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Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

Applied physics letters, 2016-12, Vol.109 (25)

2016

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Single artificial atoms in silicon emitting at telecom wavelengths

Nature electronics, 2020-12, Vol.3 (12), p.738-743

2020

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Point defect engineering strategies to suppress A-center formation in silicon

Applied physics letters, 2011-12, Vol.99 (24), p.241901-241901-3

2011

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Charge transfers and charged defects in WSe2/graphene-SiC interfaces

Nanotechnology, 2020-04, Vol.31 (25), p.255709-255709

2020

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High graphene permeability for room temperature silicon deposition: The role of defects

Carbon (New York), 2020-03, Vol.158, p.631-641

2020

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Modelling of point defect complex formation and its application to H+ ion implanted silicon

Acta materialia, 2015-10, Vol.99, p.187-195

2015

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Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon

Journal of applied physics, 2012-06, Vol.111 (12)

2012

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Modeling of aging in plutonium by molecular dynamics

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-04, Vol.202 (Complete), p.82-87

Pochet, P.

2003

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Towards sustainable mobility indicators: application to the Lyons conurbation

Transport policy, 2003, Vol.10 (3), p.197-208

2003

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Lead incorporation mechanism in LiF crystals

Applied physics letters, 2013-02, Vol.102 (8)

2013

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Nitrogen segregation in nanocarbons

Faraday discussions, 2014-01, Vol.173, p.215-232

2014

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Nitrogen implantation of suspended graphene flakes: Annealing effects and selectivity of sp2 nitrogen species

Carbon (New York), 2014-07, Vol.73, p.371-381

2014

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Atomic structure of Mn-rich nanocolumns probed by x-ray absorption spectroscopy

Applied physics letters, 2008-06, Vol.92 (24)

2008

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Evidence of the Ge nonreactivity during the initial stage of SiGe oxidation

Applied physics letters, 2009-01, Vol.94 (4), p.041912-041912-3

2009

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Stability of Frenkel pairs in Si(1 0 0) surface in the presence of germanium and oxygen atoms

Microelectronic engineering, 2011-04, Vol.88 (4), p.503-505

2011

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First-principles study of near surface point defects stability in Si (100) and SiGe(100)

Thin solid films, 2010-02, Vol.518 (9), p.2418-2421

2010

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Simulation of the enhanced Curie temperature in Mn5Ge3Cx compounds

Applied physics letters, 2009-05, Vol.94 (19)

2009

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Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance

Applied physics letters, 2017-01, Vol.110 (1)

2017

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High graphene permeability for silicon atoms during deposition at room temperature: the role of defects

Carbon (New York), 2020-03, Vol.158, p.631-641

2020

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Charge transfers and charged defects in WSe 2 /graphene-SiC interfaces

Nanotechnology, 2020-04, Vol.31 (25), p.255709

2020

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Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si

Journal of applied physics, 2013-03, Vol.113 (11)

2013

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Impact of isovalent doping on radiation defects in silicon

Journal of applied physics, 2013-09, Vol.114 (11)

2013

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An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon

Journal of applied physics, 2015-09, Vol.118 (12)

2015

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Millimeter-scale layered MoSe 2 grown on sapphire and evidence for negative magnetoresistance

Applied physics letters, 2017, Vol.110 (1)

2017

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Unveiling the atomic position of C in Mn5Ge3Cx thin films

Physical review materials, 2022-07, Vol.6 (7)

2022

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Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

Single artificial atoms in silicon emitting at telecom wavelengths

Point defect engineering strategies to suppress A-center formation in silicon

Charge transfers and charged defects in WSe2/graphene-SiC interfaces

High graphene permeability for room temperature silicon deposition: The role of defects

Modelling of point defect complex formation and its application to H+ ion implanted silicon

Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon

Modeling of aging in plutonium by molecular dynamics

Towards sustainable mobility indicators: application to the Lyons conurbation

Lead incorporation mechanism in LiF crystals

Nitrogen segregation in nanocarbons

Nitrogen implantation of suspended graphene flakes: Annealing effects and selectivity of sp2 nitrogen species

Atomic structure of Mn-rich nanocolumns probed by x-ray absorption spectroscopy

Evidence of the Ge nonreactivity during the initial stage of SiGe oxidation

Stability of Frenkel pairs in Si(1 0 0) surface in the presence of germanium and oxygen atoms

First-principles study of near surface point defects stability in Si (100) and SiGe(100)

Simulation of the enhanced Curie temperature in Mn5Ge3Cx compounds

Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance

High graphene permeability for silicon atoms during deposition at room temperature: the role of defects

Charge transfers and charged defects in WSe 2 /graphene-SiC interfaces

Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si

Impact of isovalent doping on radiation defects in silicon

An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon

Millimeter-scale layered MoSe 2 grown on sapphire and evidence for negative magnetoresistance

Unveiling the atomic position of C in Mn5Ge3Cx thin films

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