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Quantification of Secondary Electron Doping Contrast in the Scanning Electron Microscope on 4H-SiC

Materials science forum, 2023-05, Vol.1089, p.23-29

2023

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Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation

IEEE electron device letters, 2013-08, Vol.34 (8), p.939-941

2013

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On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs

Applied physics letters, 2019-10, Vol.115 (15)

2019

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Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (44), p.1279-1285

2018

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Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress

Materials Science Forum, 2016-05, Vol.858, p.481-484

2016

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Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs

IEEE electron device letters, 2013-09, Vol.34 (9), p.1112-1114

2013

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Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

Microelectronics and reliability, 2018-01, Vol.80, p.68-78

2018

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Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps

Materials science forum, 2013-01, Vol.740-742, p.757-760

2013

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An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors

Communications physics, 2019-01, Vol.2 (1), Article 5

2019

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Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs

Materials science forum, 2015-06, Vol.821-823, p.709-712

2015

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Instabilities of SiC MOSFETs during use conditions and following bias temperature stress

2015 IEEE International Reliability Physics Symposium, 2015, p.6C.6.1-6C.6.6

2015

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Effects of nitridation on SiC/SiO2 structures studied by hard X-ray photoelectron spectroscopy

JPhys Energy, 2020-07, Vol.2 (3)

2020

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Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1804-1809

2021

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Effect of Carbon Doping on Charging/Discharging Dynamics and Leakage Behavior of Carbon-Doped GaN

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5314-5321

2018

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Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4092-4098

2020

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Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1419-1426

2018

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Emission of Trapped Electrons from the 4H-SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2024-08, Vol.434, p.61-66

2024

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Applicability of Shockley-Read-Hall Theory for Interface States

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.2092-2097

2021

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The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers

Applied physics letters, 2017-07, Vol.111 (3)

2017

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On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2148-2155

2013

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NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4692-4697, Article 4692

2019

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Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3087-3093

2022

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Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs

Materials science forum, 2020-07, Vol.1004, p.652-658

2020

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Conduction mechanisms in hydrogenated amorphous silicon carbide

Journal of non-crystalline solids, 2020-01, Vol.528, p.119750, Article 119750

2020

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Evidence‐Based Understanding of Lateral Hole Transport During OFF‐State Stress Completing Dynamic GaN‐on‐Si Buffer Charging Model

Physica status solidi. A, Applications and materials science, 2024-05

2024

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Quantification of Secondary Electron Doping Contrast in the Scanning Electron Microscope on 4H-SiC

Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation

On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs

Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres

Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress

Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps

An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors

Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs

Instabilities of SiC MOSFETs during use conditions and following bias temperature stress

Effects of nitridation on SiC/SiO2 structures studied by hard X-ray photoelectron spectroscopy

Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs

Effect of Carbon Doping on Charging/Discharging Dynamics and Leakage Behavior of Carbon-Doped GaN

Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping

Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique

Emission of Trapped Electrons from the 4H-SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures

Applicability of Shockley-Read-Hall Theory for Interface States

The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers

On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale

NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability

Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants

Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs

Conduction mechanisms in hydrogenated amorphous silicon carbide

Evidence‐Based Understanding of Lateral Hole Transport During OFF‐State Stress Completing Dynamic GaN‐on‐Si Buffer Charging Model

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