structures for high-performance tandem [A.sup.III][B.sup.V]/Si-solar energy converters on an active silicon substrate

115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates

Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates

Suchergebnisse filtern