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Deep traps in GaN-based structures as affecting the performance of GaN devices

Materials science & engineering. R, Reports : a review journal, 2015-08, Vol.94, p.1-56

2015

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Radiation damage effects in Ga2O3 materials and devices

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019, Vol.7 (1), p.1-24

2019

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Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

Applied physics letters, 2018-01, Vol.112 (3)

2018

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Radiation effects in GaN materials and devices

Journal of materials chemistry. C, Materials for optical and electronic devices, 2013-01, Vol.1 (5), p.877-887

2013

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Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

Journal of applied physics, 2017-09, Vol.122 (11)

2017

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Review of radiation damage in GaN-based materials and devices

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-09, Vol.31 (5)

2013

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Halide Vapor Phase Epitaxy of In2O3 and (In1−xGax)2O3 on Sapphire Substrates and GaN/Al2O3 Templates

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (3), p.n/a

2021

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Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Journal of applied physics, 2019-09, Vol.126 (12)

2019

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Dislocations introduced in n-GaN at room temperature cause conductivity inversion

Journal of alloys and compounds, 2021-10, Vol.877, p.160281, Article 160281

2021

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Decline in small mammal species richness in coastal‐central California, 1997–2013

Ecology and evolution, 2023-12, Vol.13 (12), p.e10611-n/a

2023

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Cell‐to‐cell cross‐talk between mesenchymal stem cells and cardiomyocytes in co‐culture

Journal of cellular and molecular medicine, 2008-09, Vol.12 (5a), p.1622-1631

2008

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Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy

Nanomaterials (Basel, Switzerland), 2023-03, Vol.13 (7), p.1214

2023

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Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Journal of applied physics, 2016-01, Vol.119 (1)

2016

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Multiple coping strategies maintain stability of a small mammal population in a resource‐restricted environment

Ecology and evolution, 2021-09, Vol.11 (18), p.12529-12541

2021

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Design and testing of high-speed interconnects for superconducting multi-chip modules

Superconductor science & technology, 2012-10, Vol.25 (10), p.105012-1-10

2012

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Movement of basal plane dislocations in GaN during electron beam irradiation

Applied physics letters, 2015-03, Vol.106 (13)

2015

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Lifetime-limiting defects in n − 4H-SiC epilayers

Applied physics letters, 2006-01, Vol.88 (5), p.052110-052110-3

2006

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Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs

Crystals (Basel), 2023-09, Vol.13 (9), p.1400

2023

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Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-11, Vol.33 (6)

2015

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Newly Industrialized Countries: Is There an Alternative to the Golden Billion?

IOP conference series. Earth and environmental science, 2021-03, Vol.666 (6), p.62093

2021

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Electrical properties of bulk semi-insulating β-Ga2O3 (Fe)

Applied physics letters, 2018-10, Vol.113 (14)

2018

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Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

Journal of alloys and compounds, 2014-03, Vol.589, p.507-512

2014

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Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si

APL materials, 2018-09, Vol.6 (9), p.096102-096102-10

2018

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Electrical characteristics of Au and Ag Schottky contacts on n-ZnO

Applied physics letters, 2003-08, Vol.83 (8), p.1575-1577

2003

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Experience in treatment of newly diagnosed multiple myeloma patients with renal failure required dialysis

Annals of oncology, 2018-10, Vol.29, p.viii368-viii369

2018

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Deep traps in GaN-based structures as affecting the performance of GaN devices

Radiation damage effects in Ga2O3 materials and devices

Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

Radiation effects in GaN materials and devices

Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

Review of radiation damage in GaN-based materials and devices

Halide Vapor Phase Epitaxy of In2O3 and (In1−xGax)2O3 on Sapphire Substrates and GaN/Al2O3 Templates

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Dislocations introduced in n-GaN at room temperature cause conductivity inversion

Decline in small mammal species richness in coastal‐central California, 1997–2013

Cell‐to‐cell cross‐talk between mesenchymal stem cells and cardiomyocytes in co‐culture

Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy

Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Multiple coping strategies maintain stability of a small mammal population in a resource‐restricted environment

Design and testing of high-speed interconnects for superconducting multi-chip modules

Movement of basal plane dislocations in GaN during electron beam irradiation

Lifetime-limiting defects in n − 4H-SiC epilayers

Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs

Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance

Newly Industrialized Countries: Is There an Alternative to the Golden Billion?

Electrical properties of bulk semi-insulating β-Ga2O3 (Fe)

Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si

Electrical characteristics of Au and Ag Schottky contacts on n-ZnO

Experience in treatment of newly diagnosed multiple myeloma patients with renal failure required dialysis

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