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Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers

CrystEngComm, 2020-02, Vol.22 (7), p.1239-125

2020

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Erratum: “Electrical characterization and transport model of n-gallium nitride nanowires” [Appl. Phys. Lett. 107, 082103 (2015)]

Applied physics letters, 2016-01, Vol.108 (4)

2016

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Coronary artery aneurysms, insights from the international coronary artery aneurysm registry (CAAR)

International journal of cardiology, 2020-01, Vol.299, p.49-55

2020

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Clopidogrel pre-treatment in stable angina: for all patients >6 h before elective coronary angiography or only for angiographically selected patients a few minutes before PCI? A randomized multicentre trial PRAGUE-8

European heart journal, 2008-06, Vol.29 (12), p.1495-1503

2008

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Fractional Flow Reserve Versus Instantaneous Wave-Free Ratio in Assessment of Lesion Hemodynamic Significance and Explanation of their Discrepancies. International, Multicenter and Prospective Trial: The FiGARO Study

Journal of the American Heart Association, 2022-05, Vol.11 (9), p.e021490-e021490

2022

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Successful treatment of a mycotic pseudoaneurysm of the brachial artery with percutaneous ultrasound-guided thrombin injection and antibiotics

VASA, 2010-05, Vol.39 (2), p.181-183

2010

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1.3- \mu m GaNAsSb-GaAs UTC-Photodetectors for 10-Gigabit Ethernet Links

IEEE photonics technology letters, 2009-07, Vol.21 (13), p.911-913

2009

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Polymorphisms in Resistin ( RETN ) and Resistin-like Beta ( RETNLB ) and Risk of Asthma in Independent Populations of African Descent

Journal of allergy and clinical immunology, 2009-02, Vol.123 (2), p.S166-S166

2009

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Electrical characterization and transport model of n-gallium nitride nanowires

Applied physics letters, 2015-08, Vol.107 (8)

2015

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Scalable high-current density RTDs with low series resistance

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4

2010

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Fabrication of transferred-substrate HBT with simple technology

International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.508-511

2005

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High-speed picosecond pulse response GaNAsSb p - i - n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy

Applied physics letters, 2007-04, Vol.90 (18), p.183515-183515-3

2007

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Multigigabit 1.3μm GaNAsSb∕GaAs Photodetectors

Applied physics letters, 2008-07, Vol.93 (3)

2008

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Design and modelling of a III/V mobile-gate with optical input on a silicon substrate

International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.17-20

2005

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Multigigabit 1.3 μ m Ga N As Sb ∕ Ga As Photodetectors

Applied physics letters, 2008-07, Vol.93 (3), p.033509-033509-3

2008

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High performance III/V RTD and PIN diode on a silicon (001) substrate

Applied physics. A, Materials science & processing, 2007-06, Vol.87 (3), p.539-544

2007

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14-GHz GaNAsSb Unitraveling-Carrier 1.3-[Formula Omitted] Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy

IEEE electron device letters, 2009-06, Vol.30 (6), p.590

2009

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14-GHz GaNAsSb Unitraveling-Carrier 1.3-muhbox{m} Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy

IEEE electron device letters, 2009-06, Vol.30 (6), p.590-592

2009

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1.3- mu m GaNAsSbaGaAs UTC-Photodetectors for 10-Gigabit Ethernet Links

IEEE photonics technology letters, 2009-01, Vol.21 (13)

2009

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14-GHz GaNAsSb Unitraveling-Carrier 1.3- muhbox m Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy

IEEE electron device letters, 2009-01, Vol.30 (6)

2009

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Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antenna

70th Device Research Conference, 2012, p.77-78

2012

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High performance III/V RTD and PIN diode on a silicon (001) substrate: From surface science to nanoscale devices

Applied physics. A, Materials science & processing, 2007, Vol.87 (3), p.539-544

2007

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Wavelength-selective receiver for simultaneous λ=1.3 µm and λ=1.55 µm RF optical transmission

2009 IEEE International Conference on Indium Phosphide & Related Materials, 2009, p.295-297

2009

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Recent Progress in Dilute Nitride-antimonide Materials for Photonic and Electronic Applications

ECS transactions, 2009, Vol.19 (3), p.5-29

2009

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Monostable-Bistable Threshold Logic Elements in a fully complementary optical receiver circuit for high frequency applications

2008 20th International Conference on Indium Phosphide and Related Materials, 2008, p.1-4

2008

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Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers

Erratum: “Electrical characterization and transport model of n-gallium nitride nanowires” [Appl. Phys. Lett. 107, 082103 (2015)]

Coronary artery aneurysms, insights from the international coronary artery aneurysm registry (CAAR)

Clopidogrel pre-treatment in stable angina: for all patients >6 h before elective coronary angiography or only for angiographically selected patients a few minutes before PCI? A randomized multicentre trial PRAGUE-8

Fractional Flow Reserve Versus Instantaneous Wave-Free Ratio in Assessment of Lesion Hemodynamic Significance and Explanation of their Discrepancies. International, Multicenter and Prospective Trial: The FiGARO Study

Successful treatment of a mycotic pseudoaneurysm of the brachial artery with percutaneous ultrasound-guided thrombin injection and antibiotics

1.3- \mu m GaNAsSb-GaAs UTC-Photodetectors for 10-Gigabit Ethernet Links

Polymorphisms in Resistin ( RETN ) and Resistin-like Beta ( RETNLB ) and Risk of Asthma in Independent Populations of African Descent

Electrical characterization and transport model of n-gallium nitride nanowires

Scalable high-current density RTDs with low series resistance

Fabrication of transferred-substrate HBT with simple technology

High-speed picosecond pulse response GaNAsSb p - i - n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy

Multigigabit 1.3μm GaNAsSb∕GaAs Photodetectors

Design and modelling of a III/V mobile-gate with optical input on a silicon substrate

Multigigabit 1.3 μ m Ga N As Sb ∕ Ga As Photodetectors

High performance III/V RTD and PIN diode on a silicon (001) substrate

14-GHz GaNAsSb Unitraveling-Carrier 1.3-[Formula Omitted] Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy

14-GHz GaNAsSb Unitraveling-Carrier 1.3-muhbox{m} Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy

1.3- mu m GaNAsSbaGaAs UTC-Photodetectors for 10-Gigabit Ethernet Links

14-GHz GaNAsSb Unitraveling-Carrier 1.3- muhbox m Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy

Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antenna

High performance III/V RTD and PIN diode on a silicon (001) substrate: From surface science to nanoscale devices

Wavelength-selective receiver for simultaneous λ=1.3 µm and λ=1.55 µm RF optical transmission

Recent Progress in Dilute Nitride-antimonide Materials for Photonic and Electronic Applications

Monostable-Bistable Threshold Logic Elements in a fully complementary optical receiver circuit for high frequency applications

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