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Nitride-based semiconductors for blue and green light-emitting devices

Nature (London), 1997-03, Vol.386 (6623), p.351-359

1997

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Origin of high hole concentrations in Mg‐doped GaN films

physica status solidi (b), 2017-08, Vol.254 (8), p.n/a

2017

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Luminescence from stacking faults in gallium nitride

Applied physics letters, 2005-01, Vol.86 (2), p.021908-021908-3

2005

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InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

Journal of applied physics, 2014-09, Vol.116 (9)

2014

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Microstructure and electronic properties of InGaN alloys

Phys. Status Solidi (b). Vol. 240, no. 2, pp. 273-284. 2003, 2003-11, Vol.240 (2), p.273-284

2003

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Y-specific microsatellites reveal an African subfamily in taurine (Bos taurus) cattle

Animal genetics, 2010-06, Vol.41 (3), p.232-241

2010

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Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy

Nanotechnology, 2014-05, Vol.25 (21)

2014

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Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

Applied physics letters, 2001-04, Vol.78 (18), p.2691-2693

2001

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Synthesis and luminescence properties of ZnO nanostructures produced by the sol–gel method

Journal of crystal growth, 2008-02, Vol.310 (3), p.599-603

2008

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The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

Applied physics letters, 2013-01, Vol.102 (4)

2013

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Novel semiconductors for sustainable solar energy technologies

Journal of physics. Conference series, 2019-02, Vol.1173 (1), p.12001

Ponce, F A

2019

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Atomic arrangement at the AlN/Si (111) interface

Applied physics letters, 2003-08, Vol.83 (5), p.860-862

2003

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The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays

Journal of crystal growth, 2013-12, Vol.384, p.55-60

2013

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Multiple paternal origins of domestic cattle revealed by Y-specific interspersed multilocus microsatellites

Heredity, 2010-12, Vol.105 (6), p.511-519

2010

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Prismatic stacking faults in epitaxially laterally overgrown GaN

Applied physics letters, 2006-04, Vol.88 (14), p.141912-141912-3

2006

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Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1−xN layers

Journal of applied physics, 2004-05, Vol.95 (9), p.4670-4674

2004

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High dislocation densities in high efficiency GaN-based light-emitting diodes

Applied physics letters, 1995-03, Vol.66 (10), p.1249-1251

1995

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Electrostatic energy profiles at nanometer-scale in group III nitride semiconductors using electron holography

Annalen der Physik, 2011-01, Vol.523 (1-2), p.75-86

Ponce, F.A.

2011

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Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

Applied physics letters, 2002-12, Vol.81 (25), p.4712-4714

2002

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Plasticity and optical properties of GaN under highly localized nanoindentation stress fields

Journal of applied physics, 2017-03, Vol.121 (12)

2017

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Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets

Applied physics letters, 2005-09, Vol.87 (13), p.131911-131911-3

2005

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Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells

Solar energy materials and solar cells, 2018-05, Vol.178 (C), p.240-248

2018

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Growth of free-standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure

Journal of crystal growth, 2008-06, Vol.310 (12), p.3131-3134

2008

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Spatial distribution of the luminescence in GaN thin films

Applied physics letters, 1996-01, Vol.68 (1), p.57-59

1996

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High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates

Thin solid films, 2011-02, Vol.519 (8), p.2508-2512

2011

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Nitride-based semiconductors for blue and green light-emitting devices

Origin of high hole concentrations in Mg‐doped GaN films

Luminescence from stacking faults in gallium nitride

InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

Microstructure and electronic properties of InGaN alloys

Y-specific microsatellites reveal an African subfamily in taurine (Bos taurus) cattle

Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy

Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

Synthesis and luminescence properties of ZnO nanostructures produced by the sol–gel method

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

Novel semiconductors for sustainable solar energy technologies

Atomic arrangement at the AlN/Si (111) interface

The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays

Multiple paternal origins of domestic cattle revealed by Y-specific interspersed multilocus microsatellites

Prismatic stacking faults in epitaxially laterally overgrown GaN

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1−xN layers

High dislocation densities in high efficiency GaN-based light-emitting diodes

Electrostatic energy profiles at nanometer-scale in group III nitride semiconductors using electron holography

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

Plasticity and optical properties of GaN under highly localized nanoindentation stress fields

Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets

Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells

Growth of free-standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure

Spatial distribution of the luminescence in GaN thin films

High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates

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