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Peculiarities in the mechanism of current flow through an ohmic contact to gallium phosphide

Technical physics letters, 2004-10, Vol.30 (10), p.806-809

2004

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Current flow mechanism in ohmic contact to n-4H-SiC

Semiconductors (Woodbury, N.Y.), 2010-04, Vol.44 (4), p.463-466

2010

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Field and temperature dependencies of the quantum efficiency of GaAs and GaP Schottky diodes

Journal of physics. Condensed matter, 1999-01, Vol.11 (2), p.455-463

1999

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Flow of the current along metallic shunts in ohmic contacts to wide-gap III–V semiconductors

Semiconductors (Woodbury, N.Y.), 2009-09, Vol.43 (9), p.1164-1169

2009

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Ultraviolet radiation photodetectors based on structures consisting of a metal and a wide-bandgap semiconductor

Semiconductors (Woodbury, N.Y.), 2003-08, Vol.37 (8), p.944-948

2003

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Transition processes occurring under continuous and stepwise heating of GaAs surface-barrier structures

Technical physics, 2001-09, Vol.46 (9), p.1128-1132

2001

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Dependence of the mechanism of current flow in the in-n-GaN alloyed ohmic contact on the majority carrier concentration

Semiconductors (Woodbury, N.Y.), 2008-11, Vol.42 (11), p.1315-1317

2008

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Temperature dependence of the short-wave quantum efficiency of GaAs and GaP surface-barrier photosensors

Sensors and actuators. A. Physical., 1997-02, Vol.58 (2), p.121-123

1997

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Ohmic contact formation during continuous heating of GaAs and GaP Shottky diodes

Semiconductors (Woodbury, N.Y.), 1998-02, Vol.32 (2), p.181-183

1998

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The mechanism of current flow in an alloyed In-GaN ohmic contact

Semiconductors (Woodbury, N.Y.), 2006-10, Vol.40 (10), p.1173-1177

2006

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A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes

Semiconductors (Woodbury, N.Y.), 1999-07, Vol.33 (7), p.804-806

1999

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Influence of the formation of hot excitons on the quantum efficiency of short-wavelength photoelectric conversion in III–V semiconductors

Physics of the solid state, 1998-05, Vol.40 (5), p.870-871

1998

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Effect of the electric field in the space-charge layer on the efficiency of short-wave photoelectric conversion in GaAs Schottky diodes

Semiconductors (Woodbury, N.Y.), 1997-10, Vol.31 (10), p.1053-1056

1997

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Photoelectric effect in GaAs-based surface-barrier structures: Temperature dependence of the short-wavelength quantum efficiency

Semiconductors (Woodbury, N.Y.), 1997-05, Vol.31 (5), p.476

Gol’dberg, Yu. A.

1997

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Mechanism of current flow in alloyed ohmic In/GaAs contacts

Technical physics, 2007-02, Vol.52 (2), p.285-287

2007

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Field and temperature dependencies of the quantum efficiency of GaAs and GaP Schottky diodes

Journal of physics. Condensed matter, 1999, Vol.11 (2), p.455-463

1999

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CONTROLE PRESSÓRICO E INÉRCIA TERAPÊUTICA NO AMBULATÓRIO ESCOLA DA UNIVERSIDADE IGUAÇU

Revista brasileira de hipertensão, 2020-12, Vol.27 (2), p.59-63

2020

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Ideal GaP surface-barrier diodes

Electronics letters, 1971-01, Vol.7 (20), p.601

1971

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Constructive polynomial approximation with a priori error bounds for nonlinear initial value differential problems

Computers & mathematics with applications (1987), 1999-10, Vol.38 (7), p.9-19

1999

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Crystal and molecular structure and spectroscopic properties of tris(o-phenanthroline) iron (II) nitroprusside dihydrate: [Fe(o-phen)3]-[Fe(CN)5NO]•2H2O

Journal of Crystallographic and Spectroscopic Research, 1986-08, Vol.16 (4), p.585-595

1986

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A connectomic approach for subcallosal cingulate deep brain stimulation surgery: prospective targeting in treatment-resistant depression

Molecular psychiatry, 2018-04, Vol.23 (4), p.843-849

2018

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COVID19: Consecuencias y desafíos en la economía colombiana. Una mirada desde las universidades

2022

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Defining Critical White Matter Pathways Mediating Successful Subcallosal Cingulate Deep Brain Stimulation for Treatment-Resistant Depression

Biological psychiatry (1969), 2014-12, Vol.76 (12), p.963-969

2014

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Samuel Beckett dans les marges du surréalisme: Ou l’écriture du rocking chair

Posse, Bernard-Olivier

1, 2021

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Spectroscopic, electrochemical and photophysical properties of the novel complex tetracyano-1,10-phenanthroline-5,6-dione-ruthenate(II) and its application as a sensitizer in solar cells

Inorganica Chimica Acta, 2020-11, Vol.512, p.119903, Article 119903

2020

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Peculiarities in the mechanism of current flow through an ohmic contact to gallium phosphide

Current flow mechanism in ohmic contact to n-4H-SiC

Field and temperature dependencies of the quantum efficiency of GaAs and GaP Schottky diodes

Flow of the current along metallic shunts in ohmic contacts to wide-gap III–V semiconductors

Ultraviolet radiation photodetectors based on structures consisting of a metal and a wide-bandgap semiconductor

Transition processes occurring under continuous and stepwise heating of GaAs surface-barrier structures

Dependence of the mechanism of current flow in the in-n-GaN alloyed ohmic contact on the majority carrier concentration

Temperature dependence of the short-wave quantum efficiency of GaAs and GaP surface-barrier photosensors

Ohmic contact formation during continuous heating of GaAs and GaP Shottky diodes

The mechanism of current flow in an alloyed In-GaN ohmic contact

A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes

Influence of the formation of hot excitons on the quantum efficiency of short-wavelength photoelectric conversion in III–V semiconductors

Effect of the electric field in the space-charge layer on the efficiency of short-wave photoelectric conversion in GaAs Schottky diodes

Photoelectric effect in GaAs-based surface-barrier structures: Temperature dependence of the short-wavelength quantum efficiency

Mechanism of current flow in alloyed ohmic In/GaAs contacts

Field and temperature dependencies of the quantum efficiency of GaAs and GaP Schottky diodes

CONTROLE PRESSÓRICO E INÉRCIA TERAPÊUTICA NO AMBULATÓRIO ESCOLA DA UNIVERSIDADE IGUAÇU

Ideal GaP surface-barrier diodes

Constructive polynomial approximation with a priori error bounds for nonlinear initial value differential problems

Crystal and molecular structure and spectroscopic properties of tris(o-phenanthroline) iron (II) nitroprusside dihydrate: [Fe(o-phen)3]-[Fe(CN)5NO]•2H2O

A connectomic approach for subcallosal cingulate deep brain stimulation surgery: prospective targeting in treatment-resistant depression

COVID19: Consecuencias y desafíos en la economía colombiana. Una mirada desde las universidades

Defining Critical White Matter Pathways Mediating Successful Subcallosal Cingulate Deep Brain Stimulation for Treatment-Resistant Depression

Samuel Beckett dans les marges du surréalisme: Ou l’écriture du rocking chair

Spectroscopic, electrochemical and photophysical properties of the novel complex tetracyano-1,10-phenanthroline-5,6-dione-ruthenate(II) and its application as a sensitizer in solar cells

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