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Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

Applied physics letters, 2018-01, Vol.112 (3)

2018

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Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

Journal of applied physics, 2017-09, Vol.122 (11)

2017

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Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Journal of applied physics, 2019-09, Vol.126 (12)

2019

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Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Journal of applied physics, 2016-01, Vol.119 (1)

2016

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Movement of basal plane dislocations in GaN during electron beam irradiation

Applied physics letters, 2015-03, Vol.106 (13)

2015

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Design and testing of high-speed interconnects for superconducting multi-chip modules

Superconductor science & technology, 2012-10, Vol.25 (10), p.105012-1-10

2012

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Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

Journal of alloys and compounds, 2014-03, Vol.589, p.507-512

2014

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Lifetime-limiting defects in n − 4H-SiC epilayers

Applied physics letters, 2006-01, Vol.88 (5), p.052110-052110-3

2006

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EBIC investigations of dislocations in ELOG GaN

Physica status solidi. C, 2015-08, Vol.12 (8), p.1132-1135

2015

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Electrical properties of bulk semi-insulating β-Ga2O3 (Fe)

Applied physics letters, 2018-10, Vol.113 (14)

2018

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Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching

Journal of applied physics, 2012-10, Vol.112 (7)

2012

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Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth

Journal of applied physics, 2013-02, Vol.113 (8)

2013

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Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

Applied physics letters, 2018-08, Vol.113 (9)

2018

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Electrical characteristics of Au and Ag Schottky contacts on n-ZnO

Applied physics letters, 2003-08, Vol.83 (8), p.1575-1577

2003

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Experimental estimation of electron–hole pair creation energy in β-Ga2O3

Applied physics letters, 2021-05, Vol.118 (20)

2021

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Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra

Applied physics letters, 2019-07, Vol.115 (3)

2019

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On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors

Journal of alloys and compounds, 2021-10, Vol.879, p.160394, Article 160394

2021

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Observation of temperature-dependent capture cross section for main deep-levels in β-Ga2O3

Journal of applied physics, 2024-07, Vol.136 (2)

2024

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Anisotropy of hydrogen plasma effects in bulk n-type β-Ga2O3

Journal of applied physics, 2020-05, Vol.127 (17)

2020

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Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation

Applied physics letters, 2018-12, Vol.113 (26)

2018

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On the relation between mobile ion kinetics, device design, and doping in double-cation perovskite solar cells

Applied physics letters, 2021-03, Vol.118 (9)

2021

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Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

Journal of applied physics, 2024-04, Vol.135 (16)

2024

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Tuning electrical properties in Ga2O3 polymorphs induced with ion beams

Journal of applied physics, 2023-03, Vol.133 (9)

2023

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Betavoltaic battery performance: Comparison of modeling and experiment

Applied radiation and isotopes, 2018-07, Vol.137, p.184-189

2018

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Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers

Journal of physics. D, Applied physics, 2020-12, Vol.53 (49)

2020

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Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Movement of basal plane dislocations in GaN during electron beam irradiation

Design and testing of high-speed interconnects for superconducting multi-chip modules

Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

Lifetime-limiting defects in n − 4H-SiC epilayers

EBIC investigations of dislocations in ELOG GaN

Electrical properties of bulk semi-insulating β-Ga2O3 (Fe)

Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching

Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

Electrical characteristics of Au and Ag Schottky contacts on n-ZnO

Experimental estimation of electron–hole pair creation energy in β-Ga2O3

Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra

On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors

Observation of temperature-dependent capture cross section for main deep-levels in β-Ga2O3

Anisotropy of hydrogen plasma effects in bulk n-type β-Ga2O3

Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation

On the relation between mobile ion kinetics, device design, and doping in double-cation perovskite solar cells

Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

Tuning electrical properties in Ga2O3 polymorphs induced with ion beams

Betavoltaic battery performance: Comparison of modeling and experiment

Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers

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