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Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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Review of bias-temperature instabilities at the III-N/dielectric interface

Microelectronics and reliability, 2018-03, Vol.82, p.62-83

2018

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Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

Applied physics letters, 2014-07, Vol.105 (3)

2014

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On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices

Journal of applied physics, 2024-01, Vol.135 (2)

2024

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Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors

Applied physics letters, 2023-06, Vol.122 (24)

2023

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Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

Journal of applied physics, 2015-01, Vol.117 (2)

2015

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Low-frequency noise characterization of single CuO nanowire gas sensor devices

Applied physics letters, 2015-09, Vol.107 (12)

2015

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Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires

Applied physics letters, 2016-11, Vol.109 (21)

2016

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Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs

Applied physics letters, 2017-04, Vol.110 (17)

2017

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Current conduction mechanism and electrical break-down in InN grown on GaN

Applied physics letters, 2017-06, Vol.110 (23)

2017

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Modeling current transport in boron-doped diamond at high electric fields including self-heating effect

Diamond and related materials, 2020-11, Vol.109, p.108003, Article 108003

2020

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Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

Applied physics letters, 2014-03, Vol.104 (11)

2014

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Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

Journal of applied physics, 2009-12, Vol.106 (12), p.124503-124503-7

2009

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TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs

Microelectronics and reliability, 2017-09, Vol.76-77, p.698-702

2017

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InAlN/GaN HEMTs: a first insight into technological optimization

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.422-426

2006

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Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1698-1705

2005

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MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

Semiconductor science and technology, 2007-12, Vol.22, p.1272

2007

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Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates

Thin solid films, 2012-07, Vol.520 (19), p.6230-6232

2012

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A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-6

2023

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Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes

Journal of applied physics, 2005-06, Vol.97 (12), p.123714-123714-7

2005

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Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Semiconductor science and technology, 2009-03, Vol.24 (3), p.035008-035008 (5)

2009

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Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

Journal of applied physics, 2011-04, Vol.109 (8), p.086106-086106-3

2011

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Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors

Applied physics letters, 2007-07, Vol.91 (4)

2007

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Thermal analysis of submicron nanocrystalline diamond films

Diamond and related materials, 2013-11, Vol.40, p.69-74

2013

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Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods

Journal of applied physics, 2007-03, Vol.101 (5), p.054508-054508-6

2007

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Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Review of bias-temperature instabilities at the III-N/dielectric interface

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices

Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors

Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

Low-frequency noise characterization of single CuO nanowire gas sensor devices

Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires

Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs

Current conduction mechanism and electrical break-down in InN grown on GaN

Modeling current transport in boron-doped diamond at high electric fields including self-heating effect

Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs

InAlN/GaN HEMTs: a first insight into technological optimization

Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon

MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates

A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests

Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes

Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors

Thermal analysis of submicron nanocrystalline diamond films

Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods

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