UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Characteristic Properties of Ceramics Luminescence Based on Cubic (ZR0.82–xHFxY0.l7Eu0.0l)O1.91

Optics and spectroscopy, 2023-03, Vol.131 (3), p.172-177

2023

Volltextzugriff (PDF)

Sensitization of Europium (Eu3+) Ions by Terbium (Tb3+) in Ceramics Based on Yttrium Stabilized Cubic Zirconium Dioxide

Optics and spectroscopy, 2023-04, Vol.131 (4), p.232-236

2023

Volltextzugriff (PDF)

Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2023-09, Vol.57 (9), p.405-409

2023

Volltextzugriff (PDF)

Subcontact layers of p-InGaAs with minimal resistance for photodetectors of high-power laser radiation

Journal of physics. Conference series, 2020-03, Vol.1482 (1), p.12036

2020

Volltextzugriff (PDF)

Effect of growth conditions at MOCVD on thickness uniformity of GaInAsP epilayers obtained on InP

Journal of physics. Conference series, 2018-12, Vol.1135 (1), p.12076

2018

Volltextzugriff (PDF)

Opportunities for agricultural industry in Russia

E3S Web of Conferences, 2021, Vol.282, p.7004

2021

Volltextzugriff (PDF)

Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy

Semiconductors (Woodbury, N.Y.), 2019-11, Vol.53 (11), p.1472-1478

2019

Volltextzugriff (PDF)

Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates

Technical physics letters, 2019-10, Vol.45 (10), p.1031-1034

2019

Volltextzugriff (PDF)

A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy

Technical physics letters, 2018-12, Vol.44 (12), p.1127-1129

2018

Volltextzugriff (PDF)

Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds

Semiconductors (Woodbury, N.Y.), 2017-01, Vol.51 (1), p.54-60

2017

Volltextzugriff (PDF)

Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis

Journal of electronic materials, 2010-06, Vol.39 (6), p.620-624

2010

Volltextzugriff (PDF)

Influence of gadolinium tantalum niobates doped with Eu3+ ions structural properties on luminescence spectrum features

Journal of luminescence, 2022-12, Vol.252, p.119281, Article 119281

2022

Volltextzugriff (PDF)

Growth of GaAs.sub.1-xBi.sub.x Layers by Molecular-Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2023-09, Vol.57 (9), p.405

2023

Volltextzugriff (PDF)

Optimization of the composition of the harvesting and transport complex

E3S Web of Conferences, 2021, Vol.282, p.7013

2021

Volltextzugriff (PDF)

Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy

Journal of crystal growth, 1996-02, Vol.158 (4), p.399-402

1996

Volltextzugriff (PDF)

Obtaining of crystals of polyelemental solid solutions of rare earth hexaborides

Technical physics letters, 2016, Vol.42 (1), p.1-3

2016

Volltextzugriff (PDF)

Formation of a crystallization courtyard in eutectic systems and crystal growth

Technical physics letters, 2014-03, Vol.40 (3), p.199-202

2014

Volltextzugriff (PDF)

Crystallization in the Al-Si, Al-Ge, and Al-Si-Ge systems at centrifugation

Technical physics, 2005-03, Vol.50 (3), p.341-346

2005

Volltextzugriff (PDF)

Electron probe microanalysis of heterostructures with nanolayers

Semiconductors (Woodbury, N.Y.), 2011-02, Vol.45 (2), p.260-264

2011

Volltextzugriff (PDF)

Liquid phase epitaxy of Ga1-xAlxSb1-yAsy/GaSb and the effect of strain on phase equilibria

Journal of crystal growth, 1984-01, Vol.66 (3), p.547-552

1984

Volltextzugriff (PDF)

Triple immiscibility in the Pb(+Ru)-Zn(+Sn) system

Technical physics letters, 2012-07, Vol.38 (7), p.627-629

2012

Volltextzugriff (PDF)

Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (12), p.1402-1405

2000

Volltextzugriff (PDF)

Health status of workers exposed to phthalate plasticizers in the manufacture of artificial leather and films based on PVC resins

Environmental health perspectives, 1973-01, Vol.3, p.175-178

1973

Volltextzugriff (PDF)

Nonequilibrium phase transition in quenched samples of Fe0.1TiTe2

Physics of the solid state, 1999-04, Vol.41 (4), p.613-616

1999

Volltextzugriff (PDF)

Non-destructive evaluation of depth, thickness and composition of single ZnCdSe nanolayers buried in II-VI heterostructures

Superlattices and microstructures, 2018-10, Vol.122, p.516-521

2018

Volltextzugriff (PDF)

1 – 25 von 2.523

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(2.072)
Mit Volltextzugriff
(1.541)

Publikationsform

5 weitere anzeigen...

Weniger anzeigen...

Sprache

4 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Characteristic Properties of Ceramics Luminescence Based on Cubic (ZR0.82–xHFxY0.l7Eu0.0l)O1.91

Sensitization of Europium (Eu3+) Ions by Terbium (Tb3+) in Ceramics Based on Yttrium Stabilized Cubic Zirconium Dioxide

Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy

Subcontact layers of p-InGaAs with minimal resistance for photodetectors of high-power laser radiation

Effect of growth conditions at MOCVD on thickness uniformity of GaInAsP epilayers obtained on InP

Opportunities for agricultural industry in Russia

Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy

Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates

A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy

Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds

Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis

Influence of gadolinium tantalum niobates doped with Eu3+ ions structural properties on luminescence spectrum features

Growth of GaAs.sub.1-xBi.sub.x Layers by Molecular-Beam Epitaxy

Optimization of the composition of the harvesting and transport complex

Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy

Obtaining of crystals of polyelemental solid solutions of rare earth hexaborides

Formation of a crystallization courtyard in eutectic systems and crystal growth

Crystallization in the Al-Si, Al-Ge, and Al-Si-Ge systems at centrifugation

Electron probe microanalysis of heterostructures with nanolayers

Liquid phase epitaxy of Ga1-xAlxSb1-yAsy/GaSb and the effect of strain on phase equilibria

Triple immiscibility in the Pb(+Ru)-Zn(+Sn) system

Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy

Health status of workers exposed to phthalate plasticizers in the manufacture of artificial leather and films based on PVC resins

Nonequilibrium phase transition in quenched samples of Fe0.1TiTe2

Non-destructive evaluation of depth, thickness and composition of single ZnCdSe nanolayers buried in II-VI heterostructures

Suchergebnisse filtern