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Dividing ASEAN and Conquering the South China Sea: China’s Financial Power Projection

Contemporary Southeast Asia, 2018-12, Vol.40 (3), p.539-541

Poling, Gregory B.

2018

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Wafer-scale GaN HEMT performance enhancement by diamond substrate integration

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.871-874

2014

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Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Solid-state electronics, 2013-02, Vol.80, p.19-22

2013

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Interprofessional Research Guidelines for Health Care Students

Nursing education perspectives, 2016-11, Vol.37 (6), p.345-346

2016

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FROM ORBIT TO OCEAN

Naval War College review, 2021-01, Vol.74 (1), p.62-82

Poling, Gregory B

2021

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FROM ORBIT TO OCEAN: Fixing Southeast Asia's Remote-Sensing Blind Spots

Naval War College review, 2021-01, Vol.74 (1), p.58

Poling, Gregory B

2021

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FROM ORBIT TO OCEAN: Fixing Southeast Asia’s Remote-Sensing Blind Spots

Naval War College review, 2021-01, Vol.74 (1), p.57-77

Poling, Gregory B.

2021

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Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation

Microelectronics and reliability, 2017-01, Vol.68, p.13-20

2017

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Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Solid-state electronics, 2013-02, Vol.80, p.19-22

2013

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Dividing Asean and Conquering the South China Sea: China's Financial Power Projection by Daniel C. O'Neill (review)

Contemporary Southeast Asia, 2018, Vol.40 (3), p.539-541

Poling, Gregory B

2018

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Performance of commercial foundry-level AlGaN/GaN HEMTs after hot electron stressing

Microelectronics and reliability, 2015-07, Vol.55 (8), p.1187-1191

2015

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Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN

Microelectronics and reliability, 2016-01, Vol.56, p.45-48

2016

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Evidence for causality between GaN RF HEMT degradation and the E sub(C)-0.57 eV trap in GaN

Microelectronics and reliability, 2016-01, Vol.56, p.45-48

2016

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Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps

Microelectronics and reliability, 2015-11, Vol.55 (11), p.2258-2262

2015

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Cation diffusion and ionic conductivity in soda-lime silicate glasses

Physical chemistry chemical physics : PCCP, 2005-06, Vol.7 (11), p.2279-2286

2005

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Evidence for causality between GaN RF HEMT degradation and the EC-0.57eV trap in GaN

Microelectronics and reliability, 2016-01, Vol.56, p.45-48

2016

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1.8 MeV Proton Testing of Thermally Stabilized GaN HEMT RF Power Devices in Three Operational Modes

2017 IEEE Radiation Effects Data Workshop (REDW), 2017, p.1-5

2017

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Vapor pressure prediction and correlation from the triple point to the critical point

Fluid phase equilibria, 1996-03, Vol.116 (1), p.102-109

Poling, Bruce E.

1996

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Direct observation of 0.57 eV trap-related RF output power reduction in AIGaN/GaN high electron mobility transistors

Solid-state electronics, 2013, Vol.80, p.19-22

2013

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Photoperiod and Temperature Effects on Flower and Runner Development in Day-Neutral, Junebearing, and Everbearing Strawberries

Journal of the American Society for Horticultural Science, 1984-05, Vol.109 (3), p.396-400

1984

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Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

2010 International Electron Devices Meeting, 2010, p.20.1.1-20.1.4

2010

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Vapor-liquid equilibrium data for the NH3-H2O system and its description with a modified cubic equation of state

Journal of chemical and engineering data, 1991-04, Vol.36 (2), p.202-208

1991

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Reliability testing of AlGaN/GaN HEMTs under multiple stressors

2011 International Reliability Physics Symposium, 2011, p.CD.2.1-CD.2.5

2011

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Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011, p.1-4

2011

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Product distributions in the CO2-NH3-H2O system from liquid conductivity measurements

Industrial & engineering chemistry research, 1992-09, Vol.31 (9), p.2209-2215

1992

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Dividing ASEAN and Conquering the South China Sea: China’s Financial Power Projection

Wafer-scale GaN HEMT performance enhancement by diamond substrate integration

Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Interprofessional Research Guidelines for Health Care Students

FROM ORBIT TO OCEAN

FROM ORBIT TO OCEAN: Fixing Southeast Asia's Remote-Sensing Blind Spots

FROM ORBIT TO OCEAN: Fixing Southeast Asia’s Remote-Sensing Blind Spots

Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Dividing Asean and Conquering the South China Sea: China's Financial Power Projection by Daniel C. O'Neill (review)

Performance of commercial foundry-level AlGaN/GaN HEMTs after hot electron stressing

Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN

Evidence for causality between GaN RF HEMT degradation and the E sub(C)-0.57 eV trap in GaN

Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps

Cation diffusion and ionic conductivity in soda-lime silicate glasses

Evidence for causality between GaN RF HEMT degradation and the EC-0.57eV trap in GaN

1.8 MeV Proton Testing of Thermally Stabilized GaN HEMT RF Power Devices in Three Operational Modes

Vapor pressure prediction and correlation from the triple point to the critical point

Direct observation of 0.57 eV trap-related RF output power reduction in AIGaN/GaN high electron mobility transistors

Photoperiod and Temperature Effects on Flower and Runner Development in Day-Neutral, Junebearing, and Everbearing Strawberries

Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

Vapor-liquid equilibrium data for the NH3-H2O system and its description with a modified cubic equation of state

Reliability testing of AlGaN/GaN HEMTs under multiple stressors

Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation

Product distributions in the CO2-NH3-H2O system from liquid conductivity measurements

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