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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Journal of applied physics, 1997-05, Vol.81 (9), p.6031-6050

1997

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Implantation and transient B diffusion in Si: The source of the interstitials

Applied physics letters, 1994-10, Vol.65 (18), p.2305-2307

1994

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Ion beams in silicon processing and characterization

Journal of applied physics, 1997-05, Vol.81 (10), p.6513-6561

1997

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B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Applied physics letters, 1997-04, Vol.70 (17), p.2285-2287

1997

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Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diode

Applied physics letters, 1994-05, Vol.64 (21), p.2842-2844

1994

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Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

Applied physics letters, 1996-01, Vol.68 (3), p.409-411

1996

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Evolution from point to extended defects in ion implanted silicon

Journal of applied physics, 1997-07, Vol.82 (1), p.120-125

1997

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Density of amorphous Si

Applied physics letters, 1994-01, Vol.64 (4), p.437-439

1994

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Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion

Applied physics letters, 1995-03, Vol.66 (11), p.1370-1372

1995

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Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon

Journal of applied physics, 1991-09, Vol.70 (5), p.2672-2678

1991

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On the FinFET extension implant energy

IEEE transactions on nanotechnology, 2003-12, Vol.2 (4), p.285-290

2003

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Ion beam technologies in the semiconductor world (plenary)

Review of Scientific Instruments, 2002-02, Vol.73 (2), p.868-872

2002

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Controlled atomic spontaneous emission from Er3+ in a transparent Si/SiO2 microcavity

Physical review letters, 1993-07, Vol.71 (4), p.517-520

1993

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The interstitial fraction of diffusivity of common dopants in Si

Applied physics letters, 1997-12, Vol.71 (26), p.3862-3864

1997

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Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

Applied physics letters, 1996-09, Vol.69 (10), p.1376-1378

1996

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Trap-limited interstitial diffusion and enhanced boron clustering in silicon

Applied physics letters, 1995-01, Vol.66 (5), p.568-570

1995

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Interstitial defects in silicon from 1–5 keV Si+ ion implantation

Applied physics letters, 1997-06, Vol.70 (25), p.3332-3334

1997

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Iron gettering mechanisms in silicon

Journal of applied physics, 1996-09, Vol.80 (6), p.3275-3284

1996

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Transient enhanced diffusion of Sb and B due to MeV silicon implants

Applied physics letters, 1997-06, Vol.70 (24), p.3281-3283

1997

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The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon

Journal of applied physics, 1999-08, Vol.86 (3), p.1221-1225

1999

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Implantation and transient boron diffusion: the role of the silicon self-interstitial

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-03, Vol.96 (1), p.187-195

1995

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The precipitation of Fe at the Si–SiO2 interface

Journal of applied physics, 1998-01, Vol.83 (1), p.580-584

1998

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The electrical and defect properties of erbium-implanted silicon

Journal of applied physics, 1991-09, Vol.70 (5), p.2667-2671

1991

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Microstructure of erbium-implanted Si

Applied physics letters, 1991-06, Vol.58 (24), p.2797-2799

1991

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Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

Journal of applied physics, 1985-01, Vol.57 (6), p.1795-1804

1985

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Implantation and transient B diffusion in Si: The source of the interstitials

Ion beams in silicon processing and characterization

B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diode

Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

Evolution from point to extended defects in ion implanted silicon

Density of amorphous Si

Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion

Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon

On the FinFET extension implant energy

Ion beam technologies in the semiconductor world (plenary)

Controlled atomic spontaneous emission from Er3+ in a transparent Si/SiO2 microcavity

The interstitial fraction of diffusivity of common dopants in Si

Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

Trap-limited interstitial diffusion and enhanced boron clustering in silicon

Interstitial defects in silicon from 1–5 keV Si+ ion implantation

Iron gettering mechanisms in silicon

Transient enhanced diffusion of Sb and B due to MeV silicon implants

The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon

Implantation and transient boron diffusion: the role of the silicon self-interstitial

The precipitation of Fe at the Si–SiO2 interface

The electrical and defect properties of erbium-implanted silicon

Microstructure of erbium-implanted Si

Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

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