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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016, p.1-1

2016

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Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

Integration by Selective Area Growth of Multiple Semi‐Insulating Buried Heterostructure‐Distributed Feedback Lasers with Optimized Performance Over 100 nm in the O‐Band

High Responsivity and High Power UTC and MUTC GaInAs-InP Photodiodes

Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

Monolithic Integration on InP of a DML and a Ring Resonator for Future Access Networks

Dynamic power and chirp measurements of a quantum dash semiconductor optical amplifier amplified picosecond pulses using a linear pulse characterization technique

High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications

Quantum-dash mode-locked lasers for tunable wavelength conversion on a 100 GHz frequency grid

AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

180-GHz Gain-Bandwidth Product Back-Side-Illuminated GaInAs-AlInAs APDs

Impact of Lithographic Grid Irregularity Assessed on Photonic Crystal Device Selectivity

Monolithic Integration of Buried-Heterostructures in a Generic Integrated Photonic Foundry Process

Introduction of defects during the dry etching of InP photonic structures: a cathodo-luminescence study

Nonlinear Effects Analysis in DBR Lasers: Applications to DBR-SOA and New Double Bragg DBR

Compact InP-Based DFB-EAM Enabling PAM-4 112 Gb/s Transmission Over 2 km

High responsivity coherent photonic receiver integrating an SOA, a 90° hybrid, and high speed UTC photodiodes

Record Gain x Bandwidth (6.1 THz) Monolithically Integrated SOA-UTC Photoreceiver for 100-Gbit/s Applications

Reflective Electroabsorption Modulators for Beyond 25 Gb/s Colorless Transmissions

Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core

Separate Error-Free Transmission of Eight Channels at 10 Gb/s Using Comb Generation in a Quantum-Dash-Based Mode-Locked Laser

High Gain x Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes

Widely Tunable Photonic Crystal Lasers

25 Gb/s Colorless Transmitter Based on Reflective Electroabsorption Modulator for Ultra-Dense WDM-PON Application

Broadly and finely tunable hybrid silicon laser with nanosecond-scale switching speed

Evidence of quantum confined stark effect due to doping profile in InAsP/InP quantum well structures and its modification by ion bombardment

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