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Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography

Solar energy materials and solar cells, 2010-10, Vol.94 (10), p.1845-1848

2010

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Effect of neutron irradiation on the capacitance hysteresis in GaAs Schottky diodes with self-assembled InAs quantum dots

Journal of physics. D, Applied physics, 2013-08, Vol.46 (32), p.325102-1-4

2013

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Growth and properties of crystalline barium oxide on the GaAs(100) substrate

Applied physics letters, 2013-11, Vol.103 (19)

2013

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The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100)

Nanotechnology, 2012-03, Vol.23 (11), p.115702-1-6

2012

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Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

Applied physics letters, 2011-09, Vol.99 (10)

2011

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High Efficiency Dilute Nitride Solar Cells: Simulations Meet Experiments

Journal of Green Engineering, 2016, Vol.5 (4), p.113-132

2016

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Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping

Applied physics letters, 2009-02, Vol.94 (7), p.072105-072105-3

2009

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Dislocation-induced electron and hole levels in InAs quantum-dot Schottky diodes

Physica. E, Low-dimensional systems & nanostructures, 2010-09, Vol.42 (10), p.2610-2613

2010

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Tuneable Nonlinear Spin Response in a Nonmagnetic Semiconductor

Physical review applied, 2023-06, Vol.19 (6), Article 064048

2023

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Effects of thinning and heating for TiO2/AlInP junctions

Journal of electron spectroscopy and related phenomena, 2015-11, Vol.205, p.6-9

2015

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Properties of the SiO 2 - and SiN x -capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

Applied physics letters, 2011-09, Vol.99 (10), p.102105-102105-3

2011

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Surface doping of GaxIn1−xAs semiconductor crystals with magnesium

Materialia, 2018-10, Vol.2, p.33-36

2018

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Ultrathin ( 1 × 2 ) -Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

Applied physics letters, 2011-06, Vol.98 (23), p.231908-231908-3

2011

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Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

Applied physics letters, 2008-08, Vol.93 (5), p.052102-052102-3

2008

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An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study

Applied surface science, 2008-12, Vol.255 (5), p.2985-2988

2008

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Surface doping of Ga In1−As semiconductor crystals with magnesium

Materialia, 2018-10, Vol.2, p.33-36

2018

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Effects of ( NH 4 ) 2 S and NH 4 OH surface treatments prior to SiO 2 capping and thermal annealing on 1.3 μ m GaInAsN/GaAs quantum well structures

Applied physics letters, 2010-09, Vol.97 (11), p.111109-111109-3

2010

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Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 μm GaInAsN/GaAs quantum well structures

Applied physics letters, 2010-09, Vol.97 (11)

2010

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Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-O

Physical review. B, Condensed matter and materials physics, 2014-07, Vol.90 (4), Article 045312

2014

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Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

Physical review. B, Condensed matter and materials physics, 2015-10, Vol.92 (16), Article 165311

2015

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Dislocation-induced electron and hole levels in InAs quantum-dot Schottlcy diodes

Physica. E, low-dimentional systems and nanostructures, 2010, Vol.42 (10), p.2610-2613

2010

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Back grating optimization for light trapping in thin-film quantum dot solar cells

IET Conference Proceedings, 2017

2017

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Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells

Nanoscale research letters, 2014-02, Vol.9 (1), p.80-80, Article 80

2014

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Removal of strain relaxation induced defects by flushing of InAs quantum dots

Journal of physics. D, Applied physics, 2012-09, Vol.45 (36), p.365107-1-5

2012

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Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography

Effect of neutron irradiation on the capacitance hysteresis in GaAs Schottky diodes with self-assembled InAs quantum dots

Growth and properties of crystalline barium oxide on the GaAs(100) substrate

The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100)

Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

High Efficiency Dilute Nitride Solar Cells: Simulations Meet Experiments

Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping

Dislocation-induced electron and hole levels in InAs quantum-dot Schottky diodes

Tuneable Nonlinear Spin Response in a Nonmagnetic Semiconductor

Effects of thinning and heating for TiO2/AlInP junctions

Properties of the SiO 2 - and SiN x -capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

Surface doping of GaxIn1−xAs semiconductor crystals with magnesium

Ultrathin ( 1 × 2 ) -Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study

Surface doping of Ga In1−As semiconductor crystals with magnesium

Effects of ( NH 4 ) 2 S and NH 4 OH surface treatments prior to SiO 2 capping and thermal annealing on 1.3 μ m GaInAsN/GaAs quantum well structures

Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 μm GaInAsN/GaAs quantum well structures

Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-O

Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

Dislocation-induced electron and hole levels in InAs quantum-dot Schottlcy diodes

Back grating optimization for light trapping in thin-film quantum dot solar cells

Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells

Removal of strain relaxation induced defects by flushing of InAs quantum dots

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