UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments

IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.1022-1030

2014

Volltextzugriff (PDF)

Pump-controlled directional light emission from random lasers

Physical review letters, 2013-07, Vol.111 (2), p.023902-023902, Article 023902

2013

Volltextzugriff (PDF)

Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs

IEEE electron device letters, 2013-09, Vol.34 (9), p.1112-1114

2013

Volltextzugriff (PDF)

Self-Heating in GaN Transistors Designed for High-Power Operation

IEEE transactions on electron devices, 2014-10, Vol.61 (10), p.3429-3434

2014

Volltextzugriff (PDF)

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1687-1691

2015

Volltextzugriff (PDF)

Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN17-08JN17-4

2013

Volltextzugriff (PDF)

Effect of Carbon Doping on Charging/Discharging Dynamics and Leakage Behavior of Carbon-Doped GaN

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5314-5321

2018

Volltextzugriff (PDF)

The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers

Applied physics letters, 2017-07, Vol.111 (3)

2017

Volltextzugriff (PDF)

Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3087-3093

2022

Volltextzugriff (PDF)

I – V Hysteresis in ESD Protection SCR Due to Jumping Between Bulk and Surface Current Paths

IEEE transactions on electron devices, 2024, p.1-6

2024

Volltextzugriff (PDF)

Evidence‐Based Understanding of Lateral Hole Transport During OFF‐State Stress Completing Dynamic GaN‐on‐Si Buffer Charging Model

Physica status solidi. A, Applications and materials science, 2024-11, Vol.221 (21), p.n/a

2024

Volltextzugriff (PDF)

Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors

Japanese Journal of Applied Physics, 2012-05, Vol.51 (5), p.054102-054102-5

2012

Volltextzugriff (PDF)

3-D TCAD Methodology for Simulating Double-Hysteresis Filamentary I-V Behavior and Holding Current in ESD Protection SCRs

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4214-4222

2021

Volltextzugriff (PDF)

Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors

Microelectronics and reliability, 2019-09, Vol.100-101, p.113331, Article 113331

2019

Volltextzugriff (PDF)

Analysis of ESD Behavior of Stacked nMOSFET RF Switches in Bulk Technology

IEEE transactions on electron devices, 2018-03, Vol.65 (3), p.829-837

2018

Volltextzugriff (PDF)

Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN

physica status solidi (b), 2019-06, Vol.256 (6), p.n/a

2019

Volltextzugriff (PDF)

Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using ZrO2 or HfO2

IEEE transactions on electron devices, 2008-03, Vol.55 (3), p.937-941

2008

Volltextzugriff (PDF)

Avalanche Breakdown Delay in ESD Protection Diodes

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2470-2476

2010

Volltextzugriff (PDF)

ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1471-1475

2015

Volltextzugriff (PDF)

HMM–TLP correlation for system-efficient ESD design

Microelectronics and reliability, 2012-06, Vol.52 (6), p.1012-1019

2012

Volltextzugriff (PDF)

Experimental and Theoretical Analyses of the Electrical SOA of Rugged p-Channel LDMOS

IEEE electron device letters, 2010-12, Vol.31 (12), p.1440-1442

2010

Volltextzugriff (PDF)

Accurate Temperature Measurements of DMOS Power Transistors up to Thermal Runaway by Small Embedded Sensors

IEEE transactions on semiconductor manufacturing, 2012-08, Vol.25 (3), p.294-302

2012

Volltextzugriff (PDF)

Enhancement of the Electrical Safe Operating Area of Integrated DMOS Transistors With Respect to High-Energy Short Duration Pulses

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.3044-3049

2010

Volltextzugriff (PDF)

HMMaTLP correlation for system-efficient ESD design

Microelectronics and reliability, 2012-06, Vol.52 (6), p.1012-1019

2012

Volltextzugriff (PDF)

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

IEEE electron device letters, 2009-10, Vol.30 (10), p.1030-1032

2009

Volltextzugriff (PDF)

1 – 25 von 79

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(62)
Mit Volltextzugriff
(71)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(59)
Technology
(51)
Engineering
(48)
Engineering, Electrical & Electronic
(48)
Physical Sciences
(45)
Physics
(45)
Physics, Applied
(38)
Exact Sciences And Technology
(21)
Applied Sciences
(19)
Devices
(19)
Electronics
(19)
Transistors
(19)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(17)
Semiconductor Devices
(16)
Electrostatic Discharge
(15)
Electrostatic Discharges
(13)
Nanoscience & Nanotechnology
(13)
Science & Technology - Other Topics
(13)
Hemts
(11)
Gallium Nitride
(10)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 7 Tagen
(1)
... seit 30 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments

Pump-controlled directional light emission from random lasers

Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs

Self-Heating in GaN Transistors Designed for High-Power Operation

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions

Effect of Carbon Doping on Charging/Discharging Dynamics and Leakage Behavior of Carbon-Doped GaN

The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers

Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants

I – V Hysteresis in ESD Protection SCR Due to Jumping Between Bulk and Surface Current Paths

Evidence‐Based Understanding of Lateral Hole Transport During OFF‐State Stress Completing Dynamic GaN‐on‐Si Buffer Charging Model

Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors

3-D TCAD Methodology for Simulating Double-Hysteresis Filamentary I-V Behavior and Holding Current in ESD Protection SCRs

Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors

Analysis of ESD Behavior of Stacked nMOSFET RF Switches in Bulk Technology

Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN

Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using ZrO2 or HfO2

Avalanche Breakdown Delay in ESD Protection Diodes

ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique

HMM–TLP correlation for system-efficient ESD design

Experimental and Theoretical Analyses of the Electrical SOA of Rugged p-Channel LDMOS

Accurate Temperature Measurements of DMOS Power Transistors up to Thermal Runaway by Small Embedded Sensors

Enhancement of the Electrical Safe Operating Area of Integrated DMOS Transistors With Respect to High-Energy Short Duration Pulses

HMMaTLP correlation for system-efficient ESD design

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

Suchergebnisse filtern