UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Nitride-based semiconductors for blue and green light-emitting devices

Nature (London), 1997-03, Vol.386 (6623), p.351-359

1997

Volltextzugriff (PDF)

Origin of high hole concentrations in Mg‐doped GaN films

physica status solidi (b), 2017-08, Vol.254 (8), p.n/a

2017

Volltextzugriff (PDF)

Luminescence from stacking faults in gallium nitride

Applied physics letters, 2005-01, Vol.86 (2), p.021908-021908-3

2005

Volltextzugriff (PDF)

InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

Journal of applied physics, 2014-09, Vol.116 (9)

2014

Volltextzugriff (PDF)

Microstructure and electronic properties of InGaN alloys

Phys. Status Solidi (b). Vol. 240, no. 2, pp. 273-284. 2003, 2003-11, Vol.240 (2), p.273-284

2003

Volltextzugriff (PDF)

Y-specific microsatellites reveal an African subfamily in taurine (Bos taurus) cattle

Animal genetics, 2010-06, Vol.41 (3), p.232-241

2010

Volltextzugriff (PDF)

Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy

Nanotechnology, 2014-05, Vol.25 (21)

2014

Volltextzugriff (PDF)

Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

Applied physics letters, 2001-04, Vol.78 (18), p.2691-2693

2001

Volltextzugriff (PDF)

Synthesis and luminescence properties of ZnO nanostructures produced by the sol–gel method

Journal of crystal growth, 2008-02, Vol.310 (3), p.599-603

2008

Volltextzugriff (PDF)

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

Applied physics letters, 2013-01, Vol.102 (4)

2013

Volltextzugriff (PDF)

Novel semiconductors for sustainable solar energy technologies

Journal of physics. Conference series, 2019-02, Vol.1173 (1), p.12001

Ponce, F A

2019

Volltextzugriff (PDF)

Atomic arrangement at the AlN/Si (111) interface

Applied physics letters, 2003-08, Vol.83 (5), p.860-862

2003

Volltextzugriff (PDF)

The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays

Journal of crystal growth, 2013-12, Vol.384, p.55-60

2013

Volltextzugriff (PDF)

Multiple paternal origins of domestic cattle revealed by Y-specific interspersed multilocus microsatellites

Heredity, 2010-12, Vol.105 (6), p.511-519

2010

Volltextzugriff (PDF)

Prismatic stacking faults in epitaxially laterally overgrown GaN

Applied physics letters, 2006-04, Vol.88 (14), p.141912-141912-3

2006

Volltextzugriff (PDF)

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1−xN layers

Journal of applied physics, 2004-05, Vol.95 (9), p.4670-4674

2004

Volltextzugriff (PDF)

High dislocation densities in high efficiency GaN-based light-emitting diodes

Applied physics letters, 1995-03, Vol.66 (10), p.1249-1251

1995

Volltextzugriff (PDF)

Electrostatic energy profiles at nanometer-scale in group III nitride semiconductors using electron holography

Annalen der Physik, 2011-01, Vol.523 (1-2), p.75-86

Ponce, F.A.

2011

Volltextzugriff (PDF)

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

Applied physics letters, 2002-12, Vol.81 (25), p.4712-4714

2002

Volltextzugriff (PDF)

Plasticity and optical properties of GaN under highly localized nanoindentation stress fields

Journal of applied physics, 2017-03, Vol.121 (12)

2017

Volltextzugriff (PDF)

Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets

Applied physics letters, 2005-09, Vol.87 (13), p.131911-131911-3

2005

Volltextzugriff (PDF)

Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells

Solar energy materials and solar cells, 2018-05, Vol.178 (C), p.240-248

2018

Volltextzugriff (PDF)

Growth of free-standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure

Journal of crystal growth, 2008-06, Vol.310 (12), p.3131-3134

2008

Volltextzugriff (PDF)

Spatial distribution of the luminescence in GaN thin films

Applied physics letters, 1996-01, Vol.68 (1), p.57-59

1996

Volltextzugriff (PDF)

High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates

Thin solid films, 2011-02, Vol.519 (8), p.2508-2512

2011

Volltextzugriff (PDF)

1 – 25 von 4.253

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(3.538)
Mit Volltextzugriff
(3.554)

Publikationsform

3 weitere anzeigen...

Weniger anzeigen...

Sprache

5 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(2.059)
Life Sciences & Biomedicine
(980)
Physical Sciences
(852)
Physics
(764)
Humans
(688)
Technology
(500)
Male
(429)
Female
(424)
Animals
(294)
Physics And Astronomy
(282)
Biological And Medical Sciences
(261)
Adult
(258)
Middle Aged
(253)
Materials Science
(252)
Physics, Applied
(252)
Elementary Particles
(240)
Quantum Field Theory
(239)
Quantum Field Theories
(237)
String Theory
(237)
Regular Article - Experimental Physics
(219)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Nitride-based semiconductors for blue and green light-emitting devices

Origin of high hole concentrations in Mg‐doped GaN films

Luminescence from stacking faults in gallium nitride

InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

Microstructure and electronic properties of InGaN alloys

Y-specific microsatellites reveal an African subfamily in taurine (Bos taurus) cattle

Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy

Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

Synthesis and luminescence properties of ZnO nanostructures produced by the sol–gel method

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

Novel semiconductors for sustainable solar energy technologies

Atomic arrangement at the AlN/Si (111) interface

The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays

Multiple paternal origins of domestic cattle revealed by Y-specific interspersed multilocus microsatellites

Prismatic stacking faults in epitaxially laterally overgrown GaN

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1−xN layers

High dislocation densities in high efficiency GaN-based light-emitting diodes

Electrostatic energy profiles at nanometer-scale in group III nitride semiconductors using electron holography

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

Plasticity and optical properties of GaN under highly localized nanoindentation stress fields

Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets

Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells

Growth of free-standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure

Spatial distribution of the luminescence in GaN thin films

High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates

Suchergebnisse filtern