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Error in Runge-Kutta methods

International journal of mathematical education in science and technology, 2013-04, Vol.44 (3), p.434-442

Prentice, J.S.C.

2013

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Numerical differentiation - a general purpose algorithm

International journal of mathematical education in science and technology, 2013-01, Vol.44 (1), p.116-122

Prentice, J.S.C.

2013

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Relative and absolute error control in a finite-difference method solution of Poisson's equation

International journal of mathematical education in science and technology, 2012-07, Vol.43 (5), p.684-694

Prentice, J.S.C.

2012

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General error propagation in the RK rGL m method

Journal of computational and applied mathematics, 2009, Vol.228 (1), p.344-354

Prentice, J.S.C.

2009

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Spectral response of a-Si:H p–i–n solar cells

Solar energy materials and solar cells, 2001-11, Vol.69 (4), p.303-314

Prentice, J.S.C.

2001

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Computer simulation of the effect of phosphorous doping of the i-layer in a thin-film a-Si:H p–i–n solar cell

Solar energy materials and solar cells, 2000-01, Vol.61 (3), p.287-300

Prentice, J.S.C.

2000

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First-principles Derivation of a Third-order Method for Solving a Two-dimensional Nonlinear System

Journal of mathematics research, 2010-10, Vol.2 (4)

Prentice, J.S.C.

2010

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Effect of interface states at the SnO2/p-a-Si:H interface in an a-Si:H solar cell

Solar energy materials and solar cells, 2002-01, Vol.71 (1), p.131-140

PRENTICE, J. S. C

2002

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Limiting carrier effect in a-Si:H solar cells

Solar energy materials and solar cells, 2001, Vol.69 (1), p.9-16

Prentice, J.S.C.

2001

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The effect of surface states at the SnO2/p-a-Si:H interface

Journal of non-crystalline solids, 2000, Vol.262 (1-3), p.99-105

PRENTICE, J. S. C

2000

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Truncation and roundoff errors in three-point approximations of first and second derivatives

Applied mathematics and computation, 2011, Vol.217 (9), p.4576-4581

Prentice, J.S.C.

2011

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Erratum to “Comments on numerically improved Gauss–Legendre quadrature” [Appl. Math. Comput. 174 (2) (2006) 1454]

Applied mathematics and computation, 2006-12, Vol.183 (1), p.709-709

Prentice, J.S.C.

2006

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Effect of interface states at the SnO 2/p-a-Si:H interface in an a-Si:H solar cell

Solar energy materials and solar cells, 2002, Vol.71 (1), p.131-140

Prentice, J.S.C.

2002

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General error propagation in the RKrGLm method

Journal of computational and applied mathematics, 2009-06, Vol.228 (1), p.344-354

PRENTICE, J. S. C

2009

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The effect of surface states at the SnO 2/p-a-Si:H interface

Journal of non-crystalline solids, 2000, Vol.262 (1), p.99-105

Prentice, J.S.C.

2000

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The RKGL method for the numerical solution of initial-value problems

Journal of computational and applied mathematics, 2008-04, Vol.213 (2), p.477-487

Prentice, J.S.C.

2008

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Composite Gauss-Legendre quadrature with error control

International journal of mathematical education in science and technology, 2011-07, Vol.42 (5), p.705-706

Prentice, J.S.C.

2011

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Coherent, partially coherent and incoherent light absorption in thin-film multilayer structures

Journal of physics. D, Applied physics, 2000-12, Vol.33 (24), p.3139-3145

Prentice, J S C

2000

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Composite Gauss-Legendre quadrature with error control

International journal of mathematical education in science and technology, 2011-06, Vol.42 (4), p.557-564

Prentice, J.S.C.

2011

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Comments on numerically improved Gauss–Legendre quadrature

Applied mathematics and computation, 2006-03, Vol.174 (2), p.1454-1459

Prentice, J.S.C.

2006

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Amplification and suppression of round-off error in Runge-Kutta methods

International journal of mathematical education in science and technology, 2011-04, Vol.42 (3), p.377-385

Prentice, J.S.C.

2011

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The nature of the nodes, weights and degree of precision in Gaussian quadrature rules

International journal of mathematical education in science and technology, 2011-01, Vol.42 (1), p.109-117

Prentice, J.S.C.

2011

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Limiting carrier effect in a-Si:H solar cells

Fuel and energy abstracts, 2002-07, Vol.43 (4), p.269-269

Prentice, J.S.C.

2002

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Optical generation rate of electron-hole pairs in multilayer thin-film photovoltaic cells

Journal of physics. D, Applied physics, 1999-09, Vol.32 (17), p.2146-2150

Prentice, J S C

1999

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Optimal optical generation profiles in a-Si:H p–i–n solar cells

Solar energy materials and solar cells, 2002-01, Vol.71 (1), p.85-101

Prentice, J.S.C

2002

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Error in Runge-Kutta methods

Numerical differentiation - a general purpose algorithm

Relative and absolute error control in a finite-difference method solution of Poisson's equation

General error propagation in the RK rGL m method

Spectral response of a-Si:H p–i–n solar cells

Computer simulation of the effect of phosphorous doping of the i-layer in a thin-film a-Si:H p–i–n solar cell

First-principles Derivation of a Third-order Method for Solving a Two-dimensional Nonlinear System

Effect of interface states at the SnO2/p-a-Si:H interface in an a-Si:H solar cell

Limiting carrier effect in a-Si:H solar cells

The effect of surface states at the SnO2/p-a-Si:H interface

Truncation and roundoff errors in three-point approximations of first and second derivatives

Erratum to “Comments on numerically improved Gauss–Legendre quadrature” [Appl. Math. Comput. 174 (2) (2006) 1454]

Effect of interface states at the SnO 2/p-a-Si:H interface in an a-Si:H solar cell

General error propagation in the RKrGLm method

The effect of surface states at the SnO 2/p-a-Si:H interface

The RKGL method for the numerical solution of initial-value problems

Composite Gauss-Legendre quadrature with error control

Coherent, partially coherent and incoherent light absorption in thin-film multilayer structures

Composite Gauss-Legendre quadrature with error control

Comments on numerically improved Gauss–Legendre quadrature

Amplification and suppression of round-off error in Runge-Kutta methods

The nature of the nodes, weights and degree of precision in Gaussian quadrature rules

Limiting carrier effect in a-Si:H solar cells

Optical generation rate of electron-hole pairs in multilayer thin-film photovoltaic cells

Optimal optical generation profiles in a-Si:H p–i–n solar cells

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