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Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs

IEEE transactions on nuclear science, 2021-08, Vol.68 (8), p.1642-1650

2021

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Microprocessor Error Diagnosis by Trace Monitoring Under Laser Testing

IEEE transactions on nuclear science, 2021-08, Vol.68 (8), p.1651-1659

2021

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Analysis of the Single-Event Latch-Up Cross section of a 16 nm FinFET System-on-Chip Using Backside Single-Photon Absorption Laser Testing and Correlation With Heavy Ion Data

IEEE transactions on nuclear science, 2024-08, Vol.71 (8), p.1645-1653

2024

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Bridging RHA Methodology From Component to System Level Applied to System-on-Modules

IEEE transactions on nuclear science, 2022-07, Vol.69 (7), p.1747-1756

2022

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Impact of Aging Degradation on Heavy-Ion SEU Response of 28-nm UTBB FD-SOI Technology

IEEE transactions on nuclear science, 2022-08, Vol.69 (8), p.1865-1875

2022

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Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1365-1373

2020

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Analysis of SET Propagation in a System in Package Point of Load Converter

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1494-1502

2020

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Determining Realistic Parameters for the Double Exponential Law that Models Transient Current Pulses

IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1813-1818

2014

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Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2842-2853

2008

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Exploiting Transistor Folding Layout as RHBD Technique Against Single-Event Transients

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1581-1589

2020

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Impact of Complex Logic Cell Layout on the Single-Event Transient Sensitivity

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1465-1472

2019

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Design exploration of majority voter architectures based on the signal probability for TMR strategy optimization in space applications

Microelectronics and reliability, 2020-11, Vol.114, p.113877, Article 113877

2020

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Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.988-998

2012

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Reliability-driven pin assignment optimization to improve in-orbit soft-error rate

Microelectronics and reliability, 2020-11, Vol.114, p.113885, Article 113885

2020

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Analysis of Single-Event Effects in DDR3 and DDR3L SDRAMs Using Laser Testing and Monte-Carlo Simulations

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.262-268

2018

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The Power Law Shape of Heavy Ions Experimental Cross Section

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.427-433

2017

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3D knife-edge characterization of two-photon absorption volume in silicon for integrated circuit testing

Optics express, 2011-11, Vol.19 (23), p.22594-22599

2011

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Investigation on the SEL Sensitive Depth of an SRAM Using Linear and Two-Photon Absorption Laser Testing

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2637-2643

2011

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Characterization and modeling of laser-induced single-event burn-out in SiC power diodes

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1315-1319

2013

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Heavy Ion SEU Cross Section Calculation Based on Proton Experimental Data, and Vice Versa

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3564-3571

2014

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Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell

Microelectronics and reliability, 2013-11, Vol.53 (9-11), p.1325-1328

2013

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Time-resolved scanning of integrated circuits with a pulsed laser: application to transient fault injection in an ADC

IEEE transactions on instrumentation and measurement, 2004-08, Vol.53 (4), p.1227-1231

2004

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Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90 nm technology

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2035-2038

2012

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Electrical modeling of the effect of beam profile for pulsed laser fault injection

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1143-1147

2009

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Influence of Laser Pulse Duration in Single Event Upset Testing

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1799-1805

2006

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Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs

Microprocessor Error Diagnosis by Trace Monitoring Under Laser Testing

Analysis of the Single-Event Latch-Up Cross section of a 16 nm FinFET System-on-Chip Using Backside Single-Photon Absorption Laser Testing and Correlation With Heavy Ion Data

Bridging RHA Methodology From Component to System Level Applied to System-on-Modules

Impact of Aging Degradation on Heavy-Ion SEU Response of 28-nm UTBB FD-SOI Technology

Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

Analysis of SET Propagation in a System in Package Point of Load Converter

Determining Realistic Parameters for the Double Exponential Law that Models Transient Current Pulses

Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

Exploiting Transistor Folding Layout as RHBD Technique Against Single-Event Transients

Impact of Complex Logic Cell Layout on the Single-Event Transient Sensitivity

Design exploration of majority voter architectures based on the signal probability for TMR strategy optimization in space applications

Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL

Reliability-driven pin assignment optimization to improve in-orbit soft-error rate

Analysis of Single-Event Effects in DDR3 and DDR3L SDRAMs Using Laser Testing and Monte-Carlo Simulations

The Power Law Shape of Heavy Ions Experimental Cross Section

3D knife-edge characterization of two-photon absorption volume in silicon for integrated circuit testing

Investigation on the SEL Sensitive Depth of an SRAM Using Linear and Two-Photon Absorption Laser Testing

Characterization and modeling of laser-induced single-event burn-out in SiC power diodes

Heavy Ion SEU Cross Section Calculation Based on Proton Experimental Data, and Vice Versa

Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell

Time-resolved scanning of integrated circuits with a pulsed laser: application to transient fault injection in an ADC

Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90 nm technology

Electrical modeling of the effect of beam profile for pulsed laser fault injection

Influence of Laser Pulse Duration in Single Event Upset Testing

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