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Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

Applied physics letters, 2010-02, Vol.96 (7), p.072107-072107-3

2010

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AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

IEEE electron device letters, 2010-01, Vol.31 (1), p.11-13

2010

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Diamond overgrown InAlN/GaN HEMT

Diamond and related materials, 2011-04, Vol.20 (4), p.604-608

2011

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Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC

Journal of crystal growth, 2013-05, Vol.370, p.282-287

2013

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Room-temperature terahertz emission from nanometer field-effect transistors

Applied physics letters, 2006-04, Vol.88 (14), p.141906-1-3

2006

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Surface potential of n - and p -type GaN measured by Kelvin force microscopy

Applied physics letters, 2008-11, Vol.93 (21), p.212107-212107-3

2008

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Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN

Journal of physics. D, Applied physics, 2010-02, Vol.43 (5), p.055406

2010

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Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1662-1666

2015

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Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs

Solid-state electronics, 2015-11, Vol.113, p.15-21

2015

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Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN AlN GaN heterostructures

Semiconductor science and technology, 2015-09, Vol.30 (10), p.105034

2015

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Annealed Ti/Cr/Al contacts on n-GaN

Vacuum, 2014-02, Vol.100, p.46-49

2014

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Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2248-2252

2014

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Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

Solid-state electronics, 2012, Vol.67 (1), p.74-78

2012

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Characteristics of Al2O3/AlInN/GaN MOSHEMT

Electronics letters, 2007, Vol.43 (12), p.691-692

2007

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Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

AIP advances, 2014-12, Vol.4 (12), p.127101-127101-13

2014

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AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

Opto-electronics review, 2015-09, Vol.23 (3), p.195-199

2015

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Fundamentals and practice of metal contacts to wide band gap semiconductor devices

Crystal research and technology (1979), 2012-03, Vol.47 (3), p.261-272

2012

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High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC

IEEE electron device letters, 2009-08, Vol.30 (8), p.808-810

2009

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AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Journal of applied physics, 2010, Vol.107 (2), p.024504-024504-4

2010

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Thermal oxidation of lattice matched InAlN/GaN heterostructures

Physica status solidi. C, 2010-01, Vol.7 (1), p.13-16

2010

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Terahertz imaging using high electron mobility transistors as plasma wave detectors

Physica status solidi. C, 2009-12, Vol.6 (12), p.2855-2857

2009

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LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

Physica status solidi. C, 2010-05, Vol.7 (5), p.1317-1324

2010

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Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

Thin solid films, 2008-10, Vol.516 (23), p.8447-8452

2008

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GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

Journal of crystal growth, 2008-11, Vol.310 (23), p.5232-5236

2008

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Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

Diamond overgrown InAlN/GaN HEMT

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC

Room-temperature terahertz emission from nanometer field-effect transistors

Surface potential of n - and p -type GaN measured by Kelvin force microscopy

Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN AlN GaN heterostructures

Annealed Ti/Cr/Al contacts on n-GaN

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs

Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

Characteristics of Al2O3/AlInN/GaN MOSHEMT

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

Fundamentals and practice of metal contacts to wide band gap semiconductor devices

High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Thermal oxidation of lattice matched InAlN/GaN heterostructures

Terahertz imaging using high electron mobility transistors as plasma wave detectors

LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

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